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Results 1 to 25 of 335

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RENDEMENT D'ELECTROLUMINESCENCE DES JONCTIONS P-N EN ARSENIURE DE GALLIUM DOPE PAR LE SILICIUMBASKIN EH M; VINKE AL; LISENKER BS et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 11; PP. 2227-2232; BIBL. 11 REF.Article

SOLID SOLUBILITY AT AMPHOTERIC SILICON IN GALLIUM ARSENIDE.TERAMOTO I.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1817-1822; BIBL. 17 REF.Article

A SOLID PLANAR SOURCE FOR PHOSPHORUS DIFFUSION.METZ DM; STACH J; JONES N et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1565-1569; BIBL. 12 REF.Article

DEEP CENTRE PHOTOLUMINESCENCE SPECTRA OF GAAS (CR, SI)INSTONE T; EAVES L.1978; J. PHYS. C; GBR; DA. 1978; VOL. 11; NO 18; PP. L771-L775; BIBL. 11 REF.Article

LUMINESCENCE DE L'ARSENIURE DE GALLIUM EPITAXIQUE FORTEMENT DOPE PAR LE SILICIUMKOVALENKO VF; PROKHOROVICH AV.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2064-2065; BIBL. 4 REF.Article

POLARITONS SUPERFICIELS DANS L'ARSENIURE DE GALLIUM APRES IMPLANTATION IONIQUEDMITRUK NL; LITOVCHENKO VG; NIKOLAEVA TN et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 9; PP. 2630-2633; BIBL. 17 REF.Article

LUMINESCENCE DE L'ARSENIURE DE GALLIUM EPITAXIQUE DOPE PAR LE SILICIUMARNAUDOV BG; BYKOVSKIJ VA; DOMANEVSKIJ DS et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 2; PP. 230-232; BIBL. 10 REF.Article

INFRARED ABSORPTION BANDS INDUCED BY SI-RELATED DEFECTS IN GAAS: ABSORPTION CROSS SECTIONSCHEN RT; RANA V; SPITZER WG et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1532-1538; BIBL. 24 REF.Article

RADIATIVE TRANSITIONS INDUCED IN GALLIUM ARSENIDE BY MODEST HEAT TREATMENTBIREY H; SITES J.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 619-624; BIBL. 17 REF.Article

ENVIRONMENTAL DOSIMETRY WITH AL2O3(SI, TI) THERMOLUMINESCENT PHOSPHORMEHTA SK; SENGUPTA S; OOMMEN IK et al.1982; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 0167-5087; NLD; DA. 1982; VOL. 197; NO 2/3; PP. 459-463; BIBL. 9 REF.Article

LOW TEMPERATURE PHOTOLUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAASBRIONES F; COLLINS DM.1982; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 4; PP. 847-866; BIBL. 16 REF.Article

INFLUENCE DU SILICIUM SUR LES PROPRIETES ELECTRONIQUES ET LA STRUCTURE DES MATERIAUX CARBONES LORS DU TRAITEMENT THERMIQUEOSTRONOV BG; KOTOSONOV AS; ZORIN FI et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 11; PP. 2035-2038; BIBL. 5 REF.Article

EFFECT OF COMPENSATION ON RECOMBINATION INTO SI DOPED (GA, AL) ASMAZZASCHI J; BARRAU J; BRABANT JC et al.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 4; PP. 861-864; ABS. FRE; BIBL. 4 REF.Article

RECOMBINAISON RADIATIVE DANS L'ARSENIURE DE GALLIUM IMPLANTE DE SILICIUM ET DE TELLUREDRAZHAN AV; ZUEV VA; KORBUTYAK DV et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 8; PP. 1166-1170; ABS. ENG; BIBL. 10 REF.Article

EFFECT OF IMPURITY AGGREGATION ON THE SHIFT OF THERMOLUMINESCENCE GLOW PEAK OF X-IRRADIATED KCL: SR2+INABE K; TAKEUCHI N.1978; JAP. J. APPL. PHYS.; JPN; DA. 1978; VOL. 17; NO 9; PP. 1549-1554; BIBL. 11 REF.Article

PHOTOCONDUCTIVITY MECHANISM OF N-TYPE CDS SINGLE CRYSTALS WITH CU & SI IMPURITIES.BELAL A.1977; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1977; VOL. 15; NO 5; PP. 320-322; BIBL. 5 REF.Article

SPECTROSCOPIC IDENTIFICATION OF SI DONORS IN GAASCOW TS; STILLMAN GE; COLLINS DM et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 12; PP. 1034-1036; BIBL. 21 REF.Article

COHERENT-POTENTIAL-APPROXIMATION STUDIES OF AMORPHOUS GE(SI)WHITE CT; CARLOS WE.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3380-3392; BIBL. 32 REF.Article

FREE-TO-BOUND TRANSITIONS IN SI-DOPED EPITAXIAL GA1-XALXASSWAMINATHAN V; STURGE MD; ZILKO JL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6306-6311; BIBL. 43 REF.Article

EFFECT OF DOPING ON POSITRON ANNIHILATION IN GAASTAKAI O; HISAMATSU Y; OWADA N et al.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 76; NO 2; PP. 157-159; BIBL. 22 REF.Article

THE ELECTRICAL PROPERTIES OF VAPOUR EPITAXIAL INDIUM PHOSPHIDE GROWN IN THE PRESENCE OF OXYGENHALES MC; KNIGHT JR.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 4; PP. 582-584; BIBL. 7 REF.Article

EFFECT OF HIGH DOPING ON THE PHOTOLUMINESCENCE EDGE OF GAAS AND INPSEISHU BENDAPUDI; BOSE DN.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 287-289; BIBL. 18 REF.Article

NIVEAUX D'ENERGIE LOCALISES DANS LE SILICIUM DUS A L'IMPLANTATION D'IONS TITANE DANS LES STRUCUTRES SI-SIO2GALKIN GN; ABBASOVA RU; BOBROVA EA et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 299-304; BIBL. 11 REF.Article

THERMAL SPECTROSCOPY OF IMPURITY LEVELS BY OPTICAL ABSORPTION IN BULK GASFILLARD JP; BONNAFE J; CASTAGNE M et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 72; NO 1; PP. K65-K68; BIBL. 11 REF.Article

INFRARED ABSORPTION AND MICROSTRUCTURE OF LI-SATURATED SI-DOPED GAASCHEN RT; SPITZER WG.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 7; PP. 1607-1617; BIBL. 39 REF.Article

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