On the diffusion and activation of n-type dopants in GeVANHELLEMONT, Jan; SIMOEN, Eddy.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 642-655, issn 1369-8001, 14 p.Article

Thin films of silica imbedded silicon and germanium quantum dots by solution processingOLIVA, Brittany L; BARRON, Andrew R.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 713-721, issn 1369-8001, 9 p.Article

Overview and status of bottom-up silicon nanowire electronicsFASOLI, A; MILNE, W. I.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 601-614, issn 1369-8001, 14 p.Article

The diffusivity of the vacancy in silicon: Is it fast or slow?VORONKOV, V. V; FALSTER, R.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 697-702, issn 1369-8001, 6 p.Article

Role of point defects on B diffusion in GeSCAPELLATO, G. G; BRUNO, E; PRIOLO, F et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 656-668, issn 1369-8001, 13 p.Article

p-type conduction in ion-implanted amorphized GeROMANO, L; IMPELLIZZERI, G; GRIMALDI, M. G et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 703-706, issn 1369-8001, 4 p.Article

Defects annealing in 4H―SiC epitaxial layer probed by low temperature photoluminescenceLITRICO, G; ZIMBONE, M; MUSUMECI, P et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 740-743, issn 1369-8001, 4 p.Article

Fluorine in Si : Native-defect complexes and the suppression of impurity diffusionLOPEZ, Giorgia M; FIORENTINI, Vincenzo; IMPELLIZZERI, Giuliana et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 4, pp 045219.1-045219.7, issn 1098-0121Article

Structural, Electronic, and Electrical Properties of Y-Doped Cd₂SnO₄CRISTALDI, Domenico Andrea; IMPELLIZZERI, Giuliana; PRIOLO, Francesco et al.Journal of physical chemistry. C. 2012, Vol 116, Num 5, pp 3363-3368, issn 1932-7447, 6 p.Article

Magnetism in melt grown dilute magnetic semiconductor Ge_1―xMn_x from electron densitySHEEBA, R. A. J. R; SARAVANAN, R; BERCHMANS, L. John et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 731-739, issn 1369-8001, 9 p.Article

Challenges and opportunities in advanced Ge pMOSFETsSIMOEN, E; MITARD, J; CAYMAX, M et al.Materials science in semiconductor processing. 2012, Vol 15, Num 6, pp 588-600, issn 1369-8001, 13 p.Article