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Results 1 to 25 of 2095

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THE COMPLETE DOPING PROFILE USING MOS CV TECHNIQUESHI TRON LIN; REUTER J.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 343-351; BIBL. 21 REF.Article

SUR LE CARACTERE DE LA DISTRIBUTION DES IMPURETES DANS LE SILICIUM TECHNIQUEMALYSHEVA LA; PINCHUK PA; CHICHAEVA VI et al.1978; CVETN. METALLY; SUN; DA. 1978; NO 7; PP. 48-51Article

SILICON EPITAXIAL WAFER PROFILING USING THE MERCURY-SILICON SCHOTTKY DIODE DIFFERENTIAL CAPACITANCE METHODSCHAFFER PS; LALLY TR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 229-233; BIBL. 5 REF.Article

ION-IMPLANTATION DISTRIBUTIONS IN NON-UNIFORM TARGETS: PROJECTED RANGEWINTERBON KB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 31-38; BIBL. 12 REF.Article

ION IMPLANTATION DISTRIBUTIONS IN INHOMOGENEOUS MATERIALS.WINTERBON KB.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 649-651Article

RAPID DETERMINATION OF THE DISTRIBUTION OF 31P IN NEUTRON-IRRADIATED SILICON.YUSA A; YATSURUGI Y; TAKAISHI T et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 312-314; BIBL. 6 REF.Article

INFLUENCE DE LA PULVERISATION SUR LE PROFIL DE DISTRIBUTION DES IMPURETES IONIQUES IMPLANTEESBILYUS KI; PRANYAVICHYUS LI.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 7; PP. 1355-1357; BIBL. 9 REF.Article

THEORIE DES PROPRIETES PHOTOELECTRIQUES DES STRUCTURES AVEC UNE DISTRIBUTION UNIDIMENSIONNELLEMENT NON UNIFORME DES IMPURETESNEUSTROEV LN; OSIPOV VV.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 2; PP. 99-106; BIBL. 11 REF.Article

PROFILS DE LA DISTRIBUTION DE L'IMPURETE INTRODUITE POUR DE GRANDES DOSES DE DOPAGE PAR IMPLANTATIONTITOV VV.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 4; PP. 844-849; BIBL. 4 REF.Article

EFFECTS ON VLSI YIELD OF DOUBLY-STOCHASTIC IMPURITY DISTRIBUTIONS = EFFETS DES DISTRIBUTIONS DOUBLEMENT STOCHASTIQUES D'IMPURETES SUR LA PERFORMANCE DE L'INTEGRATION A TRES GRANDE ECHELLEPRUCNAL PR; CARD HC.1982; IEEE TRANS. RELIAB.; ISSN 0018-9529; USA; DA. 1982; VOL. 31; NO 2; PP. 185-190; BIBL. 14 REF.Article

REDISTRIBUTION OF DOPANT IMPURITIES IN OXIDIZING AMBIENTS = REDISTRIBUTION DES IMPURETES DE DOPAGE DANS LES ATMOSPHERES OXYDANTESHILL AC; ALLEN WG.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 633-637; BIBL. 12 REF.Article

EFFECT OF ELECTRIC FIELDS ON CR REDISTRIBUTION AT GAAS SURFACESYEE CML; FEDDERS PA; WOLFE CM et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 377-379; BIBL. 20 REF.Article

TWO-FREQUENCY METHOD FOR MEASURING IMPURITY PROFILESSUKEGAWA T; OGITA M.1979; REV. SCI. INSTRUM.; USA; DA. 1979; VOL. 50; NO 1; PP. 41-45; BIBL. 9 REF.Article

PEARSON DISTRIBUTIONS FOR ION RANGESWINTERBON KB.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 205-206; BIBL. 10 REF.Article

LE PROBLEME DE LA CONSTRUCTION DE PROFILS DONNES DE DISTRIBUTION DE L'IMPURETE PAR LA METHODE D'IMPLANTATION IONIQUETITOV VV.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 11; PP. 2407-2411; BIBL. 3 REF.Article

ANALYTICAL CALCULATIONS OF SOME ION-IMPLANTATION DEPTH DISTRIBUTIONSWINTERBON KB; SANDERS JB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 39-44; BIBL. 9 REF.Article

INFLUENCE DES DEFAUTS DES HETEROSTRUCTURES ALXGA1-XAS-GAAS SUR LA DISTRIBUTION PAR DIFFUSION DES IMPURETES DU GROUPE IDZHAFAROV TD; DEMAKOV YU P; MARONCHUK IE et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 6; PP. 949-951; BIBL. 5 REF.Article

ON-LINE CAPACITANCE-VOLTAGE, DOPING PROFILE MEASUREMENT OF LOW DOSE ION IMPLANTSGORDON BJ.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2268-2272; BIBL. 9 REF.Article

SELF-CONSISTENT APPROACH TO THE PERIODIC DISTRIBUTION OF ALIOVALENT IMPURITIES IN IONIC CRYSTALSMARTINOV N; OUROUSHEV D; GEORGIEV M et al.1979; BULG. J. PHYS.; BGR; DA. 1979; VOL. 6; NO 1; PP. 38-49; ABS. RUS; BIBL. 8 REF.Article

EFFECT OF PLANAR OSCILLATIONS ON IMPLANTED DISTRIBUTIONS MEASURED BY LOW-ANGLE HE+ BACKSCATTERING.WAGH AG; WILLIAMS JS.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 175-176; BIBL. 8 REF.Article

THE KINETICS OF OPEN TUBE PHOSPHORUS DIFFUSION IN SILICON = CINETIQUE DE DIFFUSION EN TUBE OUVERT DU PHOSPHORE DANS LE SILICIUMGHOSHTAGORE RN.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1239-1243; BIBL. 16 REF.Article

ETUDE DE LA REDISTRIBUTION DU BORE DANS LE SILICIUM SOUS UNE COUCHE D'OXYDE EN PHASE GAZEUSEFEDOROVICH NA; SOKOLOV VI.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 6; PP. 1001-1006; BIBL. 4 REF.Article

IMPURITY PROFILE MEASUREMENTS OF THIN EPITAXIAL SILICON WAFER BY MULTILAYER SPREADING RESISTANCE ANALYSIS.IIDA Y; ABE H; KONDO M et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 7; PP. 1118-1122; BIBL. 15 REF.Article

EFFET CINETIQUE SUR LES COEFFICIENTS DE DISTRIBUTION D'UNE IMPURETE PENDANT LA CROISSANCE DES CRISTAUX A PARTIR DU PRODUIT FONDULYUBALIN MD.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 4; PP. 596-599; BIBL. 19 REF.Article

MEASUREMENTS OF THE LATERAL SPREAD OF HEAVY IONS IMPLANTED INTO SILICON.GRANT WA; WILLIAMS JS; DODDS D et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 3; PP. 189-190; BIBL. 21 REF.Article

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