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OPTICALLY INDUCED AVALANCHE IN INSBGRAVE T; SCHOELL E; WURZ H et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 9; PP. 1693-1711; BIBL. 27 REF.Article

FILAMENTATION OF HELICON WAVES IN SEMICONDUCTORSSALIMULLAH M; ALAM MN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4534-4537; BIBL. 10 REF.Article

CALCUL DU DOMAINE D'HOMOGENEITE DE L'ANTIMONIURE D'INDIUMZAITOV FA; GORSHKOVA OV; POLYAKOV A YA et al.1981; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 9; PP. 1541-1544; BIBL. 19 REF.Article

INDIUM ANTIMONIDE AS AN X-RAY MONOCHROMATORGOHSHI Y; HIRAO O; MURATA M et al.1975; X-RAY SPECTROM.; G.B.; DA. 1975; VOL. 4; NO 2; PP. 74-76Article

MAGNETO-OPTICAL DETECTION OF DEEP ACCEPTOR IMPURITIES IN P-INSBLITTLER CL; SEILER DG; KAPLAN R et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 880-882; BIBL. 24 REF.Article

EXCITATION OF MAGNETOACOUSTIC WAVES BY TWO MICROWAVE BEAMS IN INSBMAHESHWARI KP; GANESH TAREY.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 116; NO 1; PP. 339-346; ABS. GER; BIBL. 12 REF.Article

OPTICAL BISTABILITY IN INSB AT ROOM TEMPERATURE WITH TWO-PHOTON EXCITATIONKAR AK; MATHEW JGH; SMITH SD et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 4; PP. 334-336; BIBL. 10 REF.Article

THE INTERNAL PHOTOELECTRIC EFFECT IN INSB WITH L-BAND PARTICIPATIONBEATTIE AR.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2265-2280; BIBL. 13 REF.Article

DEVELOPPEMENT DU SPECTRE D'UN SIGNAL PENDANT LA GENERATION A PARCOURS MULTIPLES D'ONDES ACOUSTIQUES DANS LES SEMICONDUCTEURS PIEZOELECTRIQUESMANSFEL'D GD; RUBTSOV AA.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2007-2010; BIBL. 10 REF.Article

HIGH-RESOLUTION TWO-PHOTON SPECTROSCOPY IN INSB AT MILLIWATT CW POWERS IN A MAGNETIC FIELDSEILER DG; GOODWIN MW; WEILER MH et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6806-6809; BIBL. 21 REF.Article

COMPOSANTE ELECTRONIQUE DE L'EFFET PHOTOELASTIQUE DANS LES SEMICONDUCTEURS INTRINSEQUESILISAVSKIJ YU V; KULAKOVA LA.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 11; PP. 3299-3307; BIBL. 12 REF.Article

DISTRIBUTION DANS LE VOLUME DES PROPRIETES ELECTRIQUES D'UN ANTIMONIURE D'INDIUM NON DOPEYUROVA ES; IVLEVA VS; SELYANINA VI et al.1981; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 9; PP. 1545-1549; BIBL. 5 REF.Article

PROCESSUS DE FORMATION DES DEFAUTS DE STRUCTURE DANS L'ANTIMONIURE D'INDIUM LORS DE L'IRRADIATION GAMMAABDULLAEV A; VITOVSKIJ NA; MASHOVETS TV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 2; PP. 282-286; BIBL. 14 REF.Article

SATURATION OF INTERBAND MAGNETO-ABSORPTION IN INSBDENNIS RB; MACKENZIE HA; SMITH SD et al.1982; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1982; VOL. 41; NO 5; PP. 345-349; BIBL. 13 REF.Article

RECOMBINAISON AUGER DANS LES SEMICONDUCTEURS DE TYPE P A BANDE ETROITEGEL'MONT BL.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1316-1319; BIBL. 7 REF.Article

DISLOCATION VELOCITIES IN INDIUM ANTIMONIDE.MIHARA M; NINOMIYA T.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 1; PP. 43-52; ABS. ALLEM.; BIBL. 19 REF.Article

MECANISME DE CREATION PAR IONISATION DE DEFAUTS DE STRUCTURE DANS L'ANTIMONIURE D'INDIUMABDULLAEV A; VITOVSKIJ NA; MASHOVETS TV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 68-75; BIBL. 20 REF.Article

SYSTEMATIC CONTROL OF DOPING CHARACTERISTICS OF N-INSB BY NUCLEAR REACTIONS.KUCHAR F; FANTNER E; BAUER G et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 24; NO 2; PP. 513-518; ABS. ALLEM.; BIBL. 11 REF.Article

IMPACT IONISATION PROBABILITY IN INSBDEVREESE JT; VAN WELZENIS RG; EVRARD RP et al.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 3; PP. 125-132; BIBL. 14 REF.Article

CORROSION ET PROPRIETES DES PLANS (111) DE INSBMAZURKEVICH YA S; ZOZULYA NI; KOSTYUK LS et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 611-616; H.T. 1; BIBL. 14 REF.Article

EXCITATION DE POLARITONS SUPERFICIELS PAR LE RAYONNEMENT LASER DANS DES SEMICONDUCTEURS A BANDE INTERDITE ETROITEVO KHONG AN.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 1; PP. 82-88; BIBL. 13 REF.Article

THRESHOLDS FOR IMPACT IONISATION IN INSB AT 77KVAN WELZENIS RG.1981; APPL. PHYS., A, SOLIDS SURF.; DEU; DA. 1981; VOL. 26; NO 3; PP. 157-163; BIBL. 21 REF.Article

PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

DETERMINATION DES PARAMETRES DES COUCHES MINCES A LA SURFACE DE L'ANTIMONIURE D'INDIUMANTONYUK VN; MATSAS EP.1980; OPT. SPEKTROSK.; ISSN 0030-4034; SUN; DA. 1980; VOL. 49; NO 6; PP. 1155-1158; BIBL. 5 REF.Article

ETUDE DE LA FACE (110) DU CRISTAL D'ANTIMONIURE D'INDIUM PAR LA METHODE DE DIFFRACTION DES ELECTRONS LENTSGALAEV AA; GORELIK SS; PARKHOMENKO YU N et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 217; NO 6; PP. 1300-1301; H.T. 2; BIBL. 3 REF.Article

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