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au.\*:("IMMORLICA AA JR")

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EFFECT OF IMPLANT AND ANNEAL PARAMETERS ON BORON-IMPLANTED SI AS DETERMINED FROM ELLIPSOMETRY AND ETCHING TECHNIQUESIMMORLICA AA JR.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1141-1145; 4 P.; BIBL. 8 REF.Article

COMPARISON OF DOPING PROFILES IN CAPLESS ANNEALED AND DIELECTRICALLY CAPPED-ANNEALED ION IMPLANTED GAASSIU DP; IMMORLICA AA JR.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 5; PP. 857-868; BIBL. 8 REF.Article

TEMPERATURE GRADIENT MEASUREMENT IN LIQUID EPITAXIAL GROWTH SYSTEMSLUDINGTON BW; IMMORLICA AA JR.1979; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1979; VOL. 47; NO 5-6; PP. 619-622; BIBL. 8 REF.Article

A NOVEL TECHNOLOGY FOR FABRICATION OF BEAM-LEADED GAAS SCHOTTKY-BARRIER MIXER DIODESIMMORLICA AA JR; WOOD EJ.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 710-713; BIBL. 11 REF.Article

VELOCITY SATURATION IN N-TYPE ALXGA1-XAS SINGLE CRYSTALS.IMMORLICA AA JR; PEARSON GL.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 570-572; BIBL. 7 REF.Article

DIFFUSION COEFFICIENT AND SOLUBILITY OF GE AND GAAS IN PB AND APPLICATION TO LPE GROWTH OF GE ON GAASIMMORLICA AA JR; LUDINGTON BW.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 51; NO 1; PP. 131-139; BIBL. 12 REF.Article

APPLICATIONS OF TERNARY III-V COMPOUNDS TO HIGH-SPEED MICROWAVE MODULATION.IMMORLICA AA JR; PEARSON GL.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 829-836; BIBL. 14 REF.Article

A DIAGNOSTIC PATTERN FOR GAAS FET MATERIAL DEVELOPMENT AND PROCESS MONITORINGIMMORLICA AA JR; DECKER DR; HILL WA et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2285-2291; BIBL. 19 REF.Article

FLIP-CHIP BEO TECHNOLOGY APPLIED TO GAAS ACTIVE APERTURE RADARSWALLACE P; WOHLERT A; IMMORLICA AA JR et al.1982; MICROWAVE JOURNAL; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 11; PP. 109-113; BIBL. 6 REF.Article

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