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PHOTOELECTRON AND AUGER SPECTROSCOPY OF INDIUM HALIDES, OXIDE AND SULFIDE COMPOUNDSNICHOLS GD; ZATKO DA.1979; INORG. NUCL. CHEM. LETTERS; GBR; DA. 1979; VOL. 15; NO 11-12; PP. 401-404; BIBL. 13 REF.Article

PHASENBEZIEHUNGEN IN SYSTEMEN IN2X3-INY3 SOWIE STRUKTURBEZIEHUNGEN, KRISTALLZUCHT UND OPTISCHE ABSORPTION VON VERBINDINGEN INXY (X=SE, TE; Y=CL, BR, I) = RELATIONS DE PHASES DANS LES SYSTEMES IN2X3-INY3 ET RELATIONS STRUCTURALES, CROISSANCE CRISTALLINE ET ABSORPTION OPTIQUE DES COMPOSES INXY (X=SE, TE; Y=CL, BR, I)KNIEP R; WILMS A; BEISTER J et al.1981; Z. NATURFORSCH., B; ISSN 0340-5087; DEU; DA. 1981; VOL. 36; NO 12; PP. 1520-1525; ABS. ENG; BIBL. 14 REF.Article

ATOMIC AND MOLECULAR ABSORPTION SPECTRA OF INDIUM IN AIR-ACETYLENE FLAME.HARAGUCHI H; FUWA K.1975; SPECTROCHIM. ACTA, B; G.B.; DA. 1975; VOL. 30; NO 12; PP. 535-545; BIBL. 20 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

SUR L'INTERACTION DE L'OXYDE D'INDIUM AVEC LE CHLORE D'AMMONIUM EN PRESENCE DE ZNOERSHOVA AT; KONAKOVA VA; IVASHENTSEV YA I et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., CVETN. METALLURG.; S.S.S.R.; DA. 1977; NO 3; PP. 54-57; BIBL. 7 REF.Article

ACTIVATED METALS. X. DIRECT SYNTHESIS OF DIPHENYLINDIUM IODIDE AND DITOLYLINDIUM IODIDE FROM ACTIVATED INDIUM METALLI CHUNG CHAO; RIEKE RD.1975; SYNTHES. REACTIV. INORG. METAL-ORG. CHEM.; U.S.A.; DA. 1975; VOL. 5; NO 3; PP. 165-173; BIBL. 11 REF.Article

ETUDE SPECTROSCOPIQUE DU COMPORTEMENT DES COMPOSES D'INDIUM DANS UNE FLAMMEDAIDOJI H.1980; NIPPON KAGAKU KAISHI (1972); ISSN 0369-4577; JPN; DA. 1980; NO 11; PP. 1718-1722; ABS. ENG; BIBL. 25 REF.Article

SELECTIVELY-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURE FIELD EFFECT TRANSISTORPEARSALL TP; HENDEL R; O'CONNOR P et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 1; PP. 5-8; BIBL. 14 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

A3IN2CL9 (A=CS, RB, IN, TL) UND CS3IN2BR9-XCL (X=0, 3, 6, 7, 8) = A3IN2CL9 (A=CS, RB, IN, TL) ET CS3IN2BR9-XCL (X=0,3, 6, 7, 8)MEYER G.1978; Z. ANORG. ALLG. CHEM.; DDR; DA. 1978; VOL. 445; NO 8; PP. 140-146; ABS. ENG; BIBL. 31 REF.Article

CATION AND ANION IDEAL VACANCY INDUCED GAP LEVELS IN SOME III-V COMPOUND SEMICONDUCTORSDAS SARMA S; MADHUKAR A.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 3; PP. 183-186; BIBL. 18 REF.Article

X-RAY L1 SPECTRA AND XPS INVESTIGATION OF THE ELECTRONIC STRUCTURE OF INDIUM COMPOUNDSGUSATINSKII AN; BLOKHIN MA; SHUMICHEN P et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. 405-410; ABS. RUS; BIBL. 7 REF.Article

STABILITY AND STRUCTURE OF NONCENTROSYMMETRIC HEXAGONAL LNINO3 (LN=EU, GD, TB, DY, HO, Y).PISTORIUS CWFT; KRUGER GJ.1976; J. INORG. NUCL. CHEM.; G.B.; DA. 1976; VOL. 38; NO 8; PP. 1471-1475; BIBL. 19 REF.Article

AN ADDITIVE TREATMENT OF 115IN NUCLEAR QUADRUPOLE COUPLING CONSTANTS FOR ORGANOINDIUM COMPOUNDS.BANCROFT GM; SHAM TK.1977; J. MAGNET. RESON.; U.S.A.; DA. 1977; VOL. 25; NO 1; PP. 83-90; BIBL. 33 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

FLOTATION SEPARATION OF INDIUM THIOCYANATE COMPLEXES FROM ACID SOLUTIONSMAL'TSEV GI; SVIRIDOV VV; SKRYLEV LD et al.1980; ZH. PRIKL. KHIM.; SUN; DA. 1980-10; VOL. 53; NO 10; PP. 2164-2170; BIBL. 13 REF.Article

DECOMPOSITION THERMIQUE DE COMPOSES TRIALKYLES DE L'INDIUMALEKSANDROV YU A; DRUZHKOV ON; BARYSHNIKOV YU YU et al.1980; ZH. OBSHCH. KHIM.; SUN; DA. 1980; VOL. 50; NO 12; PP. 2642-2645; BIBL. 8 REF.Article

LASING CHARACTERISTICS OF GAINASP/INP NARROW PLANAR STRIPE LASERSOE K; ANDO S; SUGIYAMA K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3541-3544; BIBL. 11 REF.Article

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