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ICFSI-5 : International Conference on the Formation of Semiconductor InterfacesKAHN, A; LUDEKE, R.Applied surface science. 1996, Vol 104-05, issn 0169-4332, 730 p.Conference Proceedings

Analytical studies of nickel silicide formation through a thin Ti layerFENSKE, F; SCHÖPKE, A; SCHULZE, S et al.Applied surface science. 1996, Vol 104-05, pp 218-222, issn 0169-4332Conference Paper

Clustering on surfaces at finite areal coveragesBAREL, R; MAI, Y; CARLOW, G. R et al.Applied surface science. 1996, Vol 104-05, pp 669-678, issn 0169-4332Conference Paper

Porous silicon layers as a model system for nanostructuresROSSOW, U; FROTSCHER, U; PIETRYGA, C et al.Applied surface science. 1996, Vol 104-05, pp 552-556, issn 0169-4332Conference Paper

Surface core-level shift photoelectron diffraction from As/Si(111)JOHANSSON, L. S. O; GUNNELLA, R; BULLOCK, E. L et al.Applied surface science. 1996, Vol 104-05, pp 88-94, issn 0169-4332Conference Paper

Characterization of nitrided SiO2 thin films using secondary ion mass spectrometryFROST, M. R; MAGEE, C. W.Applied surface science. 1996, Vol 104-05, pp 379-384, issn 0169-4332Conference Paper

Growth and characterization of ZnSe/GaAs single quantum well structuresHOUSE, J. L; DOUGHERTY, D. J; PETRICH, G. S et al.Applied surface science. 1996, Vol 104-05, pp 472-478, issn 0169-4332Conference Paper

Preparation and properties of thin polycrystalline MnSi1.73filmsTEICHERT, S; KILPER, R; ERBEN, J et al.Applied surface science. 1996, Vol 104-05, pp 679-684, issn 0169-4332Conference Paper

Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopyPFISTER, M; JOHNSON, M. B; ALVARADO, S. F et al.Applied surface science. 1996, Vol 104-05, pp 516-521, issn 0169-4332Conference Paper

Valence band of Dd1-xFexSe/Fe in resonant photoemission spectraORLOWSKI, B. A; KOWALSKI, B. J; BARRETT, N et al.Applied surface science. 1996, Vol 104-05, pp 282-285, issn 0169-4332Conference Paper

Atomic force microscopy of III-V nanostructures in airREINHARDT, F; DWIR, B; BIASIOL, G et al.Applied surface science. 1996, Vol 104-05, pp 529-538, issn 0169-4332Conference Paper

Band structure evolution in InAs overlayers on GaAs(110)HE, Z. Q; ILIVER, L; KANSKI, J et al.Applied surface science. 1996, Vol 104-05, pp 608-614, issn 0169-4332Conference Paper

Characterization of nanostructures by virtue of the phenomena due to the electron-phonon interactionPOKATILOV, E. P; FOMIN, V. M; KLIMIN, S. N et al.Applied surface science. 1996, Vol 104-05, pp 546-551, issn 0169-4332Conference Paper

Chemical preparation of CdTe(100) and (110) surfaces using atomic hydrogenLUO, Y; SLATER, D. A; LEVY, M et al.Applied surface science. 1996, Vol 104-05, pp 49-56, issn 0169-4332Conference Paper

Graphitization of diamond (111) studied by first principles molecular dynamicsDE VITA, A; GALLI, G; CANNING, A et al.Applied surface science. 1996, Vol 104-05, pp 297-303, issn 0169-4332Conference Paper

In-situ monitoring of surface chemistry and charge transfer at semiconductor surfacesFEFER, E; KRONIK, L; LEIBOVITCH, M et al.Applied surface science. 1996, Vol 104-05, pp 61-67, issn 0169-4332Conference Paper

Metal overlayers on the MBE-grown ZnSe(001) surfaceEVANS, D. A; WOLFFRAMM, D; GNOTH, D et al.Applied surface science. 1996, Vol 104-05, pp 240-247, issn 0169-4332Conference Paper

Optical study of potassium growth on the Si(100) surfaceROY, M; BORENSZTEIN, Y.Applied surface science. 1996, Vol 104-05, pp 147-151, issn 0169-4332Conference Paper

Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayersSAUVAGE-SIMKIN, M; GARREAU, Y; PINCHAUX, R et al.Applied surface science. 1996, Vol 104-05, pp 646-651, issn 0169-4332Conference Paper

Structural transformations at CaF2/Si(111) interfacesSOKOLOV, N. S; ALVAREZ, J. C; SHUSTERMAN, YU. V et al.Applied surface science. 1996, Vol 104-05, pp 402-408, issn 0169-4332Conference Paper

Weak fluence dependence of charge generation in ultra-thin oxides on siliconFARMER, K. R; DEBAUCHE, C. P; GIORDANO, A. R et al.Applied surface science. 1996, Vol 104-05, pp 369-372, issn 0169-4332Conference Paper

AFM and RHEED study of Ge islanding on Si(111) and Si(100)DEELMAN, P. W; THUNDAT, T; SCHOWALTER, L. J et al.Applied surface science. 1996, Vol 104-05, pp 510-515, issn 0169-4332Conference Paper

Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbideKÄCKELL, P; FURTHMÜLLER, J; BECHSTEDT, F et al.Applied surface science. 1996, Vol 104-05, pp 45-48, issn 0169-4332Conference Paper

An ARUPS/NEXAFS study of the H2S /InP(110) adsorbate systemDUDZIK, E; LESLIE, A; O'TOOLE, E et al.Applied surface science. 1996, Vol 104-05, pp 101-106, issn 0169-4332Conference Paper

Characterization of cobalt-diamond (100) interfaces : electron affinity and Schottky barrierBAUMANN, P. K; NEMANICH, R. J.Applied surface science. 1996, Vol 104-05, pp 267-273, issn 0169-4332Conference Paper

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