LOW TEMPERATURE PHOTOLUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAASBRIONES F; COLLINS DM.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 847-866; BIBL. 16 REF.Article

DUAL IMPLANTATION OF C⁺ AND GA⁺ IONS INTO GAAS.SHIN BK; EHRET JE; PARK YS et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2988-2990; BIBL. 13 REF.Article

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CARBON IN MOLECULAR BEAM EPITAXIAL GAASSTRINGFELLOW GB; STALL R; KOSCHEL W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 156-157; BIBL. 10 REF.Article

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INFRARED ABSORPTION OF VARIOUS ISOLATED IMPURITIES IN GA AS.BELLOMONTE L.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 1; PP. 59-64; BIBL. 24 REF.Article

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MAGNETISCHE HOCHTEMPERATURNACHWIRKUNG IN EISEN. = EFFET DE TRAINAGE MAGNETIQUE A HAUTE TEMPERATURE DANS LE FERKUKE A; KRONMULLER H; SCHULTZ H et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 2; PP. 523-533; ABS. ANGL.; BIBL. 29 REF.Article

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EINFLUSS VON NIOBZUSAETZEN AUF DIE LOESLICHKEITSGRENZE VON KOHLENSTOFF IN MOLYBDAEN = INFLUENCE DE L'ADDITION DU NIOBIUM SUR LA LIMITE DE SOLUBILITE DU CARBONE DANS LE MOLYBDENESCHULZE K; HYUNG JIN KIM; JEHN H et al.1981; Z. METALLKD.; ISSN 0044-3093; DEU; DA. 1981; VOL. 72; NO 7; PP. 490-494; ABS. ENG; BIBL. 14 REF.Article

EFFECT OF AGING AFTER CARBON DOPING ON THE DUCTILITY OF MOLYBDENUMHIRAOKA Y; OKADA M; WATANABE R et al.1980; J. LESS-COMMON MET.; ISSN 0022-5088; CHE; DA. 1980; VOL. 75; NO 1; PP. 31-42; BIBL. 13 REF.Article

INFLUENCE DE LA DEFORMATION PLASTIQUE SUR L'ETAT ELECTRONIQUE DES ATOMES DE NIOBIUM DANS L'ALLIAGE NB-ZR-CARKHAROV VI; DAROVSKIKH EG; SAMOJLENKO ZA et al.1979; DOKL. AKAD. NAUK S.S.S.R.; SUN; DA. 1979; VOL. 246; NO 4; PP. 859-861; BIBL. 6 REF.Article

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EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON.LEE YH; CORBETT JW; BROWER KL et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. 637-647; ABS. ALLEM.; BIBL. 31 REF.Article

SHALLOW ACCEPTOR BINDING ENERGY AND LIFETIME OF DONOR-ACCEPTOR PAIRS IN GALLIUM ARSENIDE.KAMIYA T; WAGNER E.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3219-3223; BIBL. 32 REF.Article

SPECTROSCOPY OF EXCITED ACCEPTOR STATES IN GAP.STREET RA; SENSKE W.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 19; PP. 1292-1295; BIBL. 14 REF.Article

ETUDE DE LA STRUCTURE ELECTRONIQUE DES IMPURETES INTERSTITIELLES DANS LES METAUX DE TRANSITIONS.CADEVILLE MC; GAUTIER F.1975; DGRST-7270363; FR.; DA. 1975; PP. (21P.); BIBL. 4 REF.; (RAPP. FINAL, ACTION CONCERTEE: METALL.)Report

HOST ISOTOPE FINE STRUCTURE OF LOCAL MODES: C AND SI IN GAASLEIGH RS; NEWMAN RC.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 30; PP. L1045-L1051; BIBL. 19 REF.Article