2004 international conference on indium phosphide and related materials (16th IPRM, conference proceedings)International Conference on Indium Phosphide and Related Materials. 2004, isbn 0-7803-8595-0, 1Vol, XIV-778 p, isbn 0-7803-8595-0Conference Proceedings

Gallium nitride materials and devices II (22-25 January 2007, San Jose, California, USA)Morkoç, Hadis; Litton, Cole W.Proceedings of SPIE, the International Society for Optical Engineering. 2007, issn 0277-786X, isbn 978-0-8194-6586-3, 1Vol, various pagings, isbn 978-0-8194-6586-3Conference Proceedings

Internal strain and photoelastic effects in Ga_1-xAl_xAs/GaAs and In_1-xGa_xAsyP_1-yADACHI, S; OE, K.Journal of applied physics. 1983, Vol 54, Num 11, pp 6620-6627, issn 0021-8979Article

GaInAs/AlGaInAs DH and MQW lasers with 1.5-1.7 μm lasing wavelengths grown by atmospheric pressure MOVPEGESSNER, R; DRUMINSKI, M; BESCHORNER, M et al.Electronics Letters. 1989, Vol 25, Num 8, pp 516-517, issn 0013-5194, 2 p.Article

Impact ionization rates in an In Ga As/In Al As superlatticeKAGAWA, T; KAWAMURA, Y; ASAI, H et al.Applied physics letters. 1989, Vol 55, Num 10, pp 993-995, issn 0003-6951, 3 p.Article

Monte Carlo study of the influence of collector region velocity overshoot on the high-frequency performance of AlGaAs/GaAs heterojunction bipolar transistorsROCKETT, P. I.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1573-1579, issn 0018-9383Article

The fabrication of sub-micron width mesas in GaAs/Ga_1-xAl_xAs heterojunction materialHUTCHINGS, K. M; GRASSIE, A. D. C; LAKRIMI, M et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1057-1059, issn 0268-1242Article

Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)Chyi, Jen-Inn.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939, issn 0277-786X, isbn 978-0-8194-8476-5, 1 vol, isbn 978-0-8194-8476-5Conference Proceedings

Structural and electrical investigation of high temperature Fe implanted gainp layers lattice matched to GaAsCESCA, T; GASPAROTTO, A; VEMA, A et al.International Conference on Indium Phosphide and Related Materials. 2004, pp 276-277, isbn 0-7803-8595-0, 1Vol, 2 p.Conference Paper

Effective-mass superlatticeSASAKI, A.Physical review. B, Condensed matter. 1984, Vol 30, Num 12, pp 7016-7020, issn 0163-1829Article

On the possibility of intrinsic negative differential resistance in III-V quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 22, pp L789-L790, issn 0022-3719Article

Mechanisms of III-V light-emitting diode bulk degradationTORCHINSKAYA, T. V.SPIE proceedings series. 1998, pp 200-202, isbn 0-8194-2756-X, 2VolConference Paper

Single-stage calculation of the total energy of compositionally modulated III-V alloysGLAS, F.Journal of applied physics. 1989, Vol 66, Num 4, pp 1667-1670, issn 0021-8979, 4 p.Article

Monte Carlo particle investigation of noise in short n⁺-n-n⁺ GaAs diodesJUNEVICIUS, D; REKLAITIS, A.Electronics Letters. 1988, Vol 24, Num 21, pp 1307-1308, issn 0013-5194Article

Computer simulation experiment on the mm-wave properties of indium phosphide double drift impattsBANERJEE, J. P; PATI, S. P; ROY, S. K et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 1, pp 359-364, issn 0031-8965Article

Numerical solution of Poisson's equation with application to C-V analysis of III-V heterojunction capacitorsGRAY, J. L; LUNDSTROM, M. S.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 10, pp 2102-2109, issn 0018-9383Article

Temperature dependence of threshold current in III-V semiconductor lasers: experimental prediction and explanationSU, C. B; OLSHANSKY, R; MANNING, J et al.Applied physics letters. 1984, Vol 44, Num 11, pp 1030-1032, issn 0003-6951Article

Photochemical microetching of GaAsMOTTET, S; HENRY, L.Electronics Letters. 1983, Vol 19, Num 22, pp 919-920, issn 0013-5194Article

A comprehensive analytical model for III-V compound MISFET'sHILL, P. M.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2249-2256, issn 0018-9383Article

MOVPE of III/V semiconductors using nitrogen as the carrier gasHARDTDEGEN, H.SPIE proceedings series. 1998, pp 244-251, isbn 0-8194-2756-X, 2VolConference Paper

Microtomography observation of precipitates in semi-insulating GaAs materialsGALL, P; FILLARD, J. P; CASTAGNE, M et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5161-5169, issn 0021-8979Article

35 années consacrées aux semiconducteurs III-VALFEROV, ZH. P; TSARENKOV, B. V.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 12, pp 2113-2117, issn 0015-3222Article

Novel index semiconductor surfacesHENINI, Mohamed.Microelectronics journal. 1995, Vol 26, Num 8, issn 0959-8324, 168 p.Conference Proceedings

Effects of energy relaxation time on performance of AlGaAs/GaAs heterojunction bipolar transistorHORIO, K.Electronics Letters. 1989, Vol 25, Num 8, pp 547-549, issn 0013-5194, 3 p.Article

In situ grown Schottky gates on GaAs/AlGaAs heterojunctionsTIMMERING, C. E; LAGEMAAT, J. M; FOXON, C. T et al.Semiconductor science and technology. 1988, Vol 3, Num 11, pp 1139-1142, issn 0268-1242Article