SILICON EPITAXIAL WAFER PROFILING USING THE MERCURY-SILICON SCHOTTKY DIODE DIFFERENTIAL CAPACITANCE METHODSCHAFFER PS; LALLY TR.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 4; PP. 229-233; BIBL. 5 REF.Article

ION-IMPLANTATION DISTRIBUTIONS IN NON-UNIFORM TARGETS: PROJECTED RANGEWINTERBON KB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 31-38; BIBL. 12 REF.Article

ION IMPLANTATION DISTRIBUTIONS IN INHOMOGENEOUS MATERIALS.WINTERBON KB.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 649-651Article

THEORIE DES PROPRIETES PHOTOELECTRIQUES DES STRUCTURES AVEC UNE DISTRIBUTION UNIDIMENSIONNELLEMENT NON UNIFORME DES IMPURETESNEUSTROEV LN; OSIPOV VV.1980; MIKROELEKTRONIKA; SUN; DA. 1980; VOL. 9; NO 2; PP. 99-106; BIBL. 11 REF.Article

PROFILS DE LA DISTRIBUTION DE L'IMPURETE INTRODUITE POUR DE GRANDES DOSES DE DOPAGE PAR IMPLANTATIONTITOV VV.1979; ZH. TEKH. FIZ.; SUN; DA. 1979; VOL. 49; NO 4; PP. 844-849; BIBL. 4 REF.Article

EFFECTS ON VLSI YIELD OF DOUBLY-STOCHASTIC IMPURITY DISTRIBUTIONS = EFFETS DES DISTRIBUTIONS DOUBLEMENT STOCHASTIQUES D'IMPURETES SUR LA PERFORMANCE DE L'INTEGRATION A TRES GRANDE ECHELLEPRUCNAL PR; CARD HC.1982; IEEE TRANS. RELIAB.; ISSN 0018-9529; USA; DA. 1982; VOL. 31; NO 2; PP. 185-190; BIBL. 14 REF.Article

REDISTRIBUTION OF DOPANT IMPURITIES IN OXIDIZING AMBIENTS = REDISTRIBUTION DES IMPURETES DE DOPAGE DANS LES ATMOSPHERES OXYDANTESHILL AC; ALLEN WG.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 7; PP. 633-637; BIBL. 12 REF.Article

EFFECT OF ELECTRIC FIELDS ON CR REDISTRIBUTION AT GAAS SURFACESYEE CML; FEDDERS PA; WOLFE CM et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 377-379; BIBL. 20 REF.Article

TWO-FREQUENCY METHOD FOR MEASURING IMPURITY PROFILESSUKEGAWA T; OGITA M.1979; REV. SCI. INSTRUM.; USA; DA. 1979; VOL. 50; NO 1; PP. 41-45; BIBL. 9 REF.Article

PEARSON DISTRIBUTIONS FOR ION RANGESWINTERBON KB.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 2; PP. 205-206; BIBL. 10 REF.Article

LE PROBLEME DE LA CONSTRUCTION DE PROFILS DONNES DE DISTRIBUTION DE L'IMPURETE PAR LA METHODE D'IMPLANTATION IONIQUETITOV VV.1978; ZH. TEKH. FIZ.; SUN; DA. 1978; VOL. 48; NO 11; PP. 2407-2411; BIBL. 3 REF.Article

ANALYTICAL CALCULATIONS OF SOME ION-IMPLANTATION DEPTH DISTRIBUTIONSWINTERBON KB; SANDERS JB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 39-44; BIBL. 9 REF.Article

INFLUENCE DES DEFAUTS DES HETEROSTRUCTURES AL_XGA_1-XAS-GAAS SUR LA DISTRIBUTION PAR DIFFUSION DES IMPURETES DU GROUPE IDZHAFAROV TD; DEMAKOV YU P; MARONCHUK IE et al.1977; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1977; VOL. 13; NO 6; PP. 949-951; BIBL. 5 REF.Article

