REFRACTIVE INDEX PROFILES INDUCED BY ION IMPLANTATION INTO SILICAWEBB AP; TOWNSEND PD.1976; J. PHYS. D; G.B.; DA. 1976; VOL. 9; NO 9; PP. 1343-1354; BIBL. 1 P. 1/2Article

THEORY OF IMPLANTATION RECOIL ATOMSBETUGANOV MA; DIGILOV MU; KOSTIKOV VI et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 835-842; ABS. RUS; BIBL. 17 REF.Article

LOW DOSE DEPTH DISTRIBUTION OF RECOIL IMPLANTED ATOMSFALCONE G; OLIVA A.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 41-43; BIBL. 17 REF.Article

A SIMPLE METHOD TO PRODUCE QUASI-SIMULTANEOUS MULTIPLE-ENERGY HELIUM IMPLANTATIONPASZTI F; FRIED M; MANUABA A et al.1983; JOURNAL OF NUCLEAR MATERIALS; ISSN 0022-3115; NLD; DA. 1983; VOL. 114; NO 2-3; PP. 330-333; BIBL. 11 REF.Article

INDUCTION OF IMPLANTATION BY ANDROGENS IN MICE WITH DELAYED IMPLANTATIONROY SK; JAYASREE SENGUPTA; MANCHANDA SK et al.1980; J. REPRODUCT. FERTIL.; GBR; DA. 1980; VOL. 58; NO 2; PP. 339-343; BIBL. 21 REF.Article

A COMPARISON OF THE RATES OF ACCUMULATION OF NONPOLYADENYLATED AND POLYADENYLATED RNA IN NORMAL AND DELAYED IMPLANTING MOUSE EMBRYOSWEITLAUF HM.1982; DEVELOPMENTAL BIOLOGY; ISSN 0012-1606; USA; DA. 1982; VOL. 93; NO 1; PP. 266-271; BIBL. 2 P.Article

EMBRYONIC DIAPAUSE IN MAMMALS. PROCEEDINGS OF A SYMPOSIUM HELD AT THREDBO, NEW SOUTH WALES, AUSTRALIA, FEBRUARY 1980FLINT APF ED; RENFREE MB ED; WEIR BJ ED et al.1981; J. REPROD. FERTIL., SUPPL.; ISSN 0449-3087; GBR; DA. 1981; NO 29; 260 P.; BIBL. DISSEM.Conference Paper

UNIFORM-CARRIER-CONCENTRATION P-TYPE LAYERS IN GAAS PRODUCED BY BERYLLIUM ION IMPLANTATION.DONNELLY JP; LEONBERGER FJ; BOZLER CO et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 706-708; BIBL. 12 REF.Article

CORRELATION BETWEEN BLASTOCYST OXYGEN CONSUMPTION AND TROPHOBLAST CYTOCHROME OXIDASE REACTION AT INITIATION OF IMPLANTATION OF DELAYED MOUSE BLASTOCYSTSNILSSON BO; MAGNUSSON C; WIDEHN S et al.1982; JOURNAL OF EMBRYOLOGY AND EXPERIMENTAL MORPHOLOGY; ISSN 0022-0752; GBR; DA. 1982; VOL. 71; PP. 75-82; BIBL. 17 REF.Article

COMBINED ION IMPLANTATION-ANALYSIS SAMPLE CHAMBER.PETERSON GD; EERNISSE EP.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 9; PP. 1153-1156; BIBL. 3 REF.Article

ADVANCES IN ION IMPLANTATION PRODUCTION EQUIPMENT.WITTKOWER AB; ROSE PH; RYDING G et al.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 12; PP. 41-45; BIBL. 7 REF.Article

GRACE A L'IMPLANTATION IONIQUE: DES COMPOSANTS ET MATERIAUX NOUVEAUX.GUERNET G.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 238; PP. 15-18Article

PHENOMENES DE COMMUTATION DANS LES STRUCTURES METAL/SIO₂ IMPLANTE/SI.HANI FIKRI RAGAIE.1976; ; S.L.; DA. 1976; PP. 1-78; H.T. 32; BIBL. 8 P.; (THESE DOCT. 3E. CYCLE, SPEC. ELECTRON.; INST. NATL. POLYTECH. GRENOBLE)Thesis

THE INFLUENCE OF ION IMPLANTATION ON THE THERMAL OXIDATION OF COPPERMORRIS JR; COLLINS RA; DEARNALEY G et al.1978; J. PHYS. F; GBR; DA. 1978; VOL. 8; NO 6; PP. 1333-1342; BIBL. 29 REF.Article

PHOTO-CONDUCTIVITY OF PHOSPHORUS-ION-IMPLANTED ZINC SELENIDE.TERADA T.1976; J. PHYS. SOC JAP.; JAP.; DA. 1976; VOL. 40; NO 4; PP. 1048-1055; BIBL. 20 REF.Article

SOME PROPERTIES OF ION-IMPLANTED P-N JUNCTIONS IN SILICON.ZANDVELD P.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 8; PP. 659-667; H.T. 1; BIBL. 21 REF.Article

A SELECTED BIBLIOGRAPHY ON ION IMPLANTATION IN SOLID STATE TECHNOLOGY.PLUNKETT JC; STONE JL.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 12; PP. 49-55; BIBL. 6 P. 1/2Article

CORROSION BEHAVIOUR OF METALS AFTER ION IMPLANTATION OR PULSED LASER IRRADIATION = COMPORTEMENT DES METAUX A LA CORROSION APRES IMPLANTATION D'IONS ET IRRADIATION PAR LASERMAZZOLDI P; LO RUSSO S; BONORA PL et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 63; NO 1-4; PP. 17-24; BIBL. 16 REF.Conference Paper

DIGITAL FILTERS WITH FAST COEFFICIENT IMPLEMENTATIONNARRAWAY JJ; VENKATESAN R.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 19; PP. 852-853; BIBL. 3 REF.Article

FORMATION OF SHALLOW PHOTODIODES BY IMPLANTATION OF BORON INTO MERCURY CADMIUM TELLURIDEPITCHER PG; HEMMENT PLF; DAVIS QV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1090-1092; BIBL. 9 REF.Article

PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORSDAEJE CHIN; KUMP MR; HEE GOOK LEE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 336-340; BIBL. 18 REF.Article

CONCEPTION ELECTRIQUE ET IMPLANTATION DE CIRCUITS INTEGRES = ELECTRICAL AND MANUFACTURING DESIGN OF INTEGRATED CIRCUITSMALLADI VENKATA SUBBA RAO.1982; ; FRA; DA. 1982; 185 P.; 21 CM; BIBL. 7 P.; TH. DOCT.-ING.: GENIE INFORM./GRENOBLE, I.N.P./1982Thesis

GAAS HALL DEVICES PRODUCED BY LOCAL ION IMPLANTATIONPETTENPAUL E; HUBER J; WEIDLICH H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 781-786; BIBL. 30 REF.Article

ION IMPLANTATION MASKING ABILITY DEGRADATION IN HIGH TEMPERATURE ANNEALED MO FILMNOZAKI T; OKABAYASHI H; HIGUCHI K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 6; PP. 1121-1127; BIBL. 17 REF.Article

ACCELERATOR SYSTEMS FOR ION IMPLANTATION RESEARCHBANNENBERG JG.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 44; NO 1-4; PP. 3-10; BIBL. 14 REF.Conference Paper