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PHOTOLUMINESCENCE FROM HE, AR, FE, AND CR ION-IMPLANTED MGOCRAWFORD JR; DRAGSDORF RD.1973; J. APPL. PHYS.; U.S.A.; DA. 1973; VOL. 44; NO 1; PP. 385-388; BIBL. 10 REF.Serial Issue

DISPOSITIFS DE POSTACCELERATION ET DE RALENTISSEMENT UTILISES SUR L'IMPLANTEUR D'ORSAY.CHAUMONT J; BERNAS H; SALOME M et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 108-113; BIBL. 4 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

HOMOGENEITE DU DOPAGE PAR IMPLANTATION IONIQUE.MONFRET A; BONIS M; GUERNET G et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 348; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

ORION: UNE NOUVELLE GAMME D'IMPLANTEURS INDUSTRIELS HAUTES PERFORMANCES.MARTEL C; SEIDE C.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 342; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

ION IMPLANTATION.DEARNALEY G.1975; NATURE; G.B.; DA. 1975; VOL. 256; NO 5520; PP. 701-705; BIBL. 11 REF.Article

APPLICATION DE LA REACTION 1H(11B, ALPHA )ALPHA ALPHA A L'ANALYSE DE L'HYDROGENE IMPLANTE DANS LE SILICIUM.GUIVARC'H A; PIAGUET J; DANIELOU R et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 141-149; BIBL. 1 P. 1/2; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

THE DEPTH DISTRIBUTION OF PHOSPHORUS IONS IMPLANTED INTO SILICON CRYSTALS.BLOOD P; DEARNALEY G; WILKINS MA et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 4; PP. 245-251; BIBL. 10 REF.Article

MESURES EXPERIMENTALES DE LA PENETRATION DES PROTONS DANS LE SILICIUM.CASTAING C; BARUCH P; PICARD C et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 61-68; ABS. ANGL.; BIBL. 11 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

THE ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON.BLOOD P; DEARNALEY G; WILKINS MA et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5123-5128; BIBL. 18 REF.Article

IMPLANTATION D'IONS LOURDS DANS LES MONOCRISTAUX DE SILICIUMKISELEVICH M; LYATUSHINSKIJ A; ZHUK V et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 4; PP. 1080-1084; BIBL. 7 REF.Article

HELIUM IMPLANTATION BY HE+-BOMBARDMENT OF TITANIUM DURING DEPOSITION FROM THE VAPOR PHASE.VENKER H.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 23; NO 3; PP. 209-210; BIBL. 3 REF.Article

IMPLANTATION IONIQUE DANS LES GRENATS FERRIMAGNETIQUES.JOUVE H; GAILLARD JP; PIAGUET J et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 8-14; BIBL. 10 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

THE ION IMPLANTATION OF POWDERS.FREEMAN JH; TEMPLE W.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 85-86Article

DEPTH DISTRIBUTION OF GALLIUM IONS IMPLANTED INTO SILICON CRYSTALS.DEARNALEY G; GARD GA; TEMPLE W et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 1; PP. 17-18; BIBL. 12 REF.Article

MODELES MATHEMATIQUES DE L'IMPLANTATION IONIQUE.COMBASSON JL.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 321-328; BIBL. 15 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

STUDIE VAN DE IONENIMPLANTATIE IN FERROMAGNETICA. = ETUDE DE L'IMPLANTATION IONIQUE DANS LES FERROMAGNETIQUESPATTYN H.1977; VERH. KKL. ACAD. WETENSCH. LETTEREN SCHONE KUNSTEN BELG., KL. WETENSCH.; BELG.; DA. 1977; VOL. 39; NO 141; PP. 1-73; BIBL. 1 P. 1/2Serial Issue

ON AMORPHOUS LAYER FORMATION IN SILICON BY ION IMPLANTATION.BOURGOIN JC; MORHANGE JF; BESERMAN R et al.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 22; NO 3; PP. 205-208; BIBL. 17 REF.Article

CALCULATION OF PROJECTED RANGES OF IMPLANTED IONS.GARTNER K; GROSSER H; HEHL K et al.1974; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1974; VOL. 64; NO 2; PP. K127-K130; BIBL. 11 REF.Article

SECONDARY ION EMISSION STUDIES OF THE RANGE PROFILES OF IMPLANTED IONS.COLLIGON JS; FULLER D.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 3-4; PP. 183-187; BIBL. 15 REF.Article

THE ANALYSIS OF FORWARD SCATTERING CHANNELING DATA.BERLINER R; KOEHLER JS.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 3-4; PP. 141-145; BIBL. 10 REF.Article

CONTRAST AND RESOLUTION OF SMALL DISLOCATION LOOPS IN HIGH-VOLTAGE ELECTRON MICROSCOPY.CHEN LJ; SESHAN K; THOMAS G et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 309-319; ABS. ALLEM.; BIBL. 14 REF.Article

INFLUENCE OF IMPLANTED DOSE ON THE RECRYSTALLIZATION OF SI AMORPHOUS LAYER.BAERI P; CAMPISANO SU; CIAVOLA G et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 4; PP. 154-155; BIBL. 10 REF.Article

POLYATOMIC-ION IMPLANTATION DAMAGE IN SILICON.DAVIES JA; FOTI G; HOWE LM et al.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 23; PP. 1441-1444; BIBL. 12 REF.Article

THE DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON.FAIR RB; TSAI JCC.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1689-1696; BIBL. 35 REF.Article

PROFILS DE DEFAUTS LORS DE L'IMPLANTATION D'IONS DANS LE SILICIUMGASHTOL'D VN; GERASIMENKO NN; DVURECHENSKIJ AV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 5; PP. 835-839; BIBL. 16 REF.Article

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