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Results 1 to 25 of 509

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INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI.TAN TY; GARDNER EE; TICE WK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 4; PP. 175-176; BIBL. 10 REF.Article

A MORE GENERALIZED ANALYSIS OF HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 367-375; ABS. FRE/GER; BIBL. 12 REF.Article

A NEW APPROACH TO LATTICE DAMAGE GETTERINGPEARCE CW; ZALECKAS VJ.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 8; PP. 1436-1437; BIBL. 5 REF.Article

ANALYSIS OF IRREVERSIBLE HYDROGEN TRAPPINGIINO M.1982; ACTA METALL.; ISSN 0001-6160; USA; DA. 1982; VOL. 30; NO 2; PP. 377-383; ABS. FRE/GER; BIBL. 9 REF.Article

DEEP TRAPPING STATES FOR HYDROGEN IN DEFORMED IRONKUMNICK AJ; JOHNSON HH.1980; ACTA METALL.; ISSN 0001-6160; USA; DA. 1980; VOL. 28; NO 1; PP. 33-39; ABS. FRE/GER; BIBL. 19 REF.Article

GETTERING OF SURFACE AND BULK IMPURITIES IN CZOCHRALSKI SILICON WAFERS.ROZGONYI GA; PEARCE CW.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 32; NO 11; PP. 747-749; BIBL. 18 REF.Article

GOLD SOLUBILITY IN SILICON AND GETTERING BY PHOSPHORUSBALDI L; CEROFOLINI GF; FERLA G et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 48; NO 2; PP. 523-532; ABS. FRE; BIBL. 19 REF.Article

ARGON IMPLANTATION GETTERING FOR A "THROUGH-OXIDE" ARSENIC-IMPLANTED LAYER.MURASE K; HARADA H.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4404-4406; BIBL. 12 REF.Article

RESONANCE ENERGY SHIFT FOR MOESSBAUER IMPURITY ATOMS TRAPPED BY VACANCIESTEWARI AK; ROY SK; BHATTACHARYA DL et al.1979; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1979; VOL. 95; NO 2; PP. 607-614; ABS. GER; BIBL. 8 REF.Article

AUTORADIOGRAPHIC DETECTION OF GETTER EFFECT OF ARGON-IMPLANTED LAYERS IN SILICON.RUNGE H; WORL H.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 2; PP. 509-512; ABS. ALLEM.; BIBL. 16 REF.Article

CORRELATIONS BETWEEN THE ELASTIC ENERGY TRANSFERRED IN SOLIDS BY IMPLANTED HYDROGEN IONS AND HYDROGEN TRAPPING.AKKERMAN AF.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 2; PP. K145-K147; BIBL. 5 REF.Article

IMPLANT ION COLLECTION IN THE PRESENCE OF RATIATION ENHANCED DIFFUSION AND PREFERENTIAL SPUTTERING OF IMPLANTCARTER G; WEBB R; COLLINS R et al.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 43; NO 4-5; PP. 125-132; BIBL. 25 REF.Article

TRAPPING AND RADIATION-INDUCED DETRAPPING OF HYDROGEN IN STAINLESS STEEL EXPOSED TO LIQUID LITHIUMMIKI T; IKEYA M; TOUGE M et al.1981; J. NUCL. MATER.; ISSN 0022-3115; NLD; DA. 1981; VOL. 101; NO 3; PP. 350-353; BIBL. 20 REF.Article

LOW-TEMPERATURE GETTERING OF C2 IN GAASMAGEE TJ; HUNG J; DELINE VR et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 1; PP. 53-55; BIBL. 10 REF.Article

GETTERING OF CR IN GAAS BY BACK SURFACE MECHANICAL DAMAGEMAGEE TJ; PENG J; HONG JD et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 169-172; ABS. GER; BIBL. 9 REF.Article

COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI". REPLY TO "COMMENT ON "GETTERING OF MOBILE OXYGEN AND DEFECT STABILITY WITHIN BACK-SURFACE DAMAGE REGIONS IN SI"SCHAAKE HF; MAGEE TJ; FURMAN BK et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1226-1228; BIBL. 11 REF.Article

POTENTIAL OF A POSITIVE TEST CHARGE IN GERMANIUM: APPLICATION TO HYDROGENFALICOV LM; JOOS B.1982; PHILOS MAG., A; ISSN 0141-8610; GBR; DA. 1982; VOL. 45; NO 2; PP. 255-260; BIBL. 16 REF.Article

NEUTRON ACTIVATION STUDY OF A GETTERING TREATMENT FOR CZOCHRALSKI SILICON SUBSTRATESKATZ LE; SCHMIDT PF; PEARCE CW et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 3; PP. 620-624; BIBL. 9 REF.Article

ATTACHMENT OF MOBILE PARTICLES TO NON-SATURABLE TRAPS. I: A THEORETICAL MODELVAN GORKUM AA; KORNELSEN EV.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 42; NO 1-2; PP. 93-111; BIBL. 21 REF.Article

CAPTURE RADII OF IMPURITIES IN ALUMINIUM = RAYON DE CAPTURE DES IMPURETES DANS L'ALUMINIUMPRAKASH S; LUCASSON P.1979; CRYST. LATTICE DEFECTS; GBR; DA. 1979; VOL. 8; NO 3; PP. 111-112; BIBL. 4 REF.Article

BACK SURFACE GETTERING OF AU IN GAASMAGEE TJ; PENG J; HONG JD et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 161-168; ABS. GER; BIBL. 9 REF.Article

THE EFFECTS OF IMPURITY TRAPPING ON IRRADIATION-INDUCED SWELLING AND CREEP.MANSUR LK; YOO MH.1978; J. MATER. NUCL.; NLD; DA. 1978; VOL. 74; NO 2; PP. 228-241; ABS. FRA/GER; BIBL. 22 REF.Article

HYDROGEN TRAPPING PHENOMENA IN CARBON STEELCHOO WY; JAI YOUNG LEE.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 7; PP. 1930-1938; BIBL. 26 REF.Article

PRECIPITATION OF HELIUM AT IMPLANTED SUBSTITUTIONAL SILVER ATOMS IN TUNGSTENVAN DER KOLK GJ; VAN VEEN A; CASPERS LM et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. K235-K238; BIBL. 11 REF.Article

GETTERISATION DU BORE IMPLANTE PAR DE FINES COUCHES DE SILICIUM DETRUITES PAR BOMBARDEMENT IONIQUEPAVLOV PV; KURIL'CHIK EV.1978; DOKL. AKAD. NAUK S.S.S.R.; SUN; DA. 1978; VOL. 241; NO 2; PP. 401-403; BIBL. 5 REF.Article

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