Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("IMPURETE PEU PROFONDE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 514

  • Page / 21
Export

Selection :

  • and

SHALLOW DONORS IN HE-COOLED SEMICONDUCTORS USED FOR DETECTION AND FREE PATH DETERMINATION OF SINGLE PHONONSRIEHL N; BAUR G; MULLER A et al.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 453-456; ABS. ALLEM.; BIBL. 4 REF.Serial Issue

A COMPARISON BETWEEN SELENIUM MASS-TRANSPORTED AND SELENIUM-DIFFUSED SILICONSKARSTAM B; LENNART LINDSTROM J.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 6; PP. 488-490; BIBL. 17 REF.Article

PSEUDOPOTENTIAL THEORY OF SHALLOW-DONORE GROUND STATES. II.SCHECHTER D.1975; PHYS. REV.; U.S.A.; DA. 1975; VOL. 11; NO 12; PP. 5043-5052; BIBL. 36 REF.Article

EXCITED STATES OF A SHALLOW ACCEPTOR IN SEMICONDUCTING DIAMOND FROM PHOTOCONDUCTIVITY SPECTRABASHENOV VK; GONTAR AG; PETUKHOV AG et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. K139-K142; BIBL. 11 REF.Article

EFFET PHOTOGALVANIQUE DANS UN MODELE DE CENTRES D'IMPURETE PEU PROFONDSSTURMAN BI.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 10; PP. 3084-3090; BIBL. 12 REF.Article

THEORY OF DOPING OF AMORPHOUS TETRAHEDRALY BONDED SEMICONDUCTORSROBERTSON J.1979; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1979; VOL. 40; NO 1; PP. 31-49; BIBL. 2 P.Article

IONIZATION ENERGIES OF IMPURITY ATOMS IN SI AND GE.CHAHOUD J; DONZELLI O; FERRARI L et al.1976; LETTERE NUOVO CIMENTO; ITAL.; DA. 1976; VOL. 15; NO 8; PP. 254-256; BIBL. 3 REF.Article

SPECTROSCOPIC EVIDENCE FOR THE INTERACTION BETWEEN SHALLOW HYDROGENIC DONORS IN GAAS, INP AND CDTE.BAJAJ KK; BIRCH JR; EAVES L et al.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 4; PP. 530-540; BIBL. 18 REF.Article

STRESS EFFECTS ON EXCITONS BOUND TO SHALLOW ACCEPTORS IN GAAS.SCHMIDT M; MORGAN TN; SCHAIRER W et al.1975; PHYS. REV.; U.S.A.; DA. 1975; VOL. 11; NO 12; PP. 5002-5007; BIBL. 10 REF.Article

SHALLOW IMPURITY STATES IN SEMICONDUCTORS: ABSORPTION CROSS-SECTIONS, EXCITATION RATES, AND CAPTURE CROSS-SECTIONS.ANDERSON WW.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 235-245; BIBL. 31 REF.Article

SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENTOHMURA Y; ZOHTA Y; KANAZAWA M et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 1; PP. 93-98; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

PHOTOLUMINESCENCE STUDY OF THE SHALLOW ACCEPTOR STATES IN N-TYPE GAAS.BOIS D; BEAUDET D.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3882-3884; BIBL. 20 REF.Article

CHEMICAL SHIFT PARAMETERS FOR SHALLOW DONORS IN SEMICONDUCTORSHALE EB.1973; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1973; VOL. 34; NO 4; PP. 621-629; BIBL. 33 REF.Serial Issue

THE SCREENING INFLUENCE OF THE CONDUCTION ELECTRONS ON THE SHALLOW DONOR LEVELS IN N-TYPE GAAS.HRIVNAK L.1976; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1976; VOL. 26; NO 6; PP. 670-676; BIBL. 20 REF.Article

APPLICATION DE LA SATURATION EN IMPULSIONS A LA MESURE DES PARAMETRES CARACTERISTIQUES DES RAIES DE RPE DES DONNEURS A ELARGISSEMENT NON HOMOGENE DANS LES SEMICONDUCTEURSSEMENOV IT; FOGEL'SON MS.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1925-1929; BIBL. 11 REF.Article

EXCITATION SPECTRA OF SHALLOW DONORS IN GAP.SCOTT W.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3173-3175; BIBL. 20 REF.Article

GRAPHIC REPRESENTATION OF THE GROUND STATE WAVE-FUNCTIONS OF THE SHALLOW ACCEPTOR IN GERMINIUMCHROBOCZEK JA; MCINNES JA.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 1; PP. L17-L20; BIBL. 2 REF.Article

UNIAXIAL STRAIN-DEPENDENT SHALLOW DONOR POLARIZABILITIES. II: A NEW MANY-VALLEY THEORETICAL FORMULATIONCASTNER TG; TAN HS.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 4000-4012; BIBL. 24 REF.Article

DISPOSITIF POUR LA MESURE AUTOMATIQUE DU PROFIL DE CONCENTRATION DES NIVEAUX PEU PROFONDSORLOV OM; PRINTS V YA; SKOK EH M et al.1979; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1979; NO 4; PP. 258-261; BIBL. 10 REF.Article

IONISATION PAR CHOCS DES ETATS EXCITES D'IMPURETES PEU PROFONDES ET ECHAUFFEMENT DU GAZ D'ELECTRONS DANS LE GERMANIUM ET LE SILICIUMKURKOVA EA; SIDOROV VI.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1286-1292; BIBL. 9 REF.Article

RELAXATION SPIN-RESEAU DE L'EXCITATION TRIPLET LOCALE DES CENTRES D'IMPURETE PEU PROFONDS DANS LES CRISTAUX MOLECULAIRESANDREEV VA; SUGAKOV VI.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 7; PP. 1963-1968; BIBL. 11 REF.Article

THEORY OF SHALLOW DONOR IMPURITY NEAR-SURFACE STATES IN SI AND GEGODWIN VE; TEFFT WE.1973; SURF. SCI.; NETHERL.; DA. 1973; VOL. 34; NO 1; PP. 108-118; BIBL. 15 REF.Serial Issue

ANALYSIS AND INTERPRETATION OF THE SHEET RESISTIVITY OF SHALLOW HIGHLY ARSENIC DOPED JUNCTIONS IN P-TYPE SILICON = ANALYSE ET INTERPRETATION DE LA RESISTANCE AU CARRE DE JONCTIONS ABRUPTES FORTEMENT DOPEES A L'ARSENIC DANS DU SILICIUM DU TYPE PPOTZL HW; GUERRERO E.1983; AEUE. ARCHIV FUER ELEKTRONIK UND UEBERTRAGUNGSTECHNIK; ISSN 0001-1096; DEU; DA. 1983; VOL. 37; NO 5-6; PP. 211-213; ABS. GER; BIBL. 9 REF.Article

TRANSITIONS NON RADIATIVES DANS LES CENTRES DONNEURS DANS UN CHAMP MAGNETIQUE FORTPEREL VI; POLYAKOV DG.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 1; PP. 88-94; BIBL. 17 REF.Article

MAGNETIC FIELD DEPENDENCE OF PHOTOTHERMAL CONDUCTIVITY SPECTRA IN THE FAR INFRARED OF THE BORON ACCEPTOR IN GERMANIUMJONGBLOETS HWHM; VAN DE STEEG MJH; STOELINGA JHM et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 25; PP. 4769-4777; BIBL. 19 REF.Article

  • Page / 21