PHOTOELECTRON AND AUGER SPECTROSCOPY OF INDIUM HALIDES, OXIDE AND SULFIDE COMPOUNDSNICHOLS GD; ZATKO DA.1979; INORG. NUCL. CHEM. LETTERS; GBR; DA. 1979; VOL. 15; NO 11-12; PP. 401-404; BIBL. 13 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

SUR L'INTERACTION DE L'OXYDE D'INDIUM AVEC LE CHLORE D'AMMONIUM EN PRESENCE DE ZNOERSHOVA AT; KONAKOVA VA; IVASHENTSEV YA I et al.1977; IZVEST. VYSSH. UCHEBN. ZAVED., CVETN. METALLURG.; S.S.S.R.; DA. 1977; NO 3; PP. 54-57; BIBL. 7 REF.Article

ACTIVATED METALS. X. DIRECT SYNTHESIS OF DIPHENYLINDIUM IODIDE AND DITOLYLINDIUM IODIDE FROM ACTIVATED INDIUM METALLI CHUNG CHAO; RIEKE RD.1975; SYNTHES. REACTIV. INORG. METAL-ORG. CHEM.; U.S.A.; DA. 1975; VOL. 5; NO 3; PP. 165-173; BIBL. 11 REF.Article

ETUDE SPECTROSCOPIQUE DU COMPORTEMENT DES COMPOSES D'INDIUM DANS UNE FLAMMEDAIDOJI H.1980; NIPPON KAGAKU KAISHI (1972); ISSN 0369-4577; JPN; DA. 1980; NO 11; PP. 1718-1722; ABS. ENG; BIBL. 25 REF.Article

A₃IN₂CL₉ (A=CS, RB, IN, TL) UND CS₃IN₂BR_9-XCL (X=0, 3, 6, 7, 8) = A₃IN₂CL₉ (A=CS, RB, IN, TL) ET CS₃IN₂BR_9-XCL (X=0,3, 6, 7, 8)MEYER G.1978; Z. ANORG. ALLG. CHEM.; DDR; DA. 1978; VOL. 445; NO 8; PP. 140-146; ABS. ENG; BIBL. 31 REF.Article

AN ADDITIVE TREATMENT OF ¹¹⁵IN NUCLEAR QUADRUPOLE COUPLING CONSTANTS FOR ORGANOINDIUM COMPOUNDS.BANCROFT GM; SHAM TK.1977; J. MAGNET. RESON.; U.S.A.; DA. 1977; VOL. 25; NO 1; PP. 83-90; BIBL. 33 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

FLOTATION SEPARATION OF INDIUM THIOCYANATE COMPLEXES FROM ACID SOLUTIONSMAL'TSEV GI; SVIRIDOV VV; SKRYLEV LD et al.1980; ZH. PRIKL. KHIM.; SUN; DA. 1980-10; VOL. 53; NO 10; PP. 2164-2170; BIBL. 13 REF.Article

DECOMPOSITION THERMIQUE DE COMPOSES TRIALKYLES DE L'INDIUMALEKSANDROV YU A; DRUZHKOV ON; BARYSHNIKOV YU YU et al.1980; ZH. OBSHCH. KHIM.; SUN; DA. 1980; VOL. 50; NO 12; PP. 2642-2645; BIBL. 8 REF.Article

STRUCTURE AND PHASE-BOUNDARY ENERGIES OF THE DIRECTIONALLY SOLIDIFIED INSB-MNSB-INSB-NISB, INSB-TESB AND INSB-CRSB EUTECTIC ALLOYS.UMEHARA Y; KODA S.1975; METALLOGRAPHY; U.S.A.; DA. 1975; VOL. 7; NO 4; PP. 313-331; BIBL. 22 REF.Article

DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTUREYAMAKOSHI S; SANADA T; WADA O et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 144-146; BIBL. 16 REF.Article

DUAL WAVELENGTH INGAASP/INP TJS LASERSSAKAI S; AOKI T; UMENO M et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 18-20; BIBL. 6 REF.Article

GAINASP/INP DH LASER ON SEMI-INSULATING INP SUBSTRATE WITH TERRACE STRUCTUREMATSOKA T; SUZUKI Y; NOGUCHI Y et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 359-361; BIBL. 5 REF.Article

INGAASP/INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA =1.5 MU M) WITH CHEMICALLY ETCHED MIRRORSADACHI S; KAWAGUCHI H; TAKAHEI K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5843-5845; BIBL. 13 REF.Article

ANALYSIS OF ELECTRICAL, THRESHOLD, AND TEMPERATURE CHARACTERISTICS OF INGAASP/INP DOUBLE-HETEROJUNCTION LASERSYANO M; IMAI H; TAKUSAGAWA M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 9; PP. 1954-1963; BIBL. 45 REF.Article

NEW WAVELENGTH DEMULTIPLEXING INGAASP/INP PHOTODIODESTOBE M; SAKAI S; UMENO M et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 213-216; BIBL. 8 REF.Conference Paper

DONNEES CRISTALLOGRAPHIQUES DU COMPOSE INCL₃.SEYED SADJADI MA; VITSE P.1978; J. APPL. CRYSTALLOGR.; DNK; DA. 1978; VOL. 11; NO 4; PP. 292; BIBL. 1 REF.Article