Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("INDIUM ANTIMONIDES")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2625

  • Page / 105

Export

Selection :

  • and

LONG WAVELENGTH PB1-XSNXTE HOMOSTRUCTURE DIODE LASERS HAVING A GALLIUM-DOPED CLADDING LAYERZUSSMAN A; FEIT Z; EGER D et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 344-346; BIBL. 16 REF.Article

ETUDE DE LA STRUCTURE DE BANDES DES SOLUTIONS SOLIDES DE INPXASYSB1-X-YGRINYAEV SN; DOLGINOV LM; IL'IN MA et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 4; PP. 725-727; BIBL. 10 REF.Article

OPTICAL BISTABILITY IN INSB AT ROOM TEMPERATURE WITH TWO-PHOTON EXCITATIONKAR AK; MATHEW JGH; SMITH SD et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 334-336; BIBL. 10 REF.Article

PHOTO-EXCITED ACOUSTIC PHONONS IN INSB AND GEMADORE G; CHEEKE JDN; HUET D et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. K1-K4; BIBL. 7 REF.Article

A TECHNIQUE TO IMPROVE THE SENSITIVITY OF THIN FILM INSB MAGNETORESISTORSNADKARNI GS.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 87; NO 1; PP. 17-21; BIBL. 8 REF.Article

PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

AMELIORATION DE LA FORMATION D'UN SYSTEME MOS A BASE D'INSBROMANOV OV; SAZONOV SG; MOTALEVA NV et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 165-169; BIBL. 14 REF.Article

OBSERVATION OF DEFECTS IN AN INSB SINGLE CRYSTAL BY NEUTRON TOPOGRAPHYCHALUPA B; MICHALEC R; HASKOVA B et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 7; PP. K65-K67; BIBL. 4 REF.Article

INSTABILITE ELECTRIQUE ET DE TEMPERATURE DE INSB N DANS UN CHAMP ELECTRIQUE CONSTANTANTONOV VV; KATS LI.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 6; PP. 1050-1053; BIBL. 4 REF.Article

THEORY OF ELECTRONIC PROPERTIES OF N-CHANNEL INVERSION LAYERS ON NARROW-GAP SEMICONDUCTORS. II. INTER-SUBBAND OPTICAL ABSORPTION ON INSBTAKADA Y.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 6; PP. 1998-2005; BIBL. 19 REF.Article

PARAMETRES EQUIVALENTS DES STRUCTURES MOS A L'ANTIMONIURE D'INDIUMVERSHININ LA; DAVYDOV VN; USHERENKO AA et al.1983; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1983; VOL. 28; NO 2; PP. 346-350; BIBL. 8 REF.Article

CHARACTERISTICS OF INSB MIXERS AND BACKWARD WAVE OSCILLATORS IN A SUBMM HETERODYNE RECEIVERVAN VLIET AHF; DEGRAAUW T; LIDHOLM S et al.1982; INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES; ISSN 0195-9271; USA; DA. 1982; VOL. 3; NO 6; PP. 825-837; BIBL. 7 REF.Article

PROCESSUS DE GENERATION DANS LES STRUCTURES MIS EN INSB EN REGIME D'APPAUVRISSEMENT HORS D'EQUILIBREKURYSHEV GL; KHALIULLIN NI; POSTNIKOV KO et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 4; PP. 654-658; BIBL. 5 REF.Article

CALCULATIONS OF DEFORMATION-POTENTIAL CONSTANTS IN INSBGORCZYCA I.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 1; PP. 205-209; ABS. GER; BIBL. 21 REF.Article

MAGNETOPLASMA SURFACE WAVES OF A DEGENERATE SEMICONDUCTOR IN THE FARADAY GEOMETRY: EFFECT OF THE PRESENCE OF A METALLIC SCREENYI KS; QUINN JJ; HALEVI P et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 12; PP. 6247-6253; BIBL. 15 REF.Article

ENHANCEMENT OF A THIN FILM INDIUM ANTIMONIDE ON LITHIUM NIOBATE CONVOLVER OUTPUT BY TRANSVERSE BIASINGONISHI S; ESCHWEI M; EL ASIR B et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 5; PART. 2; PP. 273-274; BIBL. 7 REF.Article

DIFFERENCE-FREQUENCY VARIATION OF THE FREE-CARRIER-INDUCED, THIRD-ORDER NONLINEAR SUSCEPTIBILITY IN N-INSBYUEN SY; WOLFF PA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 457-459; BIBL. 9 REF.Article

THE DECORATION OF STEPS ON INSB CLEAVAGE FACESMERTENS G; KREUTZ E; REICHELT K et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 3; PP. 639-640; BIBL. 3 REF.Article

COMPLEXES DE DONNEURS AVEC DES ATOMES INTERSTITIEL D'INDIUM SOUS IRRADIATION GAMMA A BASSE TEMPERATURE DE L'ANTIMONIURE D'INDIUMZAITOV FA; GORSHKOVA OV; POLYAKOV A YA et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 11; PP. 1781-1783; BIBL. 10 REF.Article

ASYMMETRIC CURRENT EFFECTS OF 1/F NOISE IN METAL TO N-INSB CONTACTS WITH AN APPLIED MAGNETIC FIELDVANDE VOORDE P; LOVE WF.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 575-576; BIBL. 3 REF.Article

AMPLIFICATION OF ACOUSTIC WAVES IN A PIEZOELECTRIC SEMICONDUCTOR BY APPLICATIONS OF AN ELECTRON DENSITY GRADIENTSHARMA SK; PALANICHAMY P.1980; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. K153-K157; BIBL. 7 REF.Article

HOPPING CONDUCTION IN N-TYPE INDIUM ANTIMONIDE BELOW IKTOKUMOTO H; MANSFIELD R; LEA MJ et al.1982; PHILOSOPHICAL MAGAZINE. B. ELECTRONIC, OPTICAL AND MAGNETIC PROPERTIES; ISSN 0141-8637; GBR; DA. 1982; VOL. 46; NO 2; PP. 93-113; BIBL. 19 REF.Article

ON THE MECHANISM OF ANODIC OXIDATION OF INSBMATSAS EP; ANTONYUK VN; BIBIK VF et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 69; NO 2; PP. K229-K231; BIBL. 6 REF.Article

HIGHLY NONLINEAR INTERACTIONS IN N-TYPE INSB WITH A PICOSECOND CO2 LASERKWOK HS.1982; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 2; PP. 283-289; BIBL. 36 REF.Article

New optical structure near the E1 transitions of InSb/InAlSb quantum wellsCERDEIRA, F; PINCZUK, A; CHIU, T. H et al.Physical review. B, Condensed matter. 1985, Vol 32, Num 2, pp 1390-1393, issn 0163-1829Article

  • Page / 105