VACANCY FORMATION ENTHALPIES IN A^IB^IIIC₂^VI CHALCOPYRITE SEMICONDUCTORSNEUMANN H.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 7; PP. 901-906; ABS. GER; BIBL. 21 REF.Article

SOME STRUCTURAL CORRELATIONS IN CHALCOPYRITE CRYSTALSBHAR GC; SAMANTA LK.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 4; PP. 2275-2279; BIBL. 12 REF.Article

CRYSTAL GROWTH AND APPLICATION OF CHALCOPYRITE SEMICONDUCTOR MATERIALSPAORICI C; ZANOTTI L.1980; MATER. CHEM.; ISSN 0390-6035; ITA; DA. 1980; VOL. 5; NO 6; PP. 337-351; BIBL. 56 REF.Article

Growth of CulnS₂ single crystals by THMHSU, H. J; SUN, C. Y; HWANG, H. L et al.Electronics Letters. 1984, Vol 20, Num 9, issn 0013-5194, 376Article

Anion displacements and the band-gap anomaly in ternary ABC₂ chalcopyrite semiconductorsJAFFE, J. E; ZUNGER, A.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5176-5179, issn 0163-1829Article

X-ray spectroscopic study of some ternary compounds of the type A^IB^IIIC₂^VI and A^IB^VC₂^VIDESHPANDE, A. P; SAPRE, V. B; MANDE, C et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 5, pp 955-960, issn 0022-3719Article

SIMPLE THEORETICAL ESTIMATE OF SURFACE ENERGY, BULK MODULUS, AND ATOMIZATION ENERGY OF A^IB^IIIC₂^VI COMPOUNDSNEUMANN H.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 5; PP. 665-670; ABS. GER; BIBL. 20 REF.Article

MEASUREMENT OF LATTICE PARAMETERS OF A^IB^IIIC^VI₂ CHALCOPYRITE-TYPE EPITAXIAL LAYERS USING REFLECTION HIGH ENERGY ELECTRON DIFFRACTIONTEMPEL A; SCHUMANN B.1979; THIN SOLID FILMS; NLD; DA. 1979; VOL. 59; NO 1; PP. 99-104; BIBL. 6 REF.Article

A TEMPERATURE VARIATION METHOD FOR THE GROWTH OF CHALCOPYRITE CRYSTALS BY IODINE VAPOUR TRANSFERT.PAORICI C; ZANOTTI L; ZUCCALLI G et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 6; PP. 705-710; BIBL. 6 REF.Article

CROISSANCE DES CRISTAUX DE COMPOSES TERNAIRES DU TYPE A^IB^IIIC₂^V ET PROPRIETESBODNAR IV; LUKOMSKIJ AI.1979; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1979; VOL. 15; NO 10; PP. 1718-1721; BIBL. 8 REF.Article

TEMPERATURE DEPENDENCE OF THE TETRAGONAL DISTORTION IN I-III-VI₂ COMPOUNDSNEUMANN H.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 5; PP. 659-664; ABS. GER; BIBL. 12 REF.Article

The influence of the thermal behaviour of AgGaS₂ on the crystal growth processWEISE, S; SALK, M; KRÄMER, V et al.Journal of thermal analysis and calorimetry. 1998, Vol 52, Num 1, pp 17-20, issn 1388-6150Article

Preparation and properties of CuInSe₂ thin produced by selenization of co-sputtered Cu-In filmsSCHMIDT, J; ROSCHER, H. H; LABUSCH, R et al.Thin solid films. 1994, Vol 251, Num 2, pp 116-120, issn 0040-6090Article

Anomalous composition and temperature dependence of the energy gap of AgGa_1-xIn_xSe₂ mixed crystalsSUK-RYONG HAHN; WHA-TEK KIM.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5129-5131, issn 0163-1829Article

On the dielectric constants of A^IB^IIIC₂^VI chalcopyrite semiconductor compoundsMARQUEZ, R; RINCON, C.Physica status solidi. B. Basic research. 1995, Vol 191, Num 1, pp 115-119, issn 0370-1972Article

Bulk modulus of ternary chalcopyrite semiconductorsKUMAR, V; PRASAD, G. M; CHANDRA, D et al.Physica status solidi. B. Basic research. 1994, Vol 186, Num 2, pp K45-K48, issn 0370-1972Article

Thermal expansion anisotropy and individual bond expansion coefficients in ternary chalcopyrite compoundsNEUMANN, H.Crystal research and technology (1979). 1987, Vol 22, Num 5, pp 723-729, issn 0232-1300Article

Pseudopotential orbital radii and tetragonal distortions in ternary and quaternary chalcopyrite compoundsSHAUKAT, A; HUSSAIN, K.The Journal of physics and chemistry of solids. 1985, Vol 46, Num 1, pp 61-65, issn 0022-3697Article

ADAMANTINE TERNARY EPITAXIAL LAYERSNEUMANN H; KUHN G; SCHUMANN B et al.1980; PROG. CRYST. GROWTH CHARACT.; ISSN 501948; GBR; DA. 1980; VOL. 3; NO 2-3; PP. 157-178; BIBL. 134 REF.Article

ZUR HETEROEPITAXIE VON A^IB^IIIC₂^VI-VERBINDUNGEN. INTERPRETATION VON RHEED-DIAGRAMMEN. = HETEROEPITAXIE DES COMPOSES A^IB^IIIC₂^VI. INTERPRETATION DES DIAGRAMMES RHEEDTEMPEL A; SCHUMANN B.1978; KRISTALL U. TECH.; DDR; DA. 1978; VOL. 13; NO 4; PP. 389-394; ABS. ENG; BIBL. 5 REF.Article

Variation of the energy gap with composition in A^IB^IIIC₂^VI chalcopyrite-structure alloysTINOCO, T; QUINTERO, M; RINCON, C et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 4, pp 1613-1615, issn 0163-1829Article

Contribution à l'étude des défauts de réseau dans les composés I-III-VI₂ = Astudy of lattice defects in I-III-VI₂ compoundsRADJAI, Esfandiar.1985, 146 fThesis

Force constant scaling and interatomic potential in tetrahedral semiconductorsNEUMANN, H.Crystal research and technology (1979). 1989, Vol 24, Num 3, pp 325-329, issn 0232-1300Article

Epitaxy of A^IB^IIIC₂^VI semiconductorsSCHUMANN, B; TEMPEL, A; KÜHN, G et al.Crystal research and technology (1979). 1988, Vol 23, Num 1, pp 3-16, issn 0232-1300Article

Composition-dependent band gap variation of mixed chalcopyritesSHAUKAT, A.The Journal of physics and chemistry of solids. 1990, Vol 51, Num 12, pp 1413-1418, issn 0022-3697, 6 p.Article