LOW DOSE DEPTH DISTRIBUTION OF RECOIL IMPLANTED ATOMSFALCONE G; OLIVA A.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 41-43; BIBL. 17 REF.Article

ON THE CONDITION OF STRONG INVERSION AND TERMINAL VOLTAGES IN MOS STRUCTURES WITH NONUNIFORM AND DEGENERATE DOPINGRITU SHRIVASTAVA; MARSHAK AH.1982; IEEE TRANS. ACOUST. SPEECH SIGNAL PROCESS.; ISSN 0096-3518; USA; DA. 1982; VOL. 29; NO 6; PP. 1009-1013; BIBL. 9 REF.Article

ION IMPLANTATION PROCESSES IN SILICONSTONE JL; PLUNKETT JC.1981; MATER. PROCESS.-THEORY PRACT.; NLD; DA. 1981; VOL. 2; PP. 55-146; BIBL. 178 REF.Article

TWO-DIMENSIONAL NUMERICAL SIMULATION OF IMPURITY REDISTRIBUTION IN VLSI PROCESSESTIELERT R.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1479-1483; BIBL. 10 REF.Article

IMPLANT ION COLLECTION IN THE PRESENCE OF RATIATION ENHANCED DIFFUSION AND PREFERENTIAL SPUTTERING OF IMPLANTCARTER G; WEBB R; COLLINS R et al.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 125-132; BIBL. 25 REF.Article

ANALYSE PAR LA METHODE DES COUPES SERIEES, DES COUCHES EPITAXIQUES DE GERMANIUM AVEC UN SPECTROMETRE DE MASSE A SOURCE IONIQUE D'ETINCELLESSAPRYKIN AI; SHELPAKOVA IR; YUDELEVICH IG et al.1979; IZV. SIB. OTD. AKAD. NAUK SSSR, SER. KHIM. NAUK; SUN; DA. 1979; NO 4; PP. 100-104; ABS. ENG; BIBL. 12 REF.Article

ELECTROCHEMICAL DOPING SILICON WITH ARSENIC.ANTULA J.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2581-2582; BIBL. 14 REF.Article

MEASUREMENT OF HYDROGEN DEPTH DISTRIBUTION BY RESONANT NUCLEAR REACTIONS.BARNES CA; OVERLEY JC; SWITKOWSKI ZE et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 239-241; BIBL. 10 REF.Article

APPLICATION DE L'OBSERVATION DIRECTE DE REACTIONS NUCLEAIRES A L'ETUDE DE L'IMPLANTATION IONIQUE.CACHARD A; THOMAS JP.1976; ACTA ELECTRON.; FR.; DA. 1976; VOL. 19; NO 1; PP. 41-46; ABS. ANGL.; BIBL. 19 REF.Article

UEBER DIE MOEGLICHKEITEN DER ELEKTRONENSTRAHLMIKROSONDE BEI DER BESTIMMUNG VON DOTIERUNGSPROFILEN IN HALBLEITERN. = POSSIBILITES D'UNE MICROSONDE A FAISCEAU ELECTRONIQUE DANS LA DETERMINATION DES PROFILS DE DOPAGE DANS LES SEMICONDUCTEURSSTAVE J.1975; WISSENSCH. Z. UNIV. ROSTOCK, MAT.-NATURWISSENSCH. REIHE; DTSCH.; DA. 1975; VOL. 24; NO 5; PP. 605-611; ABS. RUSSE ANGL. FR.; BIBL. 5 REF.Article

CONSTRUCTION OF HIGHLY ASYMMETRIC ION IMPLANTATION PROFILES BY PEARSON IV DISTRIBUTIONBURENKOV AF; KOMAROV FF; TEMKIN MM et al.1982; RADIAT. EFF.; ISSN 0033-7579; GBR; DA. 1982; VOL. 66; NO 1-2; PP. 115-118; BIBL. 12 REF.Article

MICRODISTRIBUTION OF OXYGEN IN SILICONMURGAI A; CHI JY; GATOS HC et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1182-1186; BIBL. 19 REF.Article