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DEEP LEVEL, QUENCHED-IN DEFECTS IN SILICON DOPED WITH GOLD, SILVER, IRON, COPPER OR NICKELTAVENDALE AJ; PEARTON SJ.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 9; PP. 1665-1673; BIBL. 2 P.Article

DEFECT LEVELS IN CHROMIUM-DOPED SILICONKUNIO T JR; YAMAZAKI T; OHTA E et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 155-160; BIBL. 16 REF.Article

ON THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF DEEP CENTERS IN SEMICONDUCTING THIN FILMS FROM CAPACITANCE TRANSIENT SPECTROSCOPYZOHTA Y; WATANABE MO.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1809-1811; BIBL. 12 REF.Article

RIGOROUS FORMULATION OF HIGH-FIELD QUANTUM TRANSPORT APPLIED TO THE CASE OF ELECTRONS SCATTERED BY DILUTE RESONANT IMPURITIESJAUHO AP; WILKINS JW.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 10; PP. 762-765; BIBL. 17 REF.Article

TWO-POINT CORRELATION FUNCTION OF THE 2D ISING MODEL WITH IMPURITY LATTICE BONDSDOTSENKO VS; DOTSENKO VS.DOTSENKO VS; DOTSENKO VS.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 17; PP. L557-L563; BIBL. 14 REF.Article

CALCUL SEMI-EMPIRIQUE DE L'ENERGIE D'IONISATION OPTIQUE DU CENTRE TL0 DANS LE CRISTAL DE KCLERMOSHKIN AN; KOTOMIN EA; EHVARESTOV RA et al.1982; OPTIKA I SPEKTROSKOPIJA; ISSN 0030-4034; SUN; DA. 1982; VOL. 53; NO 1; PP. 186-189; BIBL. 12 REF.Article

STUDY OF DEEP LEVEL IN BULK P-INP BY ADMITTANCE SPECTROSCOPYKUO JM; THIEL FA.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 41-43; BIBL. 13 REF.Article

D-LEVELS IN CD1-XMNXSEICHIGUCHI T; DREW HD; FURDYNA JK et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 8; PP. 612-615; BIBL. 9 REF.Article

THE ELECTRONIC STRUCTURE OF A HYDROGEN IMPURITY IN ALUMINIUM. III: THE ENERGY AND THE METAL-IMPURITY INTERACTIONCRAIG BI.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 1; PP. 53-61; ABS. GER; BIBL. 15 REF.Article

A STUDY OF DEEP METAL-RELATED CENTRES IN GERMANIUM BY CAPACITANCE SPECTROSCOPYPEARTON SJ.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 499-503; BIBL. 17 REF.Article

DETERMINATION OF THE FREE ENERGY LEVEL OF DEEP CENTERS, WITH APPLICATION TO GAASPONS D.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 413-415; BIBL. 13 REF.Article

PHOTOCONDUCTION STUDIES IN PBI2 SINGLE CRYSTALS.CONSTANTINESCU M; BALTOG I; GHITA C et al.1978; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1978; VOL. 23; NO 1; PP. 31-34; ABS. FR.; BIBL. 4 REF.Article

SPECTRES OPTIQUES DES CENTRES D'IMPURETE AVEC DES POTENTIELS ADIABATIQUES A DOUBLE PUITSKULAGIN SA; OSAD'KO IS.1982; OPTIKA I SPEKTROSKOPIJA; ISSN 0030-4034; SUN; DA. 1982; VOL. 53; NO 1; PP. 169-171; BIBL. 7 REF.Article

EINE KANONISCHE TRANSFORMATIONALS LOESUNGSVORSCHLAG FUER EINE FUNKTIONALGLEICHUNG = TRANSFORMATION CANONIQUE POUR TENTER DE RESOUDRE UNE EQUATION FONCTIONNELLEWAHL F.1980; Z. NATURFORSCH., A; ISSN 0340-4811; DEU; DA. 1980; VOL. 35; NO 6; PP. 567-578; ABS. ENG; BIBL. 8 REF.Article

BANDE D'IMPURETE DANS GASB NON DOPEKOLOKOL'TSEV VN.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1978; VOL. 14; NO 3; PP. 407-410; BIBL. 21 REF.Article

COMPENSATION BY DEEP LEVELS IN SEMI-INSULATING GAASLOMBOS BA; YEMENIDJIAN N; AVEROUS M et al.1982; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 1; PP. 35-40; ABS. FRE; BIBL. 26 REF.Article

HYDROGEN PASSIVATION OF A BULK DONOR DEFECT (EC-0.36 EV) IN GAASPEARTON SJ.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4509-4511; BIBL. 7 REF.Article

IMPROVED THERMOMETRY FOR DEEP-LEVEL MEASUREMENTSPHILLIPS WE.1982; J. PHYS. E; ISSN 0022-3735; GBR; DA. 1982; VOL. 15; NO 5; PP. 499-501; BIBL. 12 REF.Article

A NOVEL PERTURBATIVE-VARIATIONAL APPROACH AND ITS APPLICATION TO THE IMPURITY STATES IN ANISOTROPIE CRYSTALSLEE YC; MEI WN; LIU KC et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 14; PP. L469-L477; BIBL. 8 REF.Article

DETERMINATION AMELIOREE DES PARAMETRES DES CENTRES LOCALISES D'APRES LES POINTS D'INFLEXION DES COURBES D'EXCITATION THERMOSTIMULEEBALADIN M.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 11; PP. 2216-2223; BIBL. 8 REF.Article

HYDROGEN PASSIVATION OF DEEP DONOR CENTRES IN HIGH-PURITY EPITAXIAL GAASPEARTON SJ; TAVENDALE AJ.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 16; PP. 715-716; BIBL. 8 REF.Article

DEEP LEVELS STUDIES OF N-FREE AND N-DOPED GAP GROWN BY TDM-CVPNISHIZAWA JI; KOIKE M; MIURA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 25-30; BIBL. 23 REF.Article

DEEP SULFUR-RELATED CENTERS IN SILICONGRIMMEISS HG; JANZEN E; SKARSTAM B et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4212-4217; BIBL. 29 REF.Article

DEEP LEVELS RELATED TO TRANSITION METALS IN SI UNDER HYDROSTATIC PRESSUREWUENSTEL K; KUMAGAI O; WAGNER P et al.1982; APPL. PHYS., A SOLIDS SURF.; ISSN 0721-7250; DEU; DA. 1982; VOL. 27; NO 4; PP. 251-256; BIBL. 25 REF.Article

CENTRE JAHN-TELLER PD+ DANS DU CHLORURE D'ARGENT POLYCRISTALLINLIPATOV VD.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 1; PP. 176-178; BIBL. 4 REF.Article

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