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Results 1 to 23 of 23

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Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETsWOOKYUNG SUN; HYUNGSOON SHIN.Solid-state electronics. 2014, Vol 94, pp 23-27, issn 0038-1101, 5 p.Article

Anomalous drain-induced barrier lowering effect of thin-film transistors due to capacitive coupling voltage of light-shield metalMIRYEON KIM; HYUNGSOON SHIN.Electronics letters. 2014, Vol 50, Num 15, pp 1093-1095, issn 0013-5194, 3 p.Article

A comprehensive model for inversion layer hole mobility for simulation of submicrometer MOSFET'sAGOSTINELLI, V. M; HYUNGSOON SHIN; TASCH, A. F et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 1, pp 151-159, issn 0018-9383, 9 p.Article

Unified Analytical Model for Switching Behavior of Magnetic Tunnel JunctionHYEIN LIM; SEUNGJUN LEE; HYUNGSOON SHIN et al.IEEE electron device letters. 2014, Vol 35, Num 2, pp 193-195, issn 0741-3106, 3 p.Article

Magneto-logic device based on a single-layer magnetic tunnel junctionLEE, Seungyeon; CHOA, Sunghoon; LEE, Seungjun et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 8, pp 2040-2044, issn 0018-9383, 5 p.Article

Plasmonic Nanoholes in a Multichannel Microarray Format for Parallel Kinetic Assays and Differential SensingIM, Hyungsoon; LESUFFLEUR, Antoine; LINDQUIST, Nathan C et al.Analytical chemistry (Washington). 2009, Vol 81, Num 8, pp 2854-2859, issn 0003-2700, 6 p.Article

A Full Adder Design Using Serially Connected Single-Layer Magnetic Tunnel Junction ElementsLEE, Seungyeon; SEO, Sunae; LEE, Seungjun et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 890-895, issn 0018-9383, 6 p.Article

Current-crowding effect in diagonal MOSFET'sHYUNSANG HWANG; HYUNGSOON SHIN; DAE-GWAN KANG et al.IEEE electron device letters. 1993, Vol 14, Num 6, pp 289-291, issn 0741-3106Article

Nanohole-Based Surface Plasmon Resonance Instruments with Improved Spectral Resolution Quantify a Broad Range of Antibody-Ligand Binding KineticsIM, Hyungsoon; SUTHERLAND, Jamie N; MAYNARD, Jennifer A et al.Analytical chemistry (Washington). 2012, Vol 84, Num 4, pp 1941-1947, issn 0003-2700, 7 p.Article

Anomalous hot carrier degradation of nMOSFET's at elevated temperaturesHYUNSANG HWANG; JUNG-SUK GOO; HOYUP KWON et al.IEEE electron device letters. 1995, Vol 16, Num 4, pp 148-150, issn 0741-3106Article

A novel macro-model for spin-transfer-torque based magnetic-tunnel-junction elementsLEE, Seungyeon; LEE, Hyunjoo; KIM, Sojeong et al.Solid-state electronics. 2010, Vol 54, Num 4, pp 497-503, issn 0038-1101, 7 p.Article

Vertically Oriented Sub-10-nm Plasmonic Nanogap ArraysIM, Hyungsoon; BANTZ, Kyle C; LINDQUIST, Nathan C et al.Nano letters (Print). 2010, Vol 10, Num 6, pp 2231-2236, issn 1530-6984, 6 p.Article

MOSFET drain engineering analysis for deep-submicrometer dimensions : a new structural approachHYUNGSOON SHIN; TASCH, A. F; BORDELON, T. J et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 8, pp 1922-1927, issn 0018-9383Article

A new weight redistribution technique for electron-electron scattering in the MC simulationKIM, Jongchol; SHIN, Hyungsoon; LEE, Chanho et al.I.E.E.E. transactions on electron devices. 2004, Vol 51, Num 9, pp 1448-1454, issn 0018-9383, 7 p.Article

A new approach to verify and derive a transverse-field dependent mobility model for electrons in MOS inversion layersHYUNGSOON SHIN; TASCH, A. F; MAZIAR, C. M et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1117-1124, issn 0018-9383, 8 p.Article

An analytical model for hot-carrier-induced degradation of deep-submicron n-channel LDD MOSFETsJUNG-SUK GOO; YOUNG-GWAN KIM; HYEOKJAE L'YEE et al.Solid-state electronics. 1995, Vol 38, Num 6, pp 1191-1196, issn 0038-1101Article

Recent progress in SERS biosensingBANTZ, Kyle C; MEYER, Audrey F; WITTENBERG, Nathan J et al.PCCP. Physical chemistry chemical physics (Print). 2011, Vol 13, Num 24, pp 11551-11567, issn 1463-9076, 17 p.Article

Plasmonic Nano-structures for Optical Data StorageMANSURIPUR, M; ZAKHARIAN, A. R; LESUFFLEUR, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2009, Vol 7505, issn 0277-786X, isbn 978-0-8194-7884-9 0-8194-7884-9, 1Vol, 75050I.1-75050I.12Conference Paper

High-Affinity Binding of Remyelinating Natural Autoantibodies to Myelin-Mimicking Lipid Bilayers Revealed by Nanohole Surface Plasmon ResonanceWITTENBERG, Nathan J; IM, Hyungsoon; XIAOHUA XU et al.Analytical chemistry (Washington). 2012, Vol 84, Num 14, pp 6031-6039, issn 0003-2700, 9 p.Article

Plasmonic Nanohole Arrays for Real-Time Multiplex BiosensingLESUFFLEUR, Antoine; IM, Hyungsoon; LINDQUIST, Nathan C et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 7035, pp 703504.1-703504.10, issn 0277-786X, isbn 978-0-8194-7255-7 0-8194-7255-7, 1VolConference Paper

Magnetic Ligation Method for Quantitative Detection of MicroRNAsLIONG, Monty; HYUNGSOON IM; MAJMUDAR, Maulik D et al.Advanced healthcare materials (Print). 2014, Vol 3, Num 7, issn 2192-2640, 1015-1019, 953 [6 p.]Article

The 3-bit gray counter based on magnetic-tunnel-junction elementsLEE, Seungyeon; KIM, Nakmyeong; YANG, Heejung et al.IEEE transactions on magnetics. 2007, Vol 43, Num 6, pp 2677-2679, issn 0018-9464, 3 p.Conference Paper

Physical analysis for saturation behavior of hot-carrier degradation in lightly doped drain N-channel metal-oxide-semiconductor field effect transistorsJUNG-SUK GOO; HYUNGSOON SHIN; HYUNSANG HWANG et al.Japanese journal of applied physics. 1994, Vol 33, Num 1B, pp 606-611, issn 0021-4922, 1Conference Paper

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