Interfacial tunneling oxide: Impact on electrical characterization of unipolar Si/Si bonded junctionsSTUCHINSKY, V. A.Proceedings - Electrochemical Society. 2003, pp 195-202, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Advanced SOI structures based on wafer bonding: A short reviewGHYSELEN, B.Proceedings - Electrochemical Society. 2003, pp 96-109, issn 0161-6374, isbn 1-56677-402-0, 14 p.Conference Paper

Interferometric optical isolator with Si gudiing layer operated in unidirectional magnetic fieldYOKOI, Hideki.Proceedings - Electrochemical Society. 2005, pp 450-457, issn 0161-6374, isbn 1-56677-460-8, 8 p.Conference Paper

Evaluation of commercial ultra-thin SOI substrates using laser confocal inspection systemOGURA, Atsushl; OKABAYASHI, Osamu.Proceedings - Electrochemical Society. 2003, pp 19-24, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Semiconductor wafer bonding VIII : science, technology, and applications (Quebec PQ, 15-20 May 2005)Hobart, K.D; Bengtsson, S; Baumgart, H et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-460-8, X, 462 p, isbn 1-56677-460-8Conference Proceedings

High performance SOI device optionsHUANG, Shih-Fen.Proceedings - Electrochemical Society. 2005, pp 1-8, issn 0161-6374, isbn 1-56677-460-8, 8 p.Conference Paper

Influence of a ductile interlayer on the toughness of hydrophilic wafer bondingBERTHOLET, Y; RADN, J. P; PARDOEN, T et al.Proceedings - Electrochemical Society. 2005, pp 264-269, issn 0161-6374, isbn 1-56677-460-8, 6 p.Conference Paper

Wafer scale packaging of mems by using plasma activated wafer bondingSUNI, T; HENTTINEN, K; LIPSANEN, A et al.Proceedings - Electrochemical Society. 2005, pp 173-183, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Characterization of bonded interface by HF etching methodSUNI, T; KIIHAMAKI, J; HENTTINEN, K et al.Proceedings - Electrochemical Society. 2003, pp 70-75, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Improved characterization methods for unipolar directly bonded semiconductor junctionsSTUCHINSKY, V. A; KAMAEV, G. N.Proceedings - Electrochemical Society. 2003, pp 203-211, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Interest of a short plasma treatment to achieve SI-SIO₂-SI bonded structuresMORICEAU, H; BATAILLOU, B; MORALES, C et al.Proceedings - Electrochemical Society. 2003, pp 110-117, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Silicon wafer bonding for encapsulating surface-micromechanical-systems using intermediate glass layersKNECHTEL, Roy; HELLER, Jutta; WIEMER, Mike et al.Proceedings - Electrochemical Society. 2003, pp 321-328, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Wafer-scale surface activated bonding of Cu-Cu, Cu-Si, and Cu-SiO₂ at low temperatureKIM, T. H; HOWLADER, M. M. R; ITOH, T et al.Proceedings - Electrochemical Society. 2003, pp 239-247, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Activation process and bonding mechanism of Si/ LiNbO₃ and LiNbO₃/LiNbO₃ at room temperatureHOWLADER, Matiar R; SUGA, Tadatomo; KIM, Moon J et al.Proceedings - Electrochemical Society. 2005, pp 319-325, issn 0161-6374, isbn 1-56677-460-8, 7 p.Conference Paper

Low- and high-temperature silicon wafer direct bonding for micromachined absolute pressure sensorsKNECHTEL, Roy; DAHLMANN, Gerald; SCHWARZ, Uwe et al.Proceedings - Electrochemical Society. 2005, pp 205-215, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

Electrical properties of low-temperature bonded unipolar Si/Si junctionsNAFCHI, B. Raeissi; AMIRFEIZ, P; ENGSTROM, O et al.Proceedings - Electrochemical Society. 2005, pp 355-366, issn 0161-6374, isbn 1-56677-460-8, 12 p.Conference Paper

Bonding and contacting of MEMS-structures on wafer levelWIEMER, M; FRÖMEL, J; JIA, C et al.Proceedings - Electrochemical Society. 2003, pp 301-308, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Role of wafer bow and etch patterns in direct wafer bondingTURNERY, K. T; SPEARING, S. M.Proceedings - Electrochemical Society. 2003, pp 166-174, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

The bonding energy control: An original way to debondable substratesMORICEAU, H; RAYSSAC, O; ASPAR, B et al.Proceedings - Electrochemical Society. 2003, pp 49-56, issn 0161-6374, isbn 1-56677-402-0, 8 p.Conference Paper

Wafer bonding using indium tin oxide intermediate layer for high brightness ledsPO CHUN LIU; CHIH YUAN HOU; YEWCHUNG SERMON WU et al.Proceedings - Electrochemical Society. 2003, pp 175-183, issn 0161-6374, isbn 1-56677-402-0, 9 p.Conference Paper

Applications of bonding SOI technology to high performance LSI circuitsYOSHIMI, Makoto; LETERTRE, Fabrice; CAYREFOURCQ, Ian et al.Proceedings - Electrochemical Society. 2005, pp 9-19, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper

In-line critical leak rate testing of vacuum-sealed and backfilled resonating MEMS devicesRELNERT, Wolfgang; KÄHLER, Dirk; OLDSEN, Marten et al.Proceedings - Electrochemical Society. 2005, pp 233-240, issn 0161-6374, isbn 1-56677-460-8, 8 p.Conference Paper

Mechanics aspects of wafer bondingTURNER, K. T; SPEARING, S. M.Proceedings - Electrochemical Society. 2005, pp 241-252, issn 0161-6374, isbn 1-56677-460-8, 12 p.Conference Paper

Direct bonding of thick film polysilicon to glass substratesLUOTO, H; SUNI, T; HENTTINEN, K et al.Proceedings - Electrochemical Society. 2005, pp 194-204, issn 0161-6374, isbn 1-56677-460-8, 11 p.Conference Paper