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PHOTOLUMINESCENCE OF CARBON-IMPLANTED GAASSTRINGFELLOW GB; KOSCHEL W; BRIONES F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 8; PP. 581-582; BIBL. 5 REF.Article

MOLECULAR IONS AND ELECTRON TRANSPORT IN RARE GAS LATTICES: C2- FORMATION MECHANISM AND X2SIGMA +G<->B2SIGMA U+ SPECTROSCOPY.BRUS LE; BONDYBEY VE.1975; J. CHEM. PHYS.; U.S.A.; DA. 1975; VOL. 63; NO 7; PP. 3123-3129; BIBL. 29 REF.Article

POSITRON TRAPPING AND DETRAPPING FROM DISLOCATION-LIKE DEFECTS IN THE PRE-VACANCY REGION IN IRONSEGERS D; DE SCHEPPER L; DORIKENS M et al.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 89; NO 7; PP. 347-350; BIBL. 11 REF.Article

HARD CONDUCTING IMPLANTED DIAMOND LAYERS.HAUSER JJ; PATEL JR; RODGERS JW et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 3; PP. 129-130; BIBL. 6 REF.Article

PHOTOLUMINESCENCE FROM CARBON AND OXYGEN IMPLANTED SI.KIRKPATRICK CG; MYERS DR; STREETMAN BG et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 175-179; BIBL. 15 REF.Article

LOW TEMPERATURE PHOTOLUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAASBRIONES F; COLLINS DM.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 847-866; BIBL. 16 REF.Article

DUAL IMPLANTATION OF C+ AND GA+ IONS INTO GAAS.SHIN BK; EHRET JE; PARK YS et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2988-2990; BIBL. 13 REF.Article

AN OPTICAL STUDY OF DEFECTS IN SILICON IRRADIATED WITH FAST NEUTRONS.NEWMAN RC; TOTTERDELL DHJ.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 22; PP. 3944-3954; BIBL. 34 REF.Article

INFRARED ABSORPTION OF AMORPHOUS BORON FILMS CONTAINING CARBON AND HYDROGEN.BLUM NA; FELDMAN C; SATKIEWICZ FG et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. 481-486; ABS. FR.; BIBL. 21 REF.Article

INFLUENCE OF CARBON ON OXYGEN BEHAVIOR IN SILICONLEROUEILLE J.1981; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 57; NO 1; PP. 177-181; ABS. FRE; BIBL. 12 REF.Article

INFLUENCE DE L'ABRASION IONIQUE SUR LA POSITION DU PIC 1S DU CARBONE DE CONTAMINATION EN SPECTROMETRIE DE PHOTOELECTONSJAEGLE A; KALT A; NANSE G et al.1981; ANALUSIS; ISSN 0365-4877; FRA; DA. 1981; VOL. 9; NO 5; PP. 252-257; ABS. ENG; BIBL. 19 REF.Article

PROPRIETES ELECTROPHYSIQUES DES COUCHES DE SIO2 CONTENANT DU CARBONEBELYAKOVA OI; VIRTMANIS AS; ZHAGATA LA et al.1975; LATV. P.S.R. ZINAT. AKAD. VEST. FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1975; NO 2; PP. 41-44; ABS. ANGL.; BIBL. 8 REF.Article

THE ORIGIN OF MO2C PRECIPITATE MORPHOLOGY IN MOBYBDENUMLANG JM; DAHMEN U; WESTMACOTT KH et al.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. 409-420; ABS. GER; BIBL. 26 REF.Article

A QUANTITATIVE MODEL FOR CARBON INCORPORATION IN CZOCHRALSKI SILICON MELTSCARLBERG T.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 168-171; BIBL. 17 REF.Article

THERMODYNAMICS OF NICKEL-CARBON SOLID SOLUTIONSMCLELLAN RB; YOSHIHARA M.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 5; PP. 445-446; BIBL. 12 REF.Article

MAGNETIC RELAXATION OCCURRING IN LOW-TEMPERATURE ELECTRON-IRRADIATED ALPHA -FE AFTER ANNEALING ABOVE STAGE III (220 K)WALZ F; BLYTHE HJ; KRONMUELLER H et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 607-618; ABS. GER; BIBL. 44 REF.Article

OBSERVATION OF LOCALIZED VIBRATIONAL MODE ABSORPTION OF CARBON-IMPLANTED GAAS AND EFFECTS OF ANNEALING TEMPERATUREKREITMAN MM; FARMER JW; BAJAJ KK et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 7; PP. 553-555; BIBL. 7 REF.Article

EVIDENCE FOR SHAKEUP SATELLITES DUE TO SURFACE CONTAMINATION IN ARSENIC METAL AND ITS COMPOUNDS.BAHL MK; WATSON RL.1976; SURF. SCI.; NETHERL.; DA. 1976; VOL. 54; NO 3; PP. 540-546; BIBL. 12 REF.Article

CARBON IN MOLECULAR BEAM EPITAXIAL GAASSTRINGFELLOW GB; STALL R; KOSCHEL W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 156-157; BIBL. 10 REF.Article

MAGNETIC PERMEABILITY DISACCOMMODATION IN ALPHA -FE-C TYPE ALLOYS CONTAINING S-I PAIRS II. APPLICATION TO ALPHA -FE-V-C ALLOYSKUSKA R; MORON JW.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 431-438; ABS. GER; BIBL. 7 REF.Article

NATURE OF THE 0. 111 EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICONBARON R; BAUKUS JP; ALLEN SD et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 257-259; BIBL. 18 REF.Article

SOLUBILITE DE L'OXYGENE DANS LES ALLIAGES DU FER AU COURS DE LEUR REFROIDISSEMENT ET DE LEUR CRISTALLISATION. 2. SYSTEME FE-C-OROMANOV AA; VATOLIN NA.1979; ZH. FIZ. KHIM.; SUN; DA. 1979; VOL. 53; NO 7; PP. 1856-1859; BIBL. 4 REF.Article

SUPPRESSION EFFECT UPON OXYGEN PRECIPITATION IN SILICON BY CARBON FOR A TWO-STEP THERMAL ANNEALOGINO M.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 847-849; BIBL. 14 REF.Article

THERMALLY-INDUCED DEFECTS IN SILICON CONTAINING OXYGEN AND CARBONMINAEV NS; MUDRYI AV.1981; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1981; VOL. 68; NO 2; PP. 561-565; ABS. RUS; BIBL. 21 REF.Article

DETERMINATION OF THE DIELECTRIC CONSTANT OF GAP FROM S-C DONOR-ACCEPTOR PAIR SPECTRABINDEMANN R; HEMPEL E; KREHER K et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 2; PP. K201-K203; BIBL. 6 REF.Article

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