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STUDY OF THERMALLY INDUCED DEEP LEVELS IN AL-DOPED SI.MARCHAND RL; CHIH TANG SAH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 336-341; BIBL. 12 REF.Article

LE GERMANIUM DE HAUTE PURETE. I. IMPURETES IMPURETES RESIDUELLES ELECTRIQUEMENT ACTIVESBYKOVA EM; GONCHAROV LA; LIFSHITS TM et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1853-1860; BIBL. 17 REF.Article

DEFORMATION MECHANISMS IN H.C.P. METALS AT ELEVATED TEMPERATURES. II: CREEP BEHAVIOR OF A MG-0.8% AL SOLID SOLUTION ALLOYVAGARALI SS; LANGDON TG.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 6; PP. 1157-1170; ABS. FRE/GER; BIBL. 35 REF.Article

LUMINESCENCE EXCITATION SPECTRA AND THEIR EXCITON STRUCTURES OF ZNS PHOSPHORS. I: MN, (CU, AL), (AG, AL) AND (AU, AL) DOPED PHOSPHORSHOSHINA T; KAWAI H.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 2; PP. 267-277; BIBL. 34 REF.Article

A TRANSIENT CAPACITANCE STUDY OF RADIATION-INDUCED DEFECTS IN ALUMINUM-DOPED SILICONLEE YH; WANG KL; JAWOROWSKI A et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 57; NO 2; PP. 697-704; ABS. GER; BIBL. 16 REF.Article

FREE CARRIER ABSORPTION IN SILICON = ABSORPTION PAR LES PORTEURS LIBRES DANS LE SILICIUMSCHRODER DK; THOMAS RN; SWARTZ JC et al.1978; I.E.E.E. J. SOLID STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 1; PP. 180-187; BIBL. 14 REF.Article

ETUDE DE LA DECOMPOSITION DES SOLUTIONS SOLIDES D'ALUMINIUM ET D'ANTIMOINE DANS LE GERMANIUMAKOPYAN RA; ABDULLAEV AA.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 10; PP. 1827-1833; BIBL. 8 REF.Article

MECANISMES D'EXCITATION DE LA PHOTOLUMINESCENCE DE MONOCRISTAUX DE SELENIURE DE ZINCKORNEVA NN; VAKSMAN YU F; SERDYUK VV et al.1980; ZH. PRIKL. SPEKTROSK.; BYS; DA. 1980; VOL. 32; NO 2; PP. 294-298; ABS. ENG; BIBL. 9 REF.Article

CALCUL PAR ORDINATEUR DU SCHEMA DES BANDES DE LUMINESCENCE DU CRISTAL ZNS: AG,AL.BIRKLE GVB; GAVRILOV FF; KITAEV GA et al.1978; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; SUN; DA. 1978; VOL. 21; NO 3; PP. 24-29; BIBL. 17 REF.Article

RECOMBINATION CENTERS IN ALUMINUM-DOPED SILICON DIFFUSED IN HIGH PHOSPHORUS CONCENTRATION.MARCHAND RL; STIVERS AR; SAH CT et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2576-2580; BIBL. 6 REF.Article

SYNTHESE DE SOLUTIONS SOLIDES PAR IMPLANTATION D'IONS AL+ ET P+ DANS GAASKUZNETSOV ON; LEZHEJKO LV; LYUBOPYTOVA EV et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 8; PP. 1449-1452; BIBL. 5 REF.Article

EFFET DOPANT DE AL2O3 OU NB2O5 SUR LA CONDUCTIVITE ELECTRIQUE DE PRODUITS DE TIO2 FRITTESTAKATA M; KIJIMA M; SUGIYAMA T et al.1976; J. CERAM. SOC. JAP.; JAP.; DA. 1976; VOL. 84; NO 5; PP. 237-241; ABS. ANGL.; BIBL. 25 REF.Article

COLLECTIVE ORDERING PHENOMENA AND INSTABILITIES OF THE 27AL NUCLEAR SPIN SYSTEM IN RUBYBOSIGER P; BRUN E; MEIER D et al.1979; PHYS. REV., A; ISSN 0556-2791; USA; DA. 1979; VOL. 20; NO 3; PP. 1073-1080; BIBL. 17 REF.Article

CHARACTERIZATION OF ELECTRON TRAPS IN ALUMINIUM-IMPLANTED SIO2.YOUNG DR; DIMARIA DJ; HUNTER WR et al.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 3; PP. 285-288; BIBL. 8 REF.Article

LOW-VOLTAGE CATHODOLUMINESCENCE OF ZNS SINGLE CRYSTALS.ODA S; AKAGI K; KUKIMOTO H et al.1978; J. LUMINESC.; NETHERL.; DA. 1978; VOL. 16; NO 3; PP. 323-330; BIBL. 5 REF.Article

STRUCTURAL AND TRAPPING CHARACTERISTICS OF A NEW AL DEFECT IN VITREOUS SILICABROWER KL.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 13; PP. 879-881; BIBL. 18 REF.Article

FINE STRUCTURE IN THE BOUND EXCITON AND MULTIPLE BOUND EXCITON LUMINESCENCE FROM ALUMINIUM-DOPED SILICON.LIGHTOWLERS EC; HENRY MO.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 9; PP. L247-L250; BIBL. 16 REF.Article

PHOTOLUMINESCENCE DUE TO AL, GA, AND B ACCEPTORS IN 4H-, 6H-, AND 3C-SIC GROWN FROM A SI MELT.SUZUKI A; MATSUNAMI H; TANAKA T et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 241-246; BIBL. 23 REF.Article

PROPRIETES ELECTROPHYSIQUES DES COUCHES DIELECTRIQUES DOPEES EN PHASE LIQUIDE PAR DES ELEMENTS DU TROISIEME GROUPEBOCHKANS P YA; VIRTMANIS AS; GRIGALE DA et al.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 2; PP. 54-57; ABS. ANGL.; BIBL. 3 REF.Article

AN EXPLANATION TO THE TEMPERATURE DEPENDENT CURVES OF THE QUADRUPOLE INTERACTION PARAMETER Q1 FOR 27A13+ IN AMMONIUM AND POTASSIUM ALUNNS.MANOOGIAN A; LECLERC A.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 81; NO 1; PP. K15-K18; BIBL. 6 REF.Article

CD(II) LINE SPECTRUM EMISSION FROM SEMICONDUCTIVE CDS SINGLE CRYSTALSMORIMOTO J; OSARA K; SOEYA T et al.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 28; NO 2; PP. 92-97; BIBL. 21 REF.Article

INFRARED ABSORPTION AND DEFECTS IN AL-DOPED ZNSEKO JS; SPITZER WG.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 5; PP. 3894-3896; BIBL. 10 REF.Article

SHARP-LINE, DONOR-ACCEPTOR PAIR RECOMBINATION LUMINESCENCE IN SI(IN, LI), SI(GA, LI), SI(AL, LI), AND SI(B, LI)ZIEMELIS UO; THEWALT MLW; PARSONS RR et al.1982; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 7; PP. 1041-1052; ABS. FRE; BIBL. 38 REF.Article

MAGNETO-RAMAN SCATTERING FROM AL ACCEPTORS IN SICSCOTT JF; TOMS DJ; LE SI DANG et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 2029-2031; BIBL. 10 REF.Article

CATHODOLUMINESCENCE SATURATION AND DECAY CHARACTERISTICS OF ZNS: CU, AL PHOSPHORKUBONIWA S; KAWAI H; HOSHINA T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1647-1653; BIBL. 17 REF.Article

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