PHOTO-EXCITED ACOUSTIC PHONONS IN INSB AND GEMADORE G; CHEEKE JDN; HUET D et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 112; NO 1; PP. K1-K4; BIBL. 7 REF.Article

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PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

AMELIORATION DE LA FORMATION D'UN SYSTEME MOS A BASE D'INSBROMANOV OV; SAZONOV SG; MOTALEVA NV et al.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; NO 2; PP. 165-169; BIBL. 14 REF.Article

OBSERVATION OF DEFECTS IN AN INSB SINGLE CRYSTAL BY NEUTRON TOPOGRAPHYCHALUPA B; MICHALEC R; HASKOVA B et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 7; PP. K65-K67; BIBL. 4 REF.Article

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THEORY OF ELECTRONIC PROPERTIES OF N-CHANNEL INVERSION LAYERS ON NARROW-GAP SEMICONDUCTORS. II. INTER-SUBBAND OPTICAL ABSORPTION ON INSBTAKADA Y.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 6; PP. 1998-2005; BIBL. 19 REF.Article

PARAMETRES EQUIVALENTS DES STRUCTURES MOS A L'ANTIMONIURE D'INDIUMVERSHININ LA; DAVYDOV VN; USHERENKO AA et al.1983; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1983; VOL. 28; NO 2; PP. 346-350; BIBL. 8 REF.Article

CHARACTERISTICS OF INSB MIXERS AND BACKWARD WAVE OSCILLATORS IN A SUBMM HETERODYNE RECEIVERVAN VLIET AHF; DEGRAAUW T; LIDHOLM S et al.1982; INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES; ISSN 0195-9271; USA; DA. 1982; VOL. 3; NO 6; PP. 825-837; BIBL. 7 REF.Article

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CALCULATIONS OF DEFORMATION-POTENTIAL CONSTANTS IN INSBGORCZYCA I.1981; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1981; VOL. 108; NO 1; PP. 205-209; ABS. GER; BIBL. 21 REF.Article

MAGNETOPLASMA SURFACE WAVES OF A DEGENERATE SEMICONDUCTOR IN THE FARADAY GEOMETRY: EFFECT OF THE PRESENCE OF A METALLIC SCREENYI KS; QUINN JJ; HALEVI P et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 12; PP. 6247-6253; BIBL. 15 REF.Article

ENHANCEMENT OF A THIN FILM INDIUM ANTIMONIDE ON LITHIUM NIOBATE CONVOLVER OUTPUT BY TRANSVERSE BIASINGONISHI S; ESCHWEI M; EL ASIR B et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 5; PART. 2; PP. 273-274; BIBL. 7 REF.Article

DIFFERENCE-FREQUENCY VARIATION OF THE FREE-CARRIER-INDUCED, THIRD-ORDER NONLINEAR SUSCEPTIBILITY IN N-INSBYUEN SY; WOLFF PA.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 6; PP. 457-459; BIBL. 9 REF.Article

THE DECORATION OF STEPS ON INSB CLEAVAGE FACESMERTENS G; KREUTZ E; REICHELT K et al.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 3; PP. 639-640; BIBL. 3 REF.Article

COMPLEXES DE DONNEURS AVEC DES ATOMES INTERSTITIEL D'INDIUM SOUS IRRADIATION GAMMA A BASSE TEMPERATURE DE L'ANTIMONIURE D'INDIUMZAITOV FA; GORSHKOVA OV; POLYAKOV A YA et al.1982; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 11; PP. 1781-1783; BIBL. 10 REF.Article

ASYMMETRIC CURRENT EFFECTS OF 1/F NOISE IN METAL TO N-INSB CONTACTS WITH AN APPLIED MAGNETIC FIELDVANDE VOORDE P; LOVE WF.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 7; PP. 575-576; BIBL. 3 REF.Article

AMPLIFICATION OF ACOUSTIC WAVES IN A PIEZOELECTRIC SEMICONDUCTOR BY APPLICATIONS OF AN ELECTRON DENSITY GRADIENTSHARMA SK; PALANICHAMY P.1980; PHYS. STATUS SOLIDI(A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. K153-K157; BIBL. 7 REF.Article

DLTS STUDIES ON INSB P-N⁺ DIODESTSUKIOKA K; MIYAZAWA H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 8; PART. 2; PP. 526-528; BIBL. 5 REF.Article

EFFECT OF SIZE QUANTIZATION ON THE ELECTRONIC HEAT CAPACITY IN ULTRATHIN FILMS OF NON-PARABOLIC SEMICONDUCTORSGHATAK KP; GHOSH KK; MUKHERJEE HM et al.1982; PHYS. STATUS SOLIDI(B), BASIC RES.; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 1; PP. 323-330; ABS. GER; BIBL. 14 REF.Article

MANY-BODY THEORY OF OPTICAL HISTABILITY IN SEMICONDUCTORSLOEWENAU JP; SCHMITT RINK S; HAUG H et al.1982; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 20; PP. 1511-1514; BIBL. 14 REF.Article

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GENERATION D'ETATS SUPERFICIELS DANS LES STRUCTURES MOS A L'ANTIMONIURE D'INDIUMDAVYDOV VN; LOSKUTOVA EA.1983; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1983; VOL. 12; NO 1; PP. 37-41; BIBL. 15 REF.Article

DEPOT DE STRUCTURES MONOCRISTALLINES, A COUCHES, SUR UNE SURFACE NON ORIENTANTEGAPONOV SV; GUSEV SA; LUSKIN BM et al.1982; PRIBORY I TEHNIKA EKSPERIMENTA; ISSN 0032-8162; SUN; DA. 1982; NO 2; PP. 176-178; BIBL. 5 REF.Article