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Electrical characteristics and surface chemistry of P₂S₅-passivated GaAsSAKATA, M; IKOMA, H.Japanese journal of applied physics. 1994, Vol 33, Num 7A, pp 3813-3824, issn 0021-4922, 1Article

Bias dependence of Schottky barrier height in GaAs from internal photoemission and current-voltage characteristicsISHIDA, T; IKOMA, H.Journal of applied physics. 1993, Vol 74, Num 6, pp 3977-3982, issn 0021-8979Article

X-ray photoelectrons spectroscopic study of oxidation of InPSHIBATA, N; IKOMA, H.Japanese journal of applied physics. 1992, Vol 31, Num 12A, pp 3976-3980, issn 0021-4922, 1Article

Magnetically excited plasma oxidation of GaAsNAKAMURA, R; IKOMA, H.Japanese journal of applied physics. 1996, Vol 35, Num 1A, pp L8-L11, issn 0021-4922, 2Article

Analysis of Si Schottky barrier characteristics based on a new interfacial layer modelIKOMA, H; MAEDA, K.Japanese journal of applied physics. 1991, Vol 30, Num 1, pp 19-26, issn 0021-4922, 8 p., p.1Article

Possible existence of a surplus (oxygen-excess) Ga oxide in the thermal oxide of GaAsISHIKAWA, T; IKOMA, H.Japanese journal of applied physics. 1993, Vol 32, Num 4B, pp L607-L609, issn 0021-4922, 2Article

Antimony passivation of InPNOBUSAWA, H; IKOMA, H.Japanese journal of applied physics. 1993, Vol 32, Num 9A, pp 3713-3719, issn 0021-4922, 1Article

X-ray photoelectron spectroscopic study of oxidation of InP. II: Thermal oxides grown at high temperaturesSHIBATA, N; IKOMA, H.Japanese journal of applied physics. 1993, Vol 32, Num 3A, pp 1197-1200, issn 0021-4922, 1Article

UNE OBSERVATION DE PAPILLOME DU CONDUIT AUDITIF EXTERNEYOKOYAMA M; IKOMA H; ONO K et al.1977; PRACT. OTOL.; JAP.; DA. 1977; VOL. 70; NO 5; PP. 375-380; ABS. ANGL.; BIBL. 24 REF.Article

A 5000-CHANNEL POWER FET WITH A NEW DIFFUSED GATE STRUCTURE.OZAWA O; SASAKI Y; IWASAKI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 163-166; BIBL. 3 REF.Conference Paper

Current-voltage characteristics and interface state density of GaAs Schottky barrierMAEDA, K; IKOMA, H; SATO, K et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2560-2562, issn 0003-6951Article

Electrical characteristics and the X-ray photoelectron spectroscopy of AlN/InP structure fabricated by helicon-wave-excited plasma nitridation of vacuum-evaporated AlHAYASHI, H; HATANAKA, I; SATO, S et al.Japanese journal of applied physics. 1997, Vol 36, Num 7A, pp 4235-4240, issn 0021-4922, 1Article

Effect of post-thermal annealing on the various sulfur passivations of GaAsSAKATA, M; HAYAKAWA, M; NAKANO, N et al.Japanese journal of applied physics. 1995, Vol 34, Num 7A, pp 3447-3456, issn 0021-4922, 1Article

Posterior canal-derived vestibulocortical pathways in catsMATSUO, S; HOSOGAI, M; MATSUI, H et al.Neuroscience letters. 1995, Vol 183, Num 1-2, pp 131-134, issn 0304-3940Article

Selenium passivation of GaAs with Se/NH₄OH solutionTSUCHIYA, K; SAKATA, M; FUNYU, A et al.Japanese journal of applied physics. 1995, Vol 34, Num 11, pp 5926-5932, issn 0021-4922, 1Article

Nonideal J-V characteristics and interface states of an a-Si:H Schottky barrierMAEDA, K; UMEZU, I; IKOMA, H et al.Journal of applied physics. 1990, Vol 68, Num 6, pp 2858-2867, issn 0021-8979, 10 p.Article

Magnetically excited plasma oxidation of InP : effects of Ar mixing and substrate heatingSATO, S; FUNYU, A; IKOMA, H et al.Japanese journal of applied physics. 1996, Vol 35, Num 1A, pp L4-L7, issn 0021-4922, 2Article

X-ray photoelectrons spectroscopy and electrical characteristics of Na₂S-passivated GaAs surface : comparison with (NH₄)₂S_x-passivationSATO, K; SAKATA, M; IKOMA, H et al.Japanese journal of applied physics. 1993, Vol 32, Num 8, pp 3354-3362, issn 0021-4922, 1Article

Gonadotrophin dependence of steroidogenesis by human corpora lutea of different ages during the menstrual cycleYAMOTO, M; IKOMA, H; NAKANO, R et al.Gynecologic and obstetric investigation. 1988, Vol 26, Num 3, pp 225-231, issn 0378-7346Article

Si oxynitridation with helicon-wave excited nitrogen plasma : Effects of plasma divergence and concentration on substratesKIMURA, S; ITO, T; TABAKOMORI, M et al.Japanese journal of applied physics. 1997, Vol 36, Num 3B, pp L316-L319, issn 0021-4922, 2Article

Physicochemical properties of starches from purple and orange fleshed sweet potato roots at two levels of fertilizerNODA, T; TAKAHATA, Y; SATO, T et al.Stärke. 1996, Vol 48, Num 11-12, pp 395-399, issn 0038-9056Article

Magnetically excited plasma oxynitridation of Si at room temperatureOKAMOTO, Y; NAGASAWA, H; KITAYAMA, D et al.Japanese journal of applied physics. 1995, Vol 34, Num 8A, pp L955-L957, issn 0021-4922, 2Article

Recovery curve of the H-reflex in normal infants, central coordination disturbance cases and cerebral palsy patients within the first year of lifeFUTAGI, Y; ABE, J; TANAKA, J et al.Brain & development (Tokyo. 1979). 1988, Vol 10, Num 1, pp 8-12, issn 0387-7604Article

Combined effects of planting and harvesting dates on starch properties of sweet potato rootsNODA, T; TAKAHATA, Y; SATO, T et al.Carbohydrate polymers. 1997, Vol 33, Num 2-3, pp 169-176, issn 0144-8617Article