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ATOMIC AND MOLECULAR ABSORPTION SPECTRA OF INDIUM IN AIR-ACETYLENE FLAME.HARAGUCHI H; FUWA K.1975; SPECTROCHIM. ACTA, B; G.B.; DA. 1975; VOL. 30; NO 12; PP. 535-545; BIBL. 20 REF.Article

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DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

A₃IN₂CL₉ (A=CS, RB, IN, TL) UND CS₃IN₂BR_9-XCL (X=0, 3, 6, 7, 8) = A₃IN₂CL₉ (A=CS, RB, IN, TL) ET CS₃IN₂BR_9-XCL (X=0,3, 6, 7, 8)MEYER G.1978; Z. ANORG. ALLG. CHEM.; DDR; DA. 1978; VOL. 445; NO 8; PP. 140-146; ABS. ENG; BIBL. 31 REF.Article

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X-RAY L₁ SPECTRA AND XPS INVESTIGATION OF THE ELECTRONIC STRUCTURE OF INDIUM COMPOUNDSGUSATINSKII AN; BLOKHIN MA; SHUMICHEN P et al.1981; PHYS. STATUS SOLIDI (B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 2; PP. 405-410; ABS. RUS; BIBL. 7 REF.Article

STABILITY AND STRUCTURE OF NONCENTROSYMMETRIC HEXAGONAL LNINO₃ (LN=EU, GD, TB, DY, HO, Y).PISTORIUS CWFT; KRUGER GJ.1976; J. INORG. NUCL. CHEM.; G.B.; DA. 1976; VOL. 38; NO 8; PP. 1471-1475; BIBL. 19 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

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NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

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FLOTATION SEPARATION OF INDIUM THIOCYANATE COMPLEXES FROM ACID SOLUTIONSMAL'TSEV GI; SVIRIDOV VV; SKRYLEV LD et al.1980; ZH. PRIKL. KHIM.; SUN; DA. 1980-10; VOL. 53; NO 10; PP. 2164-2170; BIBL. 13 REF.Article

DECOMPOSITION THERMIQUE DE COMPOSES TRIALKYLES DE L'INDIUMALEKSANDROV YU A; DRUZHKOV ON; BARYSHNIKOV YU YU et al.1980; ZH. OBSHCH. KHIM.; SUN; DA. 1980; VOL. 50; NO 12; PP. 2642-2645; BIBL. 8 REF.Article

LASING CHARACTERISTICS OF GAINASP/INP NARROW PLANAR STRIPE LASERSOE K; ANDO S; SUGIYAMA K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3541-3544; BIBL. 11 REF.Article

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INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENTMITO I; KITAMURA M; KAEDE K et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 2-3; BIBL. 4 REF.Article

GA_XIN_1-XAS_YP_1-Y/INP TERRACED SUBSTRATE SINGLE-MODE LASERWAKAO K; MORIKI K; KITAMURA M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 6; PP. 1009-1013; BIBL. 22 REF.Article