ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF TE-DOPED GAAS GROWN BY MOLECULAR BEAM EPITAXYJIANG DE SHENG; MAKITA Y; PLOOG K et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 999-1006; BIBL. 29 REF.Article

RADIATIVE TRANSITIONS INDUCED IN GALLIUM ARSENIDE BY MODEST HEAT TREATMENTBIREY H; SITES J.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 619-624; BIBL. 17 REF.Article

A DEFECT MODEL FOR UNDOPED AND TELLURIUM DOPED GALLIUM ARSENIDEFEWSTER PF.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 10; PP. 883-889; BIBL. 23 REF.Article

ELECTRICAL AND OPTICAL PROPERTIES OF TELLURIUM-DOPED SILICONLIN AL; CROUSE AG; WENDT J et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 683-685; BIBL. 9 REF.Article

DIELECTRIC CONSTANT OF SEMI-INSULATING GALLIUM ARSENIDENEIDERT RE.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 7; PP. 244-245; BIBL. 5 REF.Article

PHOTOLUMINESCENCE DES CRISTAUX D'ANTIMONIURE DE GALLIUM A TEMPERATURE AMBIANTEKURENKEEV TB; FILIPCHENKO AS; BOL'SHAKOV LP et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2167-2171; BIBL. 6 REF.Article

COMPORTEMENT DU CUIVRE DANS L'ARSENIURE DE GALLIUM A HAUTE CONCENTRATION DE TELLURE. II. PROPRIETES PHOTOELECTRIQUESKRIVOV MA; MEL'CHENKO EH N; KHLUDKOV SS et al.1979; IZV. VYSS. UCEBN. ZAVED., FIZ.; ISSN 0021-3411; SUN; DA. 1979; VOL. 22; NO 9; PP. 11-15; BIBL. 3 REF.Article

PHOTOLUMINESCENCE OF DOPED N-TYPE INDIUM ARSENIDE AND INDIUM ANTIMONIDE CRYSTALSFILIPCHENKO AS; KURENKEEV TB; SEISENBAEV T et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. K251-K254; BIBL. 9 REF.Article

OPTICAL RECTIFICATION AND PHOTON DRAG IN N-TYPE GALLIUM PHOSPHIDE.GIBSON AF; HATCH CB; KIMMITT MF et al.1977; J. PHYS. C; G.B.; DA. 1977; VOL. 10; NO 6; PP. 905-916; BIBL. 22 REF.Article

THE INFLUENCE OF DOPANTS ON THE HARDENING OF GAAS.WEISS BL; HARTNAGEL HL.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 8; PP. 3614-3615; BIBL. 11 REF.Article

INFLUENCE D'UNE FLUCTUATION DU POTENTIEL D'IMPURETE SUR L'EFFET BURSTEIN-MOSSARNAUDOV BG; VIL'KOTSKIJ VA; DOMANEVSKIJ DS et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 9; PP. 1799-1802; BIBL. 11 REF.Article

EFFECT OF HIGH DOPING ON THE PHOTOLUMINESCENCE EDGE OF GAAS AND INPSEISHU BENDAPUDI; BOSE DN.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 287-289; BIBL. 18 REF.Article

NEW NITROGEN-RELATED RECOMBINAISON IN GAPSNYDER PG; GUNDERSEN MA.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 4; PP. 2539-2542; BIBL. 11 REF.Article

LUMINESCENCE EXCITATION SPECTRA AND THEIR EXCITON STRUCTURES OF ZNS PHOSPHORS. II: AL AND TE DOPED PHOSPHORSHOSHINA T; KAWAI H.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 2; PP. 279-287; BIBL. 23 REF.Article

ETUDE PAR MICROCATHODOLUMINESCENCE DE L'INFLUENCE DES DEFAUTS DE LA STRUCTURE SUR LA RECOMBINAISON RADIATIVE DANS L'ARSENIURE DE GALLIUMGOVORKOV AV; KOLESNIK LI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 3; PP. 448-452; BIBL. 12 REF.Article

THE IDENTIFICATION OF THE ELECTRONIC STATE OF NUCLEOGENIC TELLURIUM IN ANTIFERROMAGNETIC MNI₂.PASTERNAK M.1974; CHEM. PHYS. LETTERS; NETHERL.; DA. 1974; VOL. 27; NO 2; PP. 254-255; BIBL. 7 REF.Article

INFLUENCE DE LA COMPENSATION SUR LA LUMINESCENCE LIMITE DE L'ARSENIURE DE GALLIUM FORTEMENT DOPEARNAUDOV BG; DOMANEVSKIJ DS; EVTIMOVA SK et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 4; PP. 607-610; BIBL. 10 REF.Article

ELECTRON TRAP BEHAVIOUR IN TE-DOPED GAAS_0.6P_0.4HENNING ID; THOMAS H.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 4; PP. 325-333; BIBL. 21 REF.Article

LUMINESCENCE STUDY OF A DEEP LEVEL IN N-FREE GAP LIGHT EMITTING DIODESNISHIZAWA J; SIN CC; SUTO K et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 8; PP. 5876-5881; BIBL. 14 REF.Article

DIE EINWIRKUNG DE TE- UND S-BEIMISCHUNGEN AUF DIE KRISTALLISATIONSKINETIK DES GLASIGEN SELENS = L'INFLUENCE D'ADDITIONS DE TE ET S SUR LA CINETIQUE DE CRISTALLISATION DU SELENIUM VITREUXSWIATKOWSKI W.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 9; PP. 755-760; ABS. ENG; BIBL. 24 REF.Article

LASER PULSE ANNEALING OF ION-IMPLANTED GAASCAMPISANO SU; FOTI G; RIMINI E et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 295-298; BIBL. 19 REF.Article

SPECTRE D'ENERGIE DES ETATS DONNEURS DU TELLURE DANS LES MONOCRISTAUX DE SOLUTIONS SOLIDES GE-SIAZHDAROV G KH; GANIEV AS; SHAKHTAKHTINSKIJ MG et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2297-2301; BIBL. 12 REF.Article

MOSS-BURSTEIN EFFECT IN N-TYPE GALLIUM ANTIMONIDE CRYSTALSFILIPCHENKO AS; BOLSHAKOV LP; NAURIZBAEV A et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. K115-K117; BIBL. 8 REF.Article

TWO TYPES OF LUMINESCENCE TRANSITIONS IN CDS INVOLVING TE ISOELECTRONIC TRAPS.FUKUSHIMA T; SHIONOYA S.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 5; PP. 813-819; BIBL. 19 REF.Article

SOLUBILITES INDIVIDUELLES ET SIMULTANEES DE ZN, CD ET TE DANS INASGLAZOV VM; NAGIEV VA; GLAGOLEVA NN et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 7; PP. 1181-1183; BIBL. 6 REF.Article