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Results 1 to 25 of 3995

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DIFFUSION MECHANISM OF NICKEL AND POINT DEFECTS IN SILICONKITAGAWA H; HASHIMOTO K; YOSHIDA M et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. 276-280; BIBL. 19 REF.Article

DIFFUSION OF GALLIUM IN QUARTZ AND BULK-FUSED SILICAMIZUTANI S; OHDOMARI I; MIYAZAWA T et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1470-1473; BIBL. 10 REF.Article

OBSERVATION OF THE ANOMALOUS CONCENTRATION PROFILES OF ANTIMONY ATOMS DIFFUSED INTO SILICON DUE TO LOCAL PRECIPITATIONSUNG HAE SONG; NIIMI T; KOBAYASHI K et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 4; PP. 841-846; BIBL. 20 REF.Article

VACANCY-ASSISTED TRACER DIFFUSION: RESPONSE AT SMALL VACANCY CONCENTRATIONTAHIR KHELI RA; ELLIOTT RJ.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 14; PP. L445-L453; BIBL. 20 REF.Article

GENERALIZATION OF THE BOLTZMANN-MATANO METHOD.VAN OPDORP C.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 2; PP. 349; BIBL. 4 REF.Article

HIGH CONCENTRATION ANTIMONY DIFFUSION INTO SILICON USING AUXILIARY WAFERSNANBA M; KOZUKA H; USAMI K et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 235-237; BIBL. 8 REF.Article

PRECISELY CONTROLLED SHALLOW P+ DIFFUSION IN GAASGHANDHI SK; FIELD RJ.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 267-269; BIBL. 8 REF.Article

ANOMALOUS ARSENIC DIFFUSION IN SILICON DIOXIDEWADA Y; ANTONIADIS DA.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 6; PP. 1317-1320; BIBL. 16 REF.Article

DIFFUSION PROFILING USING THE GRADED C(V) METHODSHAPPIR J; KOLODNY A; SHACHAM DIAMAND Y et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 993-995; BIBL. 7 REF.Article

ON THE THEORY OF THE DIFFUSION OF GOLD INTO SILICONJEEGER A.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 61; NO 2; PP. 521-529; ABS. GER; BIBL. 9 REF.Article

THEORIE DE LA DISSOLUTION ET DE LA DIFFUSION DE L'HYDROGENE DANS LES METAUXNIKULIN VK; POTEKHINA ND.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 11; PP. 2751-2756; BIBL. 27 REF.Conference Paper

ADATOM MOBILITY ON THE SURFACE PLANES OF A SIMPLE METALMEADOR AB; TE HUA LIN; HUNTINGTON HB et al.1980; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1980; VOL. 97; NO 1; PP. 53-72; BIBL. 27 REF.Article

ALUMINIUM DIFFUSION INTO SILICON IN AN OPEN TUBE HIGH VACUUM SYSTEM.ROSNOWSKI W.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 6; PP. 957-962; BIBL. 19 REF.Article

ETUDE DE LA DIFFUSION DE L'HELIUM DANS LE FLUORURE DE CALCIUM EN REGIME STATIQUE DU FONCTIONNEMENT D'UN SPECTROMETRE DE MASSEPOPOV EV; KUPRYAZHKIN A YA.1983; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1983; VOL. 53; NO 2; PP. 365-368; BIBL. 9 REF.Article

DIFFUSION OF ION IMPLANTATED ALUMINIUM IN SILICON CARBIDETAJIMA Y; KIJIMA K; KINGERY WD et al.1982; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1982; VOL. 77; NO 5; PP. 2592-2598; BIBL. 33 REF.Article

THE RANGE OF DIFFUSION ENHANCEMENT OF B AND P IN SI DURING THERMAL OXIDATIONMIZUO S; HIGUCHI H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 2; PART. 1; PP. 272-275; BIBL. 12 REF.Article

DIFFUSION OF GOLD IN SILICON: A NEW MODELGOSELE U; MOREHEAD F; FRANK W et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 3; PP. 157-159; BIBL. 20 REF.Article

DIFFUSION OF ZINC IN GALLIUM ARSENIDE: A NEW MODELGOESELE U; MOREHEAD F.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4617-4619; BIBL. 10 REF.Article

SHALLOW DIFFUSIONS OF ZINC IN GAAS AT 700OCTUCK B; HOUGHTON AJN.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 65; NO 2; PP. 643-647; ABS. GER; BIBL. 15 REF.Article

METHODES RADIOCHIMIQUES D'ETUDE DE L'ETAT ET DE LA DIFFUSION DES GAZ DANS LES SOLIDESBEKMAN IN.1980; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1980; VOL. 54; NO 11; PP. 2785-2790; BIBL. 5 REF.Conference Paper

DIFFUSION PROCESSING OF ARSENIC SPIN-ON DIFFUSION SOURCES.JUSTICE BH; HARNISH DF; JONES HF et al.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 7; PP. 39-42Article

BORON PREDEPOSITION IN SILICON USING BBV3.NEGRINI P; RAVAGLIA A; SOLNI S et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 609-613; BIBL. 24 REF.Article

DIFFUSION OF AG ON CLEAN GE (111) WITH DIFFERENT STEP DENSITIESSULIGA E; HENZLER M.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 8; PP. 1543-1554; BIBL. 22 REF.Article

DIFFUSIVITY OF OXYGEN IN SILICON AT THE DONOR FORMATION TEMPERATURESTAVOLA M; PATEL JR; KIMERLING MC et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 73-75; BIBL. 16 REF.Article

RADIATION-ENHANCED DIFFUSION OF OXYGEN IN SILICON AT ROOM TEMPERATURENEWMAN RC; TUCKER JH; LIVINGSTON FM et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 5; PP. L151-L156; BIBL. 20 REF.Article

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