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IONISATION PAR CHOCS DES NIVEAUX PROFONDS DANS LES SEMICONDUCTEURSKUZ'MIN VA; KRYUKOVA NN; KYUREGYAN AS et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 9; PP. 1729-1733; BIBL. 18 REF.Article

INCORPORATION OF DEEP CENTRES. IN VPE GAAS.HUMBERT A; HOLLAN L; BOIS D et al.1976; APPL. PHYS.; GERM.; DA. 1976; VOL. 9; NO 2; PP. 117-119; BIBL. 23 REF.Article

A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

INHOMOGENEITY IN PHOTOCONDUCTORS.RABIE S; RUMIN N.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 506-509; BIBL. 10 REF.Conference Paper

MECANISME DES TRANSITIONS ELECTRONIQUES ENTRE VALLEES PAR L'INTERMEDIAIRE DE NIVEAUX QUASI DISCRETS ET EFFET GUNNTIMASHEV SF.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1364-1367; BIBL. 13 REF.Article

DEEP LEVEL STUDY BY ANALYSIS OF THERMAL AND OPTICAL TRANSIENTS IN SEMICONDUCTOR JUNCTIONSVINCENT G.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 23; NO 2; PP. 215-221; BIBL. 18 REF.Article

EXCITED STATES AT DEEP CENTERS IN SILICON AND II-VI COMPOUNDSGRIMMEISS HG.1981; J. LUMIN.; ISSN 0022-2313; NLD; DA. 1981; VOL. 23; NO 1-2; PP. 55-72; BIBL. 32 REF.Conference Paper

LIMITATION DU FACTEUR D'AMPLIFICATION PHOTOELECTRIQUE DES PHOTORESISTANCES EN SEMICONDUCTEURS COMPENSES A CENTRES PROFONDSARONOV DA; KNIGIN PI; KOROLEV YU S et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 6; PP. 1039-1045; BIBL. 14 REF.Article

IMPURITY AND VACANCY STATES IN PBTE.BAUER G; BURKHARD H; HEINRICH H et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1721-1723; BIBL. 15 REF.Article

IONISATION PAR LE CHAMP ELECTRIQUE DE CENTRES D'IMPURETES A NIVEAUX PROFONDS DANS LES SEMICONDUCTEURSPEREL'MAN NF.1976; FIZ. TVERD. TELA; S.S.S.R.; DA. 1976; VOL. 18; NO 4; PP. 992-997; BIBL. 14 REF.Article

DEEP CENTRES AND PHOTOPOLARIZATION IN SBSI-TYPE SEMICONDUCTORSSEMAK DG; KIKINESHI AA; CHEPUR DV et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 533-537; ABS. RUSSE; BIBL. 14 REF.Serial Issue

EFFET DES TRANSITIONS OPTIQUES DOUBLES SUR LE SPECTRE DE PHOTOCONDUCTIVITE EXTRINSEQUE DANS LES SEMICONDUCTEURS COMPENSESLEBEDEV AA.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 3; PP. 531-537; BIBL. 12 REF.Serial Issue

ETUDE DES PROPRIETES OPTIQUES ET PHOTOELECTRIQUES DES CRISTAUX TLGASE2BAKHYSHOV AD; MUSAEVA LG; LEBEDEV AA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1548-1551; BIBL. 5 REF.Article

SECTION DE PHOTOIONISATION DES CENTRES PROFONDS DANS LES SEMICONDUCTEURS COMPENSESMATRONITSKIJ YA S; ROZNERITSA YA A; CHEBAN AG et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 304-307; BIBL. 9 REF.Serial Issue

DEEP-LEVEL ENERGY SPECTROSCOPY IN P-TYPE CDTE USING TSC MEASUREMENTS. = SPECTROSCOPIE D'ENERGIE DES NIVEAUX PROFONDS DANS CDTE TYPE P AU MOYEN DE MESURES DE COURANT STIMULE THERMIQUEMENTMARTIN GM; FOGARASSY E; FABRE E et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 1; PP. 264-266; BIBL. 16 REF.Article

SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS.HALDANE FDM; ANDERSON PW.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 13; NO 6; PP. 2553-2559; BIBL. 5 REF.Article

LINEAR ELECTROABSORPTION DUE TO SUBSTITUTIONAL DEEP IMPURITIES IN WURTZITE-TYPE CRYSTALS.BOYN R; GARDAVSKY J.1975; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1975; VOL. 68; NO 1; PP. 275-284; ABS. ALLEM.; BIBL. 23 REF.Article

PLATINUM AS A LIFETIME-CONTROL DEEP IMPURITY IN SILICON.LISIAK KP; MILNES AG.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 12; PP. 5229-5235; BIBL. 22 REF.Article

RECOMBINAISON RADIATIVE AVEC DOMAINE DE CENTRES PROFONDS DANS DU GAAS COMPENSEPEKA GP; GORSHKOV LI; SPEKROR SA et al.1975; ZH. PRIKL. SPEKTROSK., BELORUS. S.S.R.; S.S.S.R.; DA. 1975; VOL. 22; NO 4; PP. 671-678; BIBL. 16 REF.Article

EFFET DE PINCEMENT ELECTRIQUE ANISOTROPE DANS LES SEMICONDUCTEURS A CENTRES PROFONDSGRIBNIKOV ZS.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 9; PP. 1740-1746; BIBL. 7 REF.Article

PHONON-ASSISTED TRANSITIONS TO A TEMPERATURE INDEPENDENT DEEP LEVEL IN CO-SI.WONG DC; PENCHINA CM.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 8; PP. 466-467; BIBL. 7 REF.Article

TEMPERATURE DEPENDANCES ON THE NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS. II: INTERPRETATION AND EXTRAPOLATION OF CAPTURE DATAPAESSLER R.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 103; NO 2; PP. 673-686; ABS. RUS; BIBL. 50 REF.Article

STUDY OF THERMALLY INDUCED DEEP LEVELS IN AL-DOPED SI.MARCHAND RL; CHIH TANG SAH.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 1; PP. 336-341; BIBL. 12 REF.Article

DETERMINATION DES NIVEAUX PROFONDS DANS LE SILICIUM DUS A L'IMPLANTATION D'IONS ARGON, PAR LA METHODE DES CARACTERISTIQUES V-FDABBASOVA RU; BOBROVA EA; GALKIN GN et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 448-452; BIBL. 9 REF.Article

SENSIBILITE DE PHOTODIODES S EN PRESENCE D'UN GRADIENT DE CONCENTRATION DES CENTRES PROFONDSADAMYAN ZN; ARUTYUNYAN VM; GASPARYAN FV et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 1879-1882; BIBL. 19 REF.Article

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