ct.\*:("III-V semiconductors")
Results 1 to 25 of 3555
Selection :
Photoluminescence in cylindrical quantum well wires in the presence of shallow impurities and magnetic fieldPEREZ-MERCHANCANO, S. T; MARQUES, G. E.Physica status solidi. B. Basic research. 1999, Vol 212, Num 2, pp 375-381, issn 0370-1972Article
Time- and temperature-resolved photoluminescence of GaN:Mg epitaxial layers grown by MOVPEGURSKII, A. L; MARKO, I. P; LUTSENKO, E. V et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 361-364, issn 0370-1972Conference Paper
Impurity-related emission in the photoluminescence from p-type modulation doped Al1-xGaxAs/GaAs heterostructuresBRYJA, L; KUBISA, M; RYCZKO, K et al.Solid state communications. 2002, Vol 122, Num 7-8, pp 379-384, issn 0038-1098Article
Deep levels in Ti-doped GaAs epilayers grown on undoped GaAs (100) substratesWUI, Y. H; KANG, T. W; KIM, T. W et al.Applied surface science. 1999, Vol 148, Num 3-4, pp 211-214, issn 0169-4332Article
Hydrogen in Be-doped GaInAsP lattice matched to InP : diffusion and interactions with dopantsGERARD, F; THEYS, B; LUSSON, A et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1136-1140, issn 0268-1242Article
Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN : III-V nitrides and silicon carbideKIM, S; RHEE, S. J; LI, X et al.Journal of electronic materials. 1998, Vol 27, Num 4, pp 246-254, issn 0361-5235Article
Similarities in the bandedge and deep-centre photoluminescence mechanisms of ZnO and GaNREYNOLDS, D. C; LOOK, D. C; JOGAI, B et al.Solid state communications. 1997, Vol 101, Num 9, pp 643-646, issn 0038-1098Article
Effect of annealing and hydrogenation on neutron-transmutation-doped GaAsCHO, H. D; SHON, Y; KANG, T. W et al.Physica status solidi. A. Applied research. 1994, Vol 146, Num 2, pp 603-611, issn 0031-8965Article
Effect of heat treatment on the state of Si impurity in GaAs studied with the photoluminescence techniqueSUEZAWA, M; KASUYA, A; NISHINA, Y et al.Journal of applied physics. 1993, Vol 73, Num 6, pp 3035-3040, issn 0021-8979Article
Formation of four new shallow emissions in Mn+ ion-implanted GaAs grown by molecular beam epitaxy having extremely low concentration of background impuritiesHONGLIE SHEN; MAKITA, Y; NIKI, S et al.Applied physics letters. 1993, Vol 63, Num 13, pp 1780-1782, issn 0003-6951Article
Kinetics of luminescence of isoelectronic rare-earth ions in III-V semiconductorsLOZYKOWSKI, H. J.Physical review. B, Condensed matter. 1993, Vol 48, Num 24, pp 17758-17769, issn 0163-1829Article
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayersJUNYONG KANG; YAOWEN SHEN; ZHANGUO WANG et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 303-307, issn 0921-5107Conference Paper
The 3.466 eV bound exciton in GaNMONEMAR, B; CHEN, W. M; PASKOV, P. P et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 489-492, issn 0370-1972Conference Paper
Defects and defect identification in group III-nitridesMEYER, B. K; HOFMANN, D. M; ALVES, H et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 71, Num 1-3, pp 69-76, issn 0921-5107Conference Paper
Passivation of shallow and deep by hyrogen plasma exposure in alGAAs growth by molecular beam epitaxyBOSACCHI, A; FRANCHI, S; GOMBIA, E et al.Japanese journal of applied physics. 1994, Vol 33, Num 6A, pp 3348-3353, issn 0021-4922, 1Article
Photoluminescence properties of (Al,Ga)As alloys and GaAs under pressure in the framework of DX centers studiesLEROUX, M.Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum. 1994, Vol 108, pp 97-122, issn 1012-0386Article
Electron structure of rare-earth impurities in III-V compounds (a review article)MASTEROV, V. F; TYBULEWICZ, A.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 791-801, issn 1063-7826Article
Nitrogen-related complexes in Ga(AsN) and their interaction with hydrogenBISSIRI, M; GASPARI, V; VON HOGERSTHAL, G. Baldassarri et al.Physica status solidi. A. Applied research. 2002, Vol 190, Num 3, pp 651-654, issn 0031-8965Conference Paper
Origin of yellow luminescence in n-GaN induced by high-energy 7 MeV electron irradiationHAYASHI, Yasuhiko; SOGA, Tetsuo; UMENO, Masayoshi et al.Physica. B, Condensed matter. 2001, Vol 304, Num 1-4, pp 12-17, issn 0921-4526Article
Activation of p-type GaN with irradiation of the second harmonics of a Q-switched Nd:YAG laserCHENG, Yung-Chen; LIAO, Chi-Chih; FENG, Shih-Wei et al.Physica status solidi. B. Basic research. 2001, Vol 228, Num 2, pp 357-360, issn 0370-1972Conference Paper
Compensation mechanism in MOCVD and MBE grown GaN: MgALVES, H; BÖHM, M; HOFSTAETTER, A et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 38-41, issn 0921-4526Conference Paper
Optical characterization of carbon-doped Ga0.47In0.53AsGERLING, M; HAMM, R. A.Journal of luminescence. 1999, Vol 85, Num 1-3, pp 103-106, issn 0022-2313Article
Effect of neutron irradiation and annealing on the intensity of the copper related 1.01 eV emission band in n-type GaAsGLINCHUK, K. D; PROKHOROVICH, A. V.Crystal research and technology (1979). 1997, Vol 32, Num 3, pp 391-394, issn 0232-1300Article
Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition. II: 1.13 eV photoluminescence emissionZHAO, J. L; GAO, Y; LIU, X. Y et al.Journal of materials science letters. 1994, Vol 13, Num 23, pp 1694-1696, issn 0261-8028Article
Selective magneto-luminescence spectroscopy of donor-acceptor pairs in n-GaAsWYSMOLEK, A.Physica status solidi. B. Basic research. 2003, Vol 235, Num 1, pp 48-53, issn 0370-1972, 6 p.Conference Paper