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Results 1 to 25 of 12839

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HOMOGENEITY OF SOLIDS: A PROPOSAL FOR QUANTITATIVE DEFINITIONINCZEDY J.1982; TALANTA (OXF.); ISSN 0039-9140; GBR; DA. 1982; VOL. 29; NO 7; PP. 643-645; BIBL. 3 REF.Article

IMPURITY STRIATIONS IN MELT-GROWN CRYSTALSALEKSANDROVSKII AL; POSMYKIEWICZ P.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 74; NO 1; PP. K23-K26; BIBL. 6 REF.Article

CONCENTRATION BROADENING OF BOUND-EXCITON SPECTRAL LINESPAN DS; SMITH DL; MCGILL TC et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 8; PP. 3581-3588; BIBL. 30 REF.Article

THE INFLUENCE OF DISLOCATION DENSITIES AND CA++ IMPURITIES ON MACROSCOPIC FLOW PARAMETERS OF NACLAPPEL F.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 477-485; ABS. GER; BIBL. 27 REF.Article

COMPORTEMENT DE L'ETAIN DANS L'ANTIMONIURE D'INDIUMIVLEVA VS; KEVORKOV MN; MITROFANOVA RS et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 3; PP. 534-537; BIBL. 11 REF.Article

INFLUENCE OF HIGH YTTRIUM CONCENTRATIONS ON THE ELECTRICAL PROPERTIES OF CAF2 CRYSTALS.MARIANI E; SVANTNER M; FJODOROV PP et al.1977; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1977; VOL. 27; NO 4; PP. 260-265; ABS. RUSSE; BIBL. 17 REF.Article

INJECTION-LEVEL DEPENDENCE, FREQUENCY RESPONSE, AND THERMAL QUENCHING OF THE 1.39-EV LUMINESCENCE IN SN-DOPED LPE GAAS.NORRIS CB.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4706-4712; BIBL. 40 REF.Article

CONCENTRATION DEPENDENCE CURVES OF CATHODOLUMISCENCE OF Y2O2S:TB.OZAWA L; HERSH HN.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 12; PP. 727-729; BIBL. 12 REF.Article

BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMI-CONDUCTORSBERGGREN KF; SERNELIUS BE.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 4; PP. 1971-1986; BIBL. 27 REF.Article

DOPING DEPENDENCE OF THE DEBYE SCREENING LENGTH IN HEAVILY-DOPED SEMICONDUCTORS HAVING GAUSSIAN BAND-TAILSGHATAK KP; CHOWDHURY AK; GHOSH S et al.1980; ACTA PHYS. POL., A; ISSN 0587-4246; POL; DA. 1980; VOL. 58; NO 4; PP. 389-395; BIBL. 11 REF.Article

AN AUTOMATIC SMOOTHING ALGORITHM FOR THE CALCULATION OF IMPURITY CONCENTRATION FROM SHEET RESISTIVITY AND SHEET HALL COEFFICIENT DATAHILL AC; ALLEN WG; BRADLEY R et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 491-496; BIBL. 24 REF.Article

PHOTOLUMINESCENCE SPECTRA OF N-TYPE GAAS:SN CRYSTALSPOPOV AS; YAKIMOVA RT.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K17-K21; BIBL. 7 REF.Article

MECANISME DE LA THERMOLUMINESCENCE ROUGE DES CRISTAUX AL2O3:CR3+SIKORA AV; VOJTSENYA TI; GRITSYNA VT et al.1979; UKRAIN. FIZ. ZH.; UKR; DA. 1979; VOL. 24; NO 3; PP. 299-303; ABS. ENG; BIBL. 10 REF.Article

CHARGE AND MASS TRANSFER INVOLVING HYDROGEN IN MGO CRYSTALS THERMOCHEMICALLY REDUCED AT HIGH TEMPERATURESCHEN Y; GONZALEZ R; SCHOW OE et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 2; PP. 1276-1282; BIBL. 18 REF.Article

AN EXPLANATION FOR THE ANOMALOUS IMPURITY CONCENTRATIONS IN SI AS MEASURED BY THE HALL EFFECTNEUMARK GF; SCHRODER DK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 855-858; BIBL. 19 REF.Article

INVESTIGATION OF THE IMPURITY PROFILES BY MEANS OF THE SCANNING ELECTRON MICROPROBE (SEM)OELGART G; WAGNER G.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 43-50; ABS. GER; BIBL. 8 REF.Article

DETERMINATION OF ABSOLUTE INTERNAL QUANTUM EFFICIENCIES OF PHOTOLUMINESCENCE IN GALLIUM ARSENIDE.METTLER K.1977; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1977; VOL. 6; NO 3; PP. 152-155; BIBL. 14 REF.Article

SINK STRENGTHS FOR HIGH CONCENTRATIONS OF COMPETING SINKSSCHROEDER K; FELDERHOF BU.1982; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1982; VOL. 105; NO 1; PP. 11-13; BIBL. 9 REF.Article

A PHOTOLUMINESCENCE STUDY OF BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR BEAM EPITAXYSCOTT GB; DUGGAN G; DAWSON P et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6888-6895; BIBL. 28 REF.Article

A NON-DESTRUCTIVE METHOD FOR DETERMINING THE EU2+ CONCENTRATION IN THE ALKALI CHLORIDESHERNANDEZ AJ; CORY WK; RUBIO OJ et al.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 3; PP. 533-538; BIBL. 27 REF.Article

PHOTOLUMINESCENCE IN HEAVILY-DOPED SI(P)PARSONS RR.1978; CANAD. J. PHYS.; CAN; DA. 1978; VOL. 56; NO 7; PP. 814-826; ABS. FRE; BIBL. 25 REF.Article

CONCENTRATION-DEPENDENT DIFFUSION IN A COMPOSITE SLAB WITH AND WITHOUT CHEMICAL REACTIONSLIN SH.1979; APPL. SCI. RES.; NLD; DA. 1979; VOL. 35; NO 5-6; PP. 333-346; BIBL. 10 REF.Article

ELECTROLUMINESCENCE DE KCL-TLDRUZHININ AP; LEBEDEVA NI; NESMELOV NS et al.1979; OPT. I SPEKTROSK.; SUN; DA. 1979; VOL. 47; NO 5; PP. 917-919; BIBL. 9 REF.Article

EFFECTS OF IMPURITIES ON THE ORBITAL MAGNETIC SUSCEPTIBILITY.JOHNSON LG.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 6; PP. 3054-3059; BIBL. 13 REF.Article

LUMINESCENCE DE L'ARSENIURE DE GALLIUM EPITAXIQUE FORTEMENT DOPE PAR LE SILICIUMKOVALENKO VF; PROKHOROVICH AV.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2064-2065; BIBL. 4 REF.Article

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