FM NOISE MEASUREMENT OF W-BAND IMPATT DIODES WITH A QUASIOPTICAL DIRECT DETECTION SYSTEMHARTH W; LEISTNER D; FREYER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 355-356; BIBL. 5 REF.Article

THE IMPATT STORY.DE LOACH BC JR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 7; PP. 657-660; BIBL. 14 REF.Article

MEASUREMENT OF SERIES RESISTANCE IN IMPATT DIODESADLERSTEIN MG; HOLWAY LH JR; CHU SLG et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 2; PP. 179-182; BIBL. 4 REF.Article

Etude de la concurrence des oscillations dans les générateurs à diodes de transit à avalancheTOROPIN, V. A.Radiotehnika i èlektronika. 1988, Vol 33, Num 11, pp 2327-2331, issn 0033-8494Article

Time-domain modeling of IMPATT oscillatorsGOELLER, T; KAERTNER, F. X.IEEE transactions on circuits and systems. 1989, Vol 36, Num 7, pp 988-996, issn 0098-4094, 9 p.Article

SIMULATION NUMERIQUE DE LA CARACTERISTIQUE DES DIODES IMPATTDATIEV KM.1979; ACTA PHYS. CHEM.; HUN; DA. 1979; VOL. 25; NO 1-2; PP. 23-28; ABS. ENG; BIBL. 5 REF.Article

DESIGN CRITERIA FOR THE "HI" DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS.BLAKEY PA.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 13; PP. 329-330; BIBL. 12 REF.Article

Circuit losses and efficiency of distributed IMPATT oscillatorsHUBER, S; CLAASSEN, M.AEU. Archiv für Elektronik und Übertragungstechnik. 1988, Vol 42, Num 6, pp 375-379, issn 0001-1096Article

LARGE-SIGNAL COMPUTER SIMULATION OF IMPATT DIODESSCANLAN SO; BRAZIL TJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 12-21; BIBL. 34 REF.Article

LIQUID-NITROGEN-COOLED SUBMILLIMETRE-WAVE SILICON IMPATT DIODES.ISHIBASHI T; INO M; MAKIMURA T et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 299-300; BIBL. 3 REF.Article

MULTICHIP IMPATT POWER COMBINING, A SUMMARY WITH NEW ANALYTICAL AND EXPERIMENTAL RESULTSRUCKER CT; AMOSS JW; HILL GN et al.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 951-957; BIBL. 10 REF.Conference Paper

POWER CONSIDERATIONS IN IMPATT-DIODE ARRAYS WITH INCOMPLETE THERMAL ISOLATIONSUZUKI H; KURITA O; INO M et al.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 632-638; BIBL. 17 REF.Article

CRITICAL DAMPING CONDITION IN IMPATT DIODESSAXENA P.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. K207-K210; BIBL. 6 REF.Article

Near state-of-the-art power p⁺-n-n⁺ D-band IMPATT diode on a wafer with ramped n-n⁺ interfaceSINGH, J. K; GOKGOR, H. S; HOWARD, A. M et al.Proceedings of the IEEE. 1987, Vol 75, Num 12, pp 1688-1690, issn 0018-9219Article

Ionisation par chocs de niveaux profonds dans les diodes à temps de transit d'ionisation en avalanche (IMPATT) à base d'arséniure de galliumLUK'YANCHIKOVA, N. B.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 2, pp 332-337, issn 0015-3222Article

Comments on «theory and measurement of back bias voltage in IMPATT diodes»TINARI, S. C.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 1, pp 72-74, issn 0018-9480Article

Wide-band frequency conversion with power amplification of the input signalsLEVITES, A. A; TIKHOMIROV, A. A.Journal of communications technology & electronics. 1997, Vol 42, Num 12, pp 1399-1402, issn 1064-2269Article

BEAM LEAD IMPATT'S: A NEW DIMENSIONKHANDELWAL DD.1982; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1982; VOL. 25; NO 3; PP. 81-86; 5 P.Article

MICROSTRIP IMPATT-DIODE OSCILLATOR FOR 100 GHZMORGAN GB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 16; PP. 570-571; BIBL. 4 REF.Article

A STUDY OF THE IONIZATION RATES OF ELECTRONS AND HOLES IN GAAS USING A COMPUTER ANALYSIS OF THE PROPERTIES OF GAAS IMPATTSMAZUMDER N; SRIDHARAN M; ROY SK et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5855-5856; BIBL. 15 REF.Article

FURTHER COMMENTS ON "EFFECTS OF CARRIER DIFFUSION ON THE SMALL-SIGNAL BEHAVIOR OF IMPATT DIODES"BRAZIL TJ; SCANLAN JO.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2167; BIBL. 2 REF.Article

FLUCTUATIONS DANS UN OSCILLATEUR SUR LA BASE D'UN CIRCUIT A COUPLAGE PARTIELTSARAPKIN DP; KARUTIN NV.1980; RADIOTEKHNIKA; SUN; DA. 1980; VOL. 35; NO 7; PP. 19-21; BIBL. 7 REF.Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

HIGH-POWER PULSED GAAS DOUBLE-DRIFT HYBRID-READ IMPATT DIODES FOR X-BANDBERENZ JJ; KINOSHITA J; HIERL TL et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 277-278; BIBL. 5 REF.Article

OPTIMUM DESIGN FOR HIGH-POWER AND HIGH-EFFICIENCY GAAS HI-LO IMPATT DIODESNISHITANI K; SAWANO H; ISHIHARA O et al.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 210-214; BIBL. 13 REF.Article