Analysis of waveguide properties of organic semiconductor lasersBARLOW, G. F; SHORE, K. A.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 1, pp 15-20, issn 1350-2433Article

Angular and spectral filtering in tilted-grating structuresBOUCHER, Y; FESSANT, T; USKOV, A. V et al.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 1, pp 35-38, issn 1350-2433Article

High average power short-pulse generation from singlemode InGaAs/GaAs laser diodesRAFAILOV, E. U; BIRKIN, D. J. L; AVRUTIN, E. A et al.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 1, pp 51-54, issn 1350-2433Article

Optically connected parallel machine : Design, performance and applicationWHITE, H. J; BARRETT, C. P; PROUDLEY, G. M et al.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 3, pp 125-136, issn 1350-2433Article

Primary referenced DWDM frequency comb generatorLEPLEY, J. J; SIDDIQUI, A. S.IEE proceedings. Optoelectronics. 1999, Vol 146, Num 3, pp 121-124, issn 1350-2433Article

Dispersion in chiral optical fibresQIU, R. C; LU, I.-T.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 3, pp 155-158, issn 1350-2433Article

Intensity and frequency noise transmission along singlemode fibre at zero-dispersion wavelengthCARTAXO, A. V. T; MORGADO, J. A. P.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 4, pp 211-216, issn 1350-2433Article

Numerical analysis of Yb³⁺-sensitised, Er³⁺-doped, fibre-ring laserKARASEK, M; KANKA, J.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 2, pp 133-137, issn 1350-2433Article

Polariser based on a PbSe-clad optical waveguide in the infrared wavelength : The role of a buffer layerCHAKRAVARTY, G. R; PRIYE, V; PAL, B. P et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 4, pp 223-226, issn 1350-2433Article

Semiconductor laser sources for the generation of millimetre-wave signalsRAZAVI, K. E; DAVIES, P. A.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 3, pp 159-163, issn 1350-2433Article

Design of externally tuned asymmetric fibre Fabry-Perot electroabsorption optical modulatorsXU, M. G; NENER, B. D; DELL, J. M et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 6, pp 344-352, issn 1350-2433Article

Interleaving two-dimensional lattices to create three-dimensional photonic bandgap structures : Photonic crystals and microstructuresREYNOLDS, A. L; ARNOLD, J. M.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 6, pp 436-440, issn 1350-2433Article

Light power behaviour when bending plastic optical fibresARRUE, J; ZUBIA, J; FUSTER, G et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 6, pp 313-318, issn 1350-2433Article

Effect of GaSb growth temperature on p-GaSb/n-GaAs diodes grown by MOVPEHAYWOOD, S. K; SCOTT, C. G; SWEILEH, G. M et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 5, pp 287-291, issn 1350-2433Conference Paper

Spontaneous emission in semiconductor microcavity post lasersBAVA, G. P; DEBERNARDI, P.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 1, pp 37-42, issn 1350-2433Article

Semiconductor optoelectronicsMIRASSO, Claudio R.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 1, issn 1350-2433, 92 p.Serial Issue

Rapid slider LPE growth of InAs quantum wellsKRIER, A; LABADI, Z; RICHARDSON, J et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 5, pp 297-301, issn 1350-2433Conference Paper

Type II W, interband cascade and vertical-cavity surface-emitting mid-IR lasersMEYER, J. R; OLAFSEN, L. J; PEI, S. S et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 5, pp 275-280, issn 1350-2433Conference Paper

Channel waveguides formed by ion implantation of PECVD grown silicaLEECH, P. W; FAITH, M. F; JOHNSON, C. M et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 2, pp 97-100, issn 1350-2433Article

Lossless operation of 4 x 4 laser diode optical gate switches using Y reflection type branching/combining circuits for large-scale integrationOKU, S; SHIBATA, Y; TAKESHITA, T et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 2, pp 61-68, issn 1350-2433Article

Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAs_1-xSb_x strained layer superlattices at 300 KCIESLA, C. M; MURDIN, B. N; PULLIN, M. J et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 331-335, issn 1350-2433Article

Auger recombination in strained quantum well InAlAsSb/GaSb structures for 3-4 μm lasersANDREEV, A. D; ZEGRYA, G. G.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 336-342, issn 1350-2433Article

Spiral fibre microbend sensorsYOSHINO, T; INOUE, K; KOBAYASHI, Y et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 3, pp 145-150, issn 1350-2433Article

Computationally efficient analysis of buried waveguides with applications to semiconductor lasersSEWELL, P; REED, M; BENSON, T. M et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 1, pp 14-18, issn 1350-2433Conference Paper

Approximate solution to the envelope of a pulse propagating in a nonlinear optical fibreAHMAD, F; RAZZAGHI, M.IEE proceedings. Optoelectronics. 1996, Vol 143, Num 3, pp 200-204, issn 1350-2433Article