ENHANCEMENT OF THE DONOR ACTIVITY OF IMPLANTED SELENIUM IN GAAS BY GALLIUM IMPLANTATION.WOODCOCK JM.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 4; PP. 226-227; BIBL. 7 REF.Article

VOLTAGE AND FREQUENCY DEPENDENCE OF SPECTRAL DISTRIBUTION AND ELECTROLUMINESCENT BRIGHTNESS OF (ZN,CD,HG) S:CU, GA, IN LUMINOPHOR.MAHESHWARI RC; KHAN MH.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 11; PP. 732-735; BIBL. 14 REF.Article

SUPPRESSION DE L'EFFET STAEBLER-WRONSKI DANS LE SILICIUM HYDROGENE AMORPHE DANS LE CAS D'IMPLANTATION IONIQUE DU GALLIUM ET DE L'ARSENICAKIMCHENKO IP; VAVILOV VS; DYMOVA NN et al.1981; PIS'MA ZH. EKSPER. TEOR. FIZ.; SUN; DA. 1981; VOL. 33; NO 9; PP. 448-451; BIBL. 5 REF.Article

SELF-ACTIVATED EMISSION IN CDS.SUSA N; WATANABE H; WADA M et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 10; PP. 2463-2464; BIBL. 5 REF.Article

THE ORIGIN OF THE OPTICAL ABSORPTION BANDS OF GA⁺ AND GA²⁺ IN MGOMORENO M.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 3; PP. 221-222; BIBL. 15 REF.Article

APPLICABILITY OF SCALING LAWS FOR SUPERCONDUCTING CRITICAL CURRENTS IN PSEUDO-BINARIES BASED ON NB₃GEALTEROVITZ SA; WOOLLAM JA.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 4; PP. 419-422; BIBL. 9 REF.Article

FINE STRUCTURE OF THE LUMINESCENCE FROM EXCITONS AND MULTIEXCITON COMPLEXES BOUND TO ACCEPTORS IN SI.THEWALT MLW.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 9; PP. 521-524; BIBL. 15 REF.Article

AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUMLINARES LC; LI SS.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 601-608; BIBL. 50 REF.Article

OPTICAL ABSORPTION AND MAGNETIC CIRCULAR DICHROISM IN THE A AND B BANDS OF KC1:GA⁺JACOBS PWM; STILLMAN MJ; OYAMA GANNON K et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 32; PP. 6033-6047; BIBL. 19 REF.Article

INFRARED SPECTRA OF NEW ACCEPTOR LEVELS IN BORON-DOPED AND GALLIUM-DOPED SILICONSCOTT W; JONES CE.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7258-7260; BIBL. 14 REF.Article

DUAL IMPLANTATION OF C⁺ AND GA⁺ IONS INTO GAAS.SHIN BK; EHRET JE; PARK YS et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2988-2990; BIBL. 13 REF.Article

THE DEFECT STRUCTURE OF ZNSE: GARAY AK; KROGER FA.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 8; PP. 1355-1361; BIBL. 21 REF.Article

PHOTOLUMINESCENCE DUE TO AL, GA, AND B ACCEPTORS IN 4H-, 6H-, AND 3C-SIC GROWN FROM A SI MELT.SUZUKI A; MATSUNAMI H; TANAKA T et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 241-246; BIBL. 23 REF.Article

PROPRIETES ELECTROPHYSIQUES DES COUCHES DIELECTRIQUES DOPEES EN PHASE LIQUIDE PAR DES ELEMENTS DU TROISIEME GROUPEBOCHKANS P YA; VIRTMANIS AS; GRIGALE DA et al.1977; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1977; NO 2; PP. 54-57; ABS. ANGL.; BIBL. 3 REF.Article

CHANNELING INVESTIGATION OF THE DIFFUSION BEHAVIOUR OF GA ATOMS IMPLANTED INTO HEAVILY DOMAGED SILICONFIDERKIEWICZ A; GOLANSKI A; KRYNICKI J et al.1978; NUKLEONIKA; POL; DA. 1978; VOL. 23; NO 10; PP. 985-990; ABS. POL/RUS; BIBL. 7 REF.Article

CATHODOLUMINESCENCE ON THE DIFFUSION FRONT OF CDS DOPED WITH TRIVALENT METALS.MYKURA H.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 5; PP. 779-790; H.T. 1; BIBL. 11 REF.Article

ETATS DE L'IMPURETE GA ET PHENOMENES PHOTOELECTRIQUES DANS PBTE(GA)AKIMOV BA; BRANDT NB; GAS'KOV AM et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 87-92; BIBL. 11 REF.Article

LUMINESCENCE OF TRAPS IN ELECTRON-IRRADIATED GALLIUM-DOPED SILICONELLIOTT KR.1982; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 2; PP. 1460-1463; BIBL. 6 REF.Article

EPR-SPECTRA OF GA-DOPED RUTILE (TIO₂)ZWINGEL D.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 11; PP. 775-777; BIBL. 6 REF.Article

INFLUENCE D'UNE COMPRESSION HYDROSTATIQUE SUR LES PROPRIETES ELECTRIQUES DE PB_1-XGE_XTE CONTENANT L'IMPURETE GAAVERKIN AA; BUSHMARINA GS; DRABKIN MA et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 11; PP. 2219-2223; BIBL. 11 REF.Article

PHOTOLUMINESCENCE OF ZNSE SINGLE CRYSTALS DIFFUSED WITH A GROUP-III ELEMENT.YAMAGUCHI M; YAMAMOTO A; KONDO M et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5237-5244; BIBL. 21 REF.Article

VACUUM TIGHT QUARTZ AMPOULE FOR BRIDGMAN GROWTH OF CRYSTALS WITH INTERFACE DEMARCATIONCROUCH RK; DEBNAM WJ.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 56; NO 1; PP. 215-216; BIBL. 1 REF.Article

DISTRIBUTION DES IMPURETES DANS LES COUCHES EPITAXIQUES DE SILICIUM OBTENUES PAR LA METHODE DE PYROLYSE DU SILANEGRANKOV IV; GUREVICH VM; IVANOV LS et al.1982; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 3; PP. 341-344; BIBL. 6 REF.Article

POLARISABILITES ET MOMENTS QUADRIPOLAIRES D'IMPURETES DU GROUPE III DANS LE GERMANIUMPOLUPANOV AF.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 1; PP. 27-30; BIBL. 11 REF.Article

DETERMINATION DU DEGRE DE COMPENSATION DANS UN GERMANIUM DOPE PAR TRANSMUTATIONBEDA AG; VAJNBERG VV; VOROBKALO FM et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 8; PP. 1546-1549; BIBL. 10 REF.Article