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POSTGROWTH HEAT-TREATMENT EFFECTS IN HIGH-PURITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47ASRAO MV; BHATTACHARYA PK.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 196-197; BIBL. 7 REF.Article

OPTICAL RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTODIODESFORREST SR; KIM OK; SMITH RG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 95-98; BIBL. 10 REF.Article

RECOMBINATION ENHANCED DISLOCATION GLIDE IN INP SINGLE CRYSTALSMAEDA K; TAKEUCHI S.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 664-666; BIBL. 16 REF.Article

GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

INP GUNN OSCILLATORS IN V-BANDSOWERS JJ; JANIS BA; CROWLEY JD et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 19; PP. 708-709; BIBL. 4 REF.Article

PICOSECOND CORRELATION MEASUREMENTS OF INDIUM PHOSPHIDE PHOTOCONDUCTORSDOWNEY PM; AUSTON DH; SMITH PR et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 215-217; BIBL. 4 REF.Article

OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION-RF PERFORMANCESFRISCOURT MR; ROLLAND PA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 135-137; BIBL. 8 REF.Article

DECAPAGE IONIQUE DES HETEROJONCTIONS INP-INGAASPZARGAR'YANTS MN; KRAPUKHIN VV; KRYKANOV IA et al.1982; ZURNAL TEHNICESKOJ FIZIKI; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 10; PP. 2102-2104; BIBL. 9 REF.Article

MILLIMETER-WAVE INP IMAGE LINE SELF-MIXING GUNN OSCILLATORDIXON S JR; JACOBS H.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 9; PP. 958-961; BIBL. 7 REF.Article

COMPARATIVE LOGIC FIGURE OF MERIT OF CURRENT HIGH-SPEED TRANSISTORSGIACOLETTO LJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 908-910; BIBL. 4 REF.Article

OPTICALLY PUMPED LASER ACTION AT 77K OF INGAP/INGAAIP DOUBLE HETEROSTRUCTURES GROWN BY MBEASAHI H; KAWAMURA Y; NAGAI H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 62-63; BIBL. 5 REF.Article

MOCVD-GROWN AI0.5IN0.5P-GA0.5IN0.5 DOUBLE HETEROSTRUCTURE LASERS OPTICALLY PUMPED AT 90 KSUZUKI T; HINO I; GOMYO A et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PART. 2; PP. L731-L733; BIBL. 10 REF.Article

DEFECTS INDUCED BY ELECTRON IRRADIATION IN INPSUSKI J; BOURGOIN JC; LIM H et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2852-2854; BIBL. 8 REF.Article

INSULATED GATE INVERSION AND ACCUMULATION MODE CHARGE-COUPLED DEVICES ON INPLILE DL; COLLINS DA.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 53-60; BIBL. 19 REF.Article

THE ANODIC OXIDE OF INP AND ITS APPLICATION TO INP METAL/INSