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ANALYSIS OF NONEXPONENTIAL TRANSIENT CAPACITANCE IN SILICON DIODES HEAVILY DOPED WITH PLATINUMPHILLIPS WE; LOWNEY JR.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2786-2791; BIBL. 12 REF.Article

EXTRINSIC PHOTOCONDUCTIVITY IN PLATINUM-DOPED SILICONBICKLEY WP; EDDOLLS DV; MAHER EF et al.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 23; PP. 898-899; BIBL. 3 REF.Article

INTEGRAL THERMOLUMINESCENCE OF POLYCRYSTALLINE AL2O3 AND AL2O3/PTEWERTOWSKI F; KRUPINSKI W.1979; POLISH J. CHEM.; POL; DA. 1979; VOL. 53; NO 10; PP. 2069-2073; ABS. POL; BIBL. 14 REF.Article

ETUDE DES PARAMETRES DES NIVEAUX DU PLATINE DANS SI NLEBEDEV AA; SOBOLEV NA; URUNBAEV BM et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 8; PP. 1519-1522; BIBL. 12 REF.Article

ENERGY LEVELS AND CONCENTRATIONS FOR PLATINIUM IN SILICON.LISIAK KP; MILNES AG.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 533-540; BIBL. 16 REF.Article

PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON.LISIAK KP; MILNES AG.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5229-5235; BIBL. 22 REF.Article

A COMPARISON OF THE PERFORMANCE OF GOLD AND PLATINUM KILLED POWER DIODESBROTHERTON SD; BRADLEY P.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 2; PP. 119-125; BIBL. 16 REF.Article

HOLE PHOTOIONISATION CROSS SECTIONS FOR DEEP LEVEL IMPURITIES IN SILICONLEDEBO LA.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 22; PP. 3279-3287; BIBL. 22 REF.Article

ELECTRICAL RECTIFICATION CAUSED BY LAMELLAR MICROSTRUCTURES IN PLATINUM-DOPED TIO2-X CERAMICSMEITZLER AH; SHINOZAKI SS; DONLON WT et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 7; PP. 651-653; BIBL. 6 REF.Article

MOESSBAUER STUDY OF TRANSITION METAL IMPURITIES IN HYDROGEN-LOADED PALLADIUM.IANNARELLA L; DANON J; WAGNER FE et al.1974; NOTAS FIS.; BRAS.; DA. 1974; VOL. 23; NO 13; PP. 233-239; BIBL. 10 REF.Serial Issue

DETECTION OF DEEP CENTERS IN SEMICONDUCTORS BY STRAIN MODULATED ELECTRON SPIN RESONANCE: PT+ IN SIHENNING JCM; EGELMEERS ECJ.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1037-1039; BIBL. 16 REF.Article

SECTION DE CAPTURE DES TROUS SUR LE NIVEAU EV+0,34 EV DE SI:PTCARCELLE JE; CARTUJO P; MORANTE JR et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 4; PP. 843-848; ABS. ENG; BIBL. 18 REF.Article

ELECTRICAL PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY.EVWARAYE AO; SUN E.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3172-3176; BIBL. 13 REF.Article

PHOTOLUMINESCENCE IN ZNS (CU, PT) PHOSPHORS.KANARI PS; BALKRISHNA S; MISRA GC et al.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 1; PP. 5-9; BIBL. 13 REF.Article

ENERGY LEVELS FOR PLATINUM AND PALLADIUM IN SILICON MEASURED BY THE DARK TRANSIENT CAPACITANCE TECHNIQUE.PUGNET M; BARBOLLA J; BRABANT JC et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 2; PP. 533-543; ABS. FR.; BIBL. 28 REF.Article

PHOTOIONIZATION CROSS SECTIONS IN PLATINUM-DOPED SILICON.BRAUN S; GRIMMEISS HG; SPANN K et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 9; PP. 3882-3887; BIBL. 25 REF.Article

ELECTRICAL PROPERTIES OF PLATINUM IN SILICONBROTHERTON SD; BRADLEY P; BICKNELL J et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3396-3403; BIBL. 25 REF.Article

NB-SI A15 COMPOUNDS PRODUCED BY LIQUID QUENCHINGWATERSTRAT RM; HAENSSLER F; MULLER J et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 4763-4766; BIBL. 28 REF.Article

AN ESD AND SIMS STUDY OF THE COMPOSITION OF PLATINIZED, ANTIMONY-DOPED TIN OXIDE FILMS. IHOFLUND GB; COX DF; OHUCHI F et al.1983; APPLICATIONS OF SURFACE SCIENCE; ISSN 0378-5963; NLD; DA. 1983; VOL. 14; NO 3-4; PP. 281-296; BIBL. 61 REF.Article

PHOTOIONIZATION CROSS-SECTIONS AND ENERGY LEVELS OF GOLD, IRON, PLATINUM, SILVER, AND TITANIUM IN SILICONOKUYAMA M; MATSUNAGA N; CHEN JW et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 4; PP. 501-515; BIBL. 16 REF.Article

DEEP LEVELS OF PLATINUM IN SILICONSANDOW PM; DAS MB; STACH J et al.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 5; PP. 687-703; BIBL. 10 REF.Article

THE ROLE OF PT2+ AND PT4+ IMPURITY IONS IN THE PHOTOCHEMISTRY OF SINGLE-CRYSTAL SILVER CHLORIDEEACHUS RS; GRAVES RE; OLM MT et al.1978; J. CHEM. PHYS.; USA; DA. 1978; VOL. 69; NO 10; PP. 4580-4587; BIBL. 12 REF.Article

MEASUREMENT OF MINORITY CARRIER CAPTURE CROSS SECTIONS AND APPLICATION TO GOLD AND PLATINUM IN SILICONBROTHERTON SD; BRADLEY P.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1543-1553; BIBL. 25 REF.Article

ELECTRON AND HOLE CAPTURE AT AU AND PT CENTERS IN SILICONBROTHERTON SD; LOWTHER JE.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 9; PP. 606-609; BIBL. 13 REF.Article

HYSTERESIS AND MEMORY PROPERTIES OF PLATINUM-DIFFUSED METAL-OXIDE-SILICON STRUCTURESNASSIBIAN AG; FARAONE L.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 75-76; BIBL. 3 REF.Article

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