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LUMINESCENCE OF O ATOMS IN SOLID N2 STIMULATED BY LOW ENERGY ELECTRONSSAYER RJ; PRINCE RH; DULEY WW et al.1981; PROC. R. SOC. LOND., SER. A, MATH. PHYS. SCI.; ISSN 0080-4630; GBR; DA. 1981; VOL. 373; NO 1755; PP. 477-490; BIBL. 21 REF.Article

SOLUBILITE DE L'OXYGENE DANS LE NIOBIUM LIQUIDEKOZINA LN; REVYAKIN AV; ROMANOVA VP et al.1975; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1975; NO 3; PP. 28-33; BIBL. 7 REF.Article

ACTION REVERSIBLE DE L'OXYGENE SUR LES PROPRIETES THERMOELECTRIQUES DE LA PHTALOCYANINE DE PLOMBASANOV AN; VARTANYAN AT.1981; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1981; VOL. 55; NO 11; PP. 2965-2967; BIBL. 9 REF.Article

INFLUENCE DE L'IMPURETE OXYGENE SUR LES PROPRIETES DE LUMINESCENCE DES CRISTAUX D'IODURE DE SODIUMGLOSKOVSKAYA NK; KHARAMBURA SB.1975; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1975; VOL. 20; NO 8; PP. 1354-1358; ABS. ANGL.; BIBL. 7 REF.Article

EXPERIMENTAL RESULTS ON THE OFF CENTER O- ION IN KI CRYSTALS.BILL H.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 10; PP. 1209-1213; BIBL. 9 REF.Article

UNE NOUVELLE BANDE L'ABSORPTION DU COMPLEXE SI-O-SI DANS LE SILICIUMIL'IN MA.1981; OPT. SPEKTROSK.; ISSN 0030-4034; USA; DA. 1981; VOL. 51; NO 2; PP. 212-214; BIBL. 2 REF.Article

EVALUATION DE L'HOMOGENEITE DES MATERIAUX SEMI-CONDUCTEURS, A L'AIDE D'UN ADAPTATEUR POUR SPECTROPHOTOMETRE A INFRA-ROUGESLEVIN NB; IL'IN MA; RASHEVSKAYA EP et al.1979; CVETN. MET.; ISSN 0372-2929; SUN; DA. 1979; NO 10; PP. 63; BIBL. 5 REF.Article

LA MAGNETORESISTANCE ANORMALEMENT GRANDE DES CRISTAUX DE GE N SANS DISLOCATION ENRICHIS EN IMPURETE OXYGENEBABICH VM; BARANSKIJ PI; IL'CHISHIN VA et al.1976; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1976; VOL. 10; NO 9; PP. 1735-1738; BIBL. 9 REF.Article

GETTERING OF OXYGEN IN SI WAFERS DAMAGED BY ION IMPLANTATION AND MECHANICAL ABRASIONMIKKELSEN JC JR.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 695-697; BIBL. 16 REF.Article

INFLUENCE OF OXYGEN ON SILICON RESISTIVITYCAZCARRA V; ZUNINO P.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4206-4211; BIBL. 10 REF.Article

INFLUENCE D'UN ECLAIREMENT AUXILIAIRE EXTRINSEQUE SUR LA LUMINESCENCE DE GAP DOPE PAR ZN, ONECHAEV VM; POLTORATSKIJ EH A; SURIS RA et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 129-132; BIBL. 8 REF.Article

INFLUENCE D'UN TRAITEMENT THERMIQUE ET D'UNE IRRADIATION SUR L'ETAT DE L'OXYGENE DANS LE SILICIUMKOMALEEVA FN; MORDKOVICH VN; TEMPER EH M et al.1976; FIZ. TEKH. POLUPROVOD.; S.S.S.R.; DA. 1976; VOL. 10; NO 2; PP. 320-323; BIBL. 5 REF.Article

EPR STUDY OF OXYGEN CENTERS IN ALN:OARCHANGELSKII GE; FOCK MV; PACESOVA SI et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. K117-K122; BIBL. 8 REF.Article

IMPURITIES AND THE STATIC CENTRAL PEAK IN LEAD GERMANATETAYLOR W; LOCKWOOD DJ; VASS H et al.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 5; PP. 547-550; BIBL. 12 REF.Article

FORME DES SPECTRES D'ABSORPTION ET DE LUMINESCENCE DES CENTRES PROFONDS DANS LES SEMICONDUCTEURS (OXYGENE DANS LE PHOSPHURE DE GALLIUM)KOPYLOV AA; PIKHTIN AN.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 12; PP. 2398-2404; BIBL. 17 REF.Article

DETERMINATION OF THE OXYGEN PRECIPITATE-FREE ZONE WIDTH IN SILICON WAFERS FROM SURFACE PHOTOVOLTAGE MEASUREMENTSCHAPPELL TI; CHYE PW; TAVEL MA et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 33-36; BIBL. 11 REF.Article

MECANISME DE L'INFLUENCE DE L'OXYGENE SUR L'EMISSION IONIQUE SECONDAIRE DU TANTALEDOROZHKIN AA; KOVARSKIJ AP.1981; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1981; VOL. 51; NO 4; PP. 833-835; BIBL. 7 REF.Article

PHOTOCONDUCTIVITY ANALYSIS OF CHROMIUM AND OXYGEN-RELATED LEVELS IN SEMI-INSULATING GAASOKUMURA T; ITOH Y; IKOMA T et al.1979; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1979; VOL. 8; NO 6; PP. 865-877; BIBL. 16 REF.Article

EXTRINSIC PHOTOCONDUCTIVITY IN HIGH-RESISTIVITY GAAS DOPED WITH OXYGEN.TYLER EH; JAROS M; PENCHINA CM et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 208-210; BIBL. 18 REF.Article

PHOTOLUMINESCENCE FROM CARBON AND OXYGEN IMPLANTED SI.KIRKPATRICK CG; MYERS DR; STREETMAN BG et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 31; NO 3; PP. 175-179; BIBL. 15 REF.Article

ETUDE DES EFFETS DE L'OXYGENE SUR L'EMISSION D'IMPURETES A LA SURFACE THERMOIONIQUE DU PLATINEREKOVA LP; MOZGIN VV; ZVYAGINTSEVA LN et al.1975; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1975; VOL. 45; NO 3; PP. 616-623; BIBL. 11 REF.Article

SECONDARY ELECTRON EMISSION FROM THE GANICS-O SURFACE.MARTINELLI RU; PANKOVE JI.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 10; PP. 549-551; BIBL. 27 REF.Article

VUV ABSORPTION SPECTRA OF OXYGENATED CAF2 CRYSTALSRAUCH R; LIEBOLD E.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K165-K168; BIBL. 8 REF.Article

DIFFUSION LIMITED PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICONBINNS MJ; BROWN WP; WILKES JG et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 6; PP. 525-527; BIBL. 16 REF.Article

EPR INVESTIGATION ON AN O3- CENTER IN SRCL2DE SIEBENTHAL JM; BILL H.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 87; NO 1; PP. 40-44; BIBL. 15 REF.Article

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