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CARACTERISTIQUES V-A SOUS-LINEAIRES DE STRUCTURES LONGUES N+-NI-N+ EN SILICIUM N DOPE PAR L'ORBYKOVSKIJ YU A; ZUEV VV; KIRYUKHIN AD et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2184-2187; BIBL. 7 REF.Article

THE SOLID SOLUBILITY OF GOLD IN DOPED SILICON BY OXIDE ENCAPSULATION.O'SHAUGHNESSY TA; BARBER HD; THOMPSON DA et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 10; PP. 1350-1354; BIBL. 26 REF.Article

SPREADING RESISTANCE CALIBRATION FOR GALLIUM-OR ALUMINIUM-DOPED SILICONEHRSTEIN JR.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 6; PP. 1403-1404; BIBL. 6 REF.Article

EFFECT OF COMPOSITION AND THERMAL TREATMENT ON THE YIELD STRESS AND RESISTIVITY OF PB(AU)YAVARI AR; TURNBULL D.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 6; PP. 1171-1176; ABS. FRE/GER; BIBL. 11 REF.Article

CALCULATION OF THE A BAND SHAPE IN KCL:AU- IN THE D-MODE MODELMURAMATSU S; SAKAMOTO N.1979; PHYS. STATUS SOLIDI, B; DDR; DA. 1979; VOL. 91; NO 2; PP. K87-K90; BIBL. 8 REF.Article

THE DEGENERACY FACTOR OF THE GOLD ACCEPTOR LEVEL IN SILICON.RALPH HI.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 672-675; BIBL. 14 REF.Article

INFLUENCE DES IMPURETES AG ET AU SUR LES PROPRIETES ELECTRONIQUES DE LA SURFACE DU SILICIUMMILENIN VV; POLUDIN VI; PRIMACHENKO VE et al.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 4; PP. 616-620; ABS. ANGL.; BIBL. 8 REF.Article

ELECTROLUMINESCENCE OF CAOIAG AND CAOIAUKHARE RP.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 56; NO 2; PP. K97-K99; BIBL. 3 REF.Article

SOLUBILITY OF GOLD IN P-TYPE SILICON.BROWN M; JONES CL; WILLOUGHBY AFW et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 763-770; BIBL. 37 REF.Article

STUDY OF THE ENHANCED SOLUBILITY AND LATTICE LOCATION OF GOLD IMPURITIES IN A HEAVILY PHOSPHORUS-DIFFUSED LAYER OF SILICON.CHOU SL; GIBBONS JF.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 3; PP. 1197-1203; BIBL. 32 REF.Article

DETERMINATION OF THE TEMPERATURE INDEPENDENCE OF THE CAPTURE CROSS-SECTION OF THE GOLD ACCEPTOR LEVEL FOR ELECTRONS IN N-TYPE SILICON.KASSING R; KAEHLER E; DUDECK I et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 141-146; ABS. ALLEM.; BIBL. 12 REF.Article

ELECTRONIC STRUCTURE OF AU+ SUBSTITUTIONAL IMPURITY IN KCL: OPTICAL ABSORPTION BAND MEASUREMENTS AND A MOLECULAR CLUSTER MODEL INTERPRETATIONRIBEIRO GM; FRANCO BJO; ALVES JLA et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 29; PP. L809-L814; BIBL. 20 REF.Article

MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SIGALVIN GJ; THOMPSON MO; MAYER JW et al.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982 PUBL. 1981; VOL. 48; NO 1; PP. 33-36; BIBL. 12 REF.Article

AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND GAP SEMICONDUCTORSHAUG A.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. 443-448; BIBL. 20 REF.Article

EPR OF AU0 ATOMS IN NACL CRYSTALS.BARANOV PG; ZHITNIKOV RA; KHRAMTSOV VA et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 2; PP. K109-K112; BIBL. 11 REF.Article

PROPRIETES D'UNE SURFACE DE SILICIUM DOPEE PAR L'ORGREKHOV IV; OSTROUMOVA EV.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 12; PP. 2233-2237; BIBL. 10 REF.Article

ATOMIC TRANSPORT OF GOLD AND SILVER IN LEAD IN A DC FIELD.HERZIG C; STRACKE E.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 27; NO 1; PP. 75-84; ABS. ALLEM.; BIBL. 27 REF.Article

MOESSBAUER STUDY OF TRANSITION METAL IMPURITIES IN HYDROGEN-LOADED PALLADIUM.IANNARELLA L; DANON J; WAGNER FE et al.1974; NOTAS FIS.; BRAS.; DA. 1974; VOL. 23; NO 13; PP. 233-239; BIBL. 10 REF.Serial Issue

HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICONPEARTON SJ; TAVENDALE AJ.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 7105-7108; BIBL. 19 REF.Article

A COMPARISON OF THE PERFORMANCE OF GOLD AND PLATINUM KILLED POWER DIODESBROTHERTON SD; BRADLEY P.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 119-125; BIBL. 16 REF.Article

CONDUCTIVITE PAR SAUTS DU GERMANIUM DOPE PAR L'OR APRES IRRADIATION PAR LES QUANTUMS GAMMA DE 60CO A 77 KDOBREGO VP; KOLYADKO AV; MAKUSHOK YU E et al.1982; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 301-304; BIBL. 6 REF.Article

EVIDENCE FOR CRYSTAL-FIELD SPLITTING OF THE 3P2 STATE IN KCL:AU-LEMOYNE D.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 33; PP. 6189-6195; BIBL. 14 REF.Article

PHOTOELECTRONIC INVESTIGATIONS OF MULTI-LEVEL GOLD CENTRES IN GE:SB:AU.PLESIEWICZ W.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. 403-409; ABS. ALLEM.; BIBL. 18 REF.Article

PHOTOCONDUCTIVITE NEGATIVE DU GERMANIUM COMPENSE PAR L'ORBUMELENE S; KLIMKA L; KAL'VENAS S et al.1976; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1976; VOL. 16; NO 5; PP. 715-722; ABS. LITUANIEN ANGL.; BIBL. 9 REF.Article

THE ELECTROMIGRATION OF GOLD IN GLASSAY AS2SE3.SUPTITZ P; TELTOW J; LEBEDEV EA et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 31-36; ABS. ALLEM.; BIBL. 5 REF.Article

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