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ELECTRICAL CONDUCTION IN DOPED IODINETENNEKONE K; DIVIGALPITIYA WMR; ARIYASINGHA WM et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 12; PP. 5366-5368; BIBL. 6 REF.Article

PHOTO- AND ELECTROLUMINESCENCE OF UNDOPED AND RARE EARTH DOPED ZNO ELECTROLUMINORSBHUSHAN S; PANDEY AN; KAZA BR et al.1979; J. LUMINESC.; NLD; DA. 1979; VOL. 20; NO 1; PP. 29-38; BIBL. 15 REF.Article

MANY-ELECTRON EFFECTS FOR INTERSTITIAL TRANSITION-METAL IMPURITIESDELEO GG; WATKINS GD; FOWLER WB et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 8; PP. 4962-4971; BIBL. 17 REF.Article

POLARIZABILITIES AND LOCAL FIELD ESTIMATES FOR TEN OXIDES FROM REFRACTIVE-INDEX MEASUREMENTS ON DOPED FILMSGOLDNER R; GRIMBERGEN M; LESLIE W et al.1981; APPL. OPT.; ISSN 0003-6935; USA; DA. 1981; VOL. 20; NO 13; PP. 2275-2279; BIBL. 40 REF.Article

SUBSTITUTIONAL 3D IMPURITIES IN SILICON: A SELF-REGULATING SYSTEMZUNGER A; LINDEFELT U.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 4; PP. 343-346; BIBL. 9 REF.Article

ATOMS EMBEDDED IN AN ELECTRON GAS: IMMERSION ENERGIESPUSKA MJ; NIEMINEN RM; MANNINEN M et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3037-3047; BIBL. 27 REF.Article

TRANSIENT PHOTOCURRENT SPECTROSCOPY IN A-AS2SE3 CONTAINING IMPURITIESVANINOV V; ORENSTEIN J; KASTNER MA et al.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 4; PP. 399-406; BIBL. 10 REF.Article

THE ELECTRONIC STRUCTURE OF IMPURITIES AND DEFECTS IN SIO2PANTELIDES ST.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 89; NO 1; PP. 103-108; BIBL. 11 REF.Conference Paper

X-ACCEPTORS IN SILICONSEARLE CW; OHMER MC; HEMENGER PM et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 12; PP. 1597-1600; BIBL. 16 REF.Article

ELECTRONIC STRUCTURE OF TRANSITION-ATOM IMPURITIES IN SEMICONDUCTORS: SUBSTITUTIONAL 3D IMPURITIES IN SILICONZUNGER A; LINDEFELT U.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1191-1227; BIBL. 68 REF.Article

HOLE PHOTOIONISATION CROSS SECTIONS FOR DEEP LEVEL IMPURITIES IN SILICONLEDEBO LA.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 22; PP. 3279-3287; BIBL. 22 REF.Article

ELECTRICAL TRANSPORT IN A-AS2SE3 CONTAINING METALLIC IMPURITIESPFISTER G; MORGAN M; LIANG KS et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 4; PP. 227-230; BIBL. 24 REF.Article

PAIR SPECTRA, EDGE EMISSION, AND THE SHALLOW ACCEPTORS IN MELT-GROWN ZNSE.SWAMINATHAN V; GREENE LC.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 12; PP. 5351-5363; BIBL. 37 REF.Article

DOPAGE DU TELLURURE DE ZINC PAR DES ACCEPTEURS ET DES DONNEURSPAUTRAT JEAN LOUIS; MAGNEA NOEL; MOLVA ENGIN et al.1981; ; FRA; DA. 1981; DGRST/79 7 0774; 18 P.; 30 CM; BIBL. 9 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

PHOTOIONIZATION CROSS-SECTIONS AND ENERGY LEVELS OF GOLD, IRON, PLATINUM, SILVER, AND TITANIUM IN SILICONOKUYAMA M; MATSUNAGA N; CHEN JW et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 4; PP. 501-515; BIBL. 16 REF.Article

ZERO-PHONON RECOMBINATION SPECTRA OF DONOR-ACCEPTOR PAIRS IN GAP AND ZNSE: MODEL-IMPURITY-POTENTIAL APPROACHMUNNIX S; KARTHEUSER E.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 6776-6787; BIBL. 55 REF.Article

CRISTALLISATION DIRIGEE DU BISMUTH. IV. DISTRIBUTION DES IMPURETES FACILEMENT OXYDABLESARTYUKHIN PI; MITYAKIN YU L; SHAVINSKIJ BM et al.1980; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. HIM. NAUK; ISSN 0002-3426; SUN; DA. 1980; NO 14; PP. 40-44; ABS. ENG; BIBL. 12 REF.Article

THEORY OF DEEP IMPURITY LEVELS IN CUCLSHANG YUAN REN; ALLEN RE; DOW JD et al.1982; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 2; PP. 1205-1213; BIBL. 22 REF.Article

DEEP STATES IN TRANSITION METAL DIFFUSED GALLIUM PHOSPHIDEBRUNWIN RF; HAMILTON B; HODGKINSON J et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 249-256; BIBL. 31 REF.Article

OPTICAL AND MAGNETIC RESONANCE STUDIES OF TRANSITION METAL IONS AND COMPLEXES IN ALKALI HALIDESNARAYANA M; SIVASANKAR VS; RADHAKRISHNA S et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 105; NO 1; PP. 11-45; BIBL. 3 P.Article

THE EFFECTS OF FERROMAGNETISM ON INTERGRANULAR SEGREGATION IN IRONSZKLARZ KE; WAYMAN ML.1981; ACTA METALL.; ISSN 0001-6160; USA; DA. 1981; VOL. 29; NO 2; PP. 341-349; ABS. FRE/GER; BIBL. 20 REF.Article

EFFECTS IMPURITIES ON MONOCLINIC(II)-CUBIC(I) TRANSFORMATION OF LITHIUM SULFATERAO CRM; MEHROTA PN.1978; J. APPL. CHEM. BIOTECHNOL.; GBR; DA. 1978; VOL. 28; NO 9; PP. 608-610; BIBL. 10 REF.Article

POLARIZABILITIES OF DONORS IN ELEMENTAL SEMICONDUCTORS. IIPALANIYANDI E.1980; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1980; VOL. 100; NO 1; PP. 321-325; ABS. GER; BIBL. 19 REF.Article

ELECTRONIC STRUCTURE OF MAGNETIC AND NON MAGNETIC SUBSTITUTIONAL 3D TRANSITION METAL IMPURITIES IN GERMANIUMKATAYAMA YOSHIDA H; SHINDO K.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 7; PP. 999-1002; BIBL. 12 REF.Article

CONDUCTIVITE ELECTRIQUE ET PROPRIETES DIELECTRIQUES DE CRISTAUX KNBO3 CONTENANT DES IMPURETESYANOVSKIJ VK.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 7; PP. 2201-2204; BIBL. 3 REF.Article

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