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PROPRIETES ELECTRIQUES DE POLYCRISTAUX DE NITRURE DE BORE CUBIQUES DOPES A L'ANTIMOINESHIPILO VB; GAMEZA LM.1980; VESCI AKAD. NAVUK BSSR, SER. FIZ. TEH. NAVUK; BYS; DA. 1980; NO 2; PP. 48-51; ABS. ENG; BIBL. 4 REF.Article

SOME ANNEALING PROPERTIES OF LOW-ENERGY-ANTIMONY-IMPLANTED SILICON RESISTORSKU SM; CHU WK.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 8; PP. 719-722; BIBL. 16 REF.Article

ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF ANTIMONY DOPED TIN(IV) OXIDEBERRY FJ; MCATEER JC.1981; INORG. CHIM. ACTA; ISSN 0020-1693; ITA; DA. 1981; VOL. 50; NO 2; PP. 85-87; BIBL. 28 REF.Article

PHOTOCONDUCTIVITE D'IMPURETE DU GERMANIUM N EXACTEMENT COMPENSEKUZ'MIN GA.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 5; PP. 904-907; BIBL. 7 REF.Article

PIEZOCAPACITANCE MEASUREMENT OF PHOSPHOROUS- AND ANTIMONY-DOPED SILICON: UNIAXIAL STRAIN-DEPENDENT DONOR POLARIZABILITIESTAN HS; CASTNER TG.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 3983-3999; BIBL. 53 REF.Article

ACTIVATION OF HIGH AS AND SB CONCENTRATIONS IN SILICON BY LASER IRRADIATIONHEDLER H; ANDRA W; GOTZ G et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 73; NO 2; PP. 333-338; ABS. GER; BIBL. 11 REF.Article

RAMAN SCATTERING SPECTRA IN MIXED GA1-XALXAS(SB) CRYSTALSTALWAR DN; VANDEVYVER M; ZIGONE M et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1743-1752; BIBL. 55 REF.Article

SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH FILMSDAMODARA DAS V; JAGADEESH MS.1981; J. VAC. SCI. TECHNOL.; ISSN 0022-5355; USA; DA. 1981; VOL. 19; NO 1; PP. 89-92; BIBL. 16 REF.Article

ANNEALING CHARACTERISTICS OF TIN OXIDE FILMS PREPARED BY SPRAY PYROLYSISSHANTHI E; BANERJEE A; DUTTA V et al.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 2; PP. 237-244; BIBL. 21 REF.Article

REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALINGWHITE CW; CHRISTIE WH; APPLETON BR et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 662-664; BIBL. 11 REF.Article

ANNEALING BEHAVIOUR OF STRESS IN SB-IMPLANTED SI.ITOH N; NAKAU T; MORIKAWA Y et al.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 6; PP. 1003-1008; BIBL. 22 REF.Article

EVIDENCE FOR LOCALIZATION EFFECTS IN COMPENSATED SEMICONDUCTORSTHOMAS GA; OOTUKA Y; KATSUMOTO S et al.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 6; PP. 4288-4290; BIBL. 25 REF.Article

PROPRIETES ELECTRIQUES DE L'ARSENIURE DE GALLIUM DOPE PAR DES IMPURETES ISOVALENTES (GAAS:SB, GAAS:IN)SOLOV'EVA EV; RYTOVA NS; MIL'VIDSKIJ MG et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2141-2146; BIBL. 7 REF.Article

ETUDE DE LA DECOMPOSITION DES SOLUTIONS SOLIDES D'ALUMINIUM ET D'ANTIMOINE DANS LE GERMANIUMAKOPYAN RA; ABDULLAEV AA.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 10; PP. 1827-1833; BIBL. 8 REF.Article

TEMPERATURE DEPENDENCE OF THE ELECTRIC QUADRUPOLE INTERACTION OF 120SB AND 115TE IN SN.IVANOV EA; VAJDA S; IORDACHESCU A et al.1977; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1977; VOL. 22; NO 8; PP. 879Article

EHD-PHOTOLUMINESCENCE KINETICS IN DOPED GE.ZHURKIN BG; KARUZKII AL; STRAKOV VP et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 3; PP. 207-209; BIBL. 18 REF.Article

INTERACTIONS MAGNETIQUES HYPERFINES POUR LES ATOMES D'IMPURETE 121SB5+ DANS FEF3.FABRITCHNYI PB; DANOT M; ONOUTCHAK VN et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 8; PP. 1017-1019; ABS. ANGL.; BIBL. 9 REF.Article

FACTEUR G EFFECTIF DES TROUS DANS LES ALLIAGES SEMI-METALLIQUES BISMUTH-ANTIMOINECHUDINOV SM; AKIMOV BA; MOSHCHALKOV VV et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 8; PP. 2301-2305; BIBL. 3 REF.Article

MAGNETIC FIELD DEPENDENCE OF ACOUSTIC ATTENUATION IN UNIAXIALLY COMPRESSED SB DOPED GEMIYASATO T; TOKUMURA M; TOGUCHI M et al.1980; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1980; VOL. 49; NO 6; PP. 2219-2226; BIBL. 19 REF.Article

THE LOW-FREQUENCY, LOW-TEMPERATURE DIELECTRIC BEHAVIOR OF N-TYPE GERMANIUM BELOW THE INSULATOR-METAL TRANSITIONCASTNER TG; LEE NK; TAN HS et al.1980; J. LOW TEMP. PHYS.; ISSN 0022-2291; USA; DA. 1980; VOL. 38; NO 3-4; PP. 447-473; BIBL. 44 REF.Article

CONDUCTIVITE ET MOBILITE DE HALL DANS LE GERMANIUM FAIBLEMENT DOPE, COMPENSE PAR DES REGIONS DESORDONNEESEVSEEV VA; KONOPLEVA RF; SHIK A YA et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 3; PP. 510-514; BIBL. 12 REF.Article

LOCAL ORDER DEPENDENT IMPURITY LEVELS IN ALLOY SEMICONDUCTORSGONCALVES DA SILVA CET.1981; REV. BRAS. FIS.; ISSN 0374-4922; BRA; DA. 1981; VOL. 11; NO 1; PP. 231-245; ABS. POR; BIBL. 14 REF.Article

ON THE THERMOLUMINESCENCE OF SB-DOPED CALCIUM FLUOROPHOSPHATEJAYAPRAKASH R; RATNAM VV.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 1; PP. 147-152; ABS. GER; BIBL. 7 REF.Article

SPECTRE D'ENERGIE DE CERTAINES IMPURETES DANS LES SOLUTIONS SOLIDES DU SYSTEME GE-SIBAJDAKOVA AP; BELOKUROVA IN; DEGTYAREV VF et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 11; PP. 1951-1953; BIBL. 8 REF.Article

ORIGINS OF VERY SHALLOW PHOTOCONDUCTION IN GE:SBSCHIFF EA.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 12; PP. 991-993; BIBL. 8 REF.Article

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