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THE EFFECT OF ION IMPLANTER DESIGN UPON IMPLANT UNIFORMITYWITTKOWER AB.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 9; PP. 77-81; BIBL. 11 REF.Article

SIMPLE AND ACCURATE REPRESENTATION OF IMPLANTATION PARAMETERS BY LOW ORDER POLYNOMALSSELBERHERR S; GUERRERO E.1981; SOLID STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 591-593; BIBL. 5 REF.Article

CALIBRATION OF ION IMPLANTATION SYSTEMSWITTKOWER AB.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 11; PP. 61-67; BIBL. 8 REF.Article

GRACE A L'IMPLANTATION IONIQUE ET A L'ELECTRON-LITHOGRAPHIE, IBM A REALISE UNE RAM DE 8 K BITS EN MOS AVEC ACCES EN 90 NS.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 214; PP. 7Article

CHARACTERISTICS OF ENHANCEMENT/DEPLETION (E/D) GATE MOSFET FABRICATED USING ION IMPLANTATION.SASAKI N.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 777-783; BIBL. 21 REF.Article

ION IMPLANTED BIPOLAR HIGH PERFORMANCE TRANSISTORS WITH POLYSIL EMITTER.GRAUL J; GLASL A; MURRMANN H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 450-454; BIBL. 10 REF.Conference Paper

THE ROLE OF ELEVATED TEMPERATURES IN THE IMPLANTATION OF GAAS.DAVIES DE; ROOSILD S; LOWE L et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 733-736; BIBL. 14 REF.Article

COMPARISON OF NOISE PARAMETERS OF DIFFUSED AND ION-IMPLANTED MICROWAVE TRANSISTORS.LUDVIK S; FROESS P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 4; PP. 40-41; BIBL. 11 REF.Article

LATERAL SPREAD OF ION-IMPLANTED IMPURITIES IN SILICON.PAN E; FANG FF.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2801-2803; BIBL. 5 REF.Article

THRESHOLD-VOLTAGE SENSITIVITY OF ION-IMPLANTED M.O.S. TRANSISTORS DUE TO PROCESS VARIATIONS.SCHEMMERT W; ZIMMER G.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 9; PP. 151-152; BIBL. 3 REF.Article

ION IMPLANTATION.DEARNALEY G; FREEMAN JH; NELSON RS et al.1973; DEFECTS CRYSTALL. SOLIDS; NETHERL.; DA. 1973; VOL. 8; PP. (817P.); BIBL. DISSEM.Article

BREVET 2.132.712 (B) (7212086). A 6 AVRIL 1972. PROCEDE DE TRAITEMENT SUPERFICIEL DE L'ACIER PAR IMPLANTATION D'IONSsdPatent

ACTIVATION AND PROCESS CHARACTERISTICS OF INFRA RED RAPID ISOTHERMAL AND FURNACE ANNEALING TECHNIQUESDOWNEY DF; RUSSO CJ; WHITE JT et al.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 9; PP. 87-93; BIBL. 16 REF.Article

ION IMPLANTATION TECHNOLOGY AND MACHINESWILSON RG.1980; ADV. ELECTRON. ELECTRON. PHYS., SUPPL.; USA; DA. 1980; NO 13; SUPPL.; PP. 45-71; BIBL. 2 P.Article

BORIMPLANTIERTE WIDERSTAENDE FUER PIEZORESISTIVE WANDLER = RESISTANCE IMPLANTEE PAR B POUR TRANSDUCTEURS PIEZORESISTIFSSCHUBERT D.1980; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1980; VOL. 29; NO 7; PP. 306-308; ABS. RUS/ENG/FRE; BIBL. 13 REF.Article

ION IMPLANTATION HARDENINGBULICHEV SI; ALEKHIN VP; KOMISSAROV AP et al.1980; METALLOFIZIKA; UKR; DA. 1980; VOL. 2; NO 4; PP. 108-114; ABS. ENG; BIBL. 7 REF.Article

HIGH CURRENT DOSIMETRY TECHNIQUESMCKENNA CM.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 44; NO 1-4; PP. 93-110; BIBL. 30 REF.Conference Paper

MICROALLOY LAYER FORMATION BY ION IMPLANTATION = FORMATION DE COUCHES MICROALLIEES PAR IMPLANTATION D'IONSPICRAUX ST; MYERS SM; FOLLSTAEDT DM et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 63; NO 1; PP. 1-2; BIBL. 8 REF.Conference Paper

ION-IMPLANTATION DISTRIBUTIONS IN NON-UNIFORM TARGETS: PROJECTED RANGEWINTERBON KB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 31-38; BIBL. 12 REF.Article

A TWO-GUN ION BEAM SYSTEM FOR DYNAMIC RECOIL IMPLANTATIONFISCHER G; HILL AE; COLLIGON JS et al.1978; VACUUM; GBR; DA. 1978; VOL. 28; NO 6-7; PP. 277-281; BIBL. 11 REF.Article

ENCAPSULATION OF ION-IMPLANTED GAAS USING NATIVE OXIDES.SEALY BJ; D'CRUZ ADE.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 15; PP. 323-324; BIBL. 12 REF.Article

TRANSISTORS WITH BORON BASES PREDEPOSITED BY ION IMPLANTATION AND ANNEALED IN VARIOUS OXYGEN AMBIENTS.SEIDEL TE; PAYNE RS; MOLINE RA et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 581-584; BIBL. 12 REF.Conference Paper

CIRCUIT EQUIVALENT D'UNE DIODE SEMICONDUCTRICE A DEFAUTS CREES PAR IRRADIATIONNIKOLAEVSKIJ IF; STENIN V YA; SHURENKOV VV et al.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 6; PP. 1267-1274; BIBL. 6 REF.Article

BIPOLAR HIGH-SPEED LOW-POWER GATES WITH DOUBLE IMPLANTED TRANSISTORS.GRAUL J; KAISER H; WILHELM WJ et al.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 4; PP. 201-204; BIBL. 13 REF.Article

ION-IMPLANTED GE TRANSISTOR: BASIC EXPERIMENTS.SCHMID K; KRANZ H; RYSSEL H et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 2; PP. 523-530; ABS. ALLEM.; BIBL. 20 REF.Article

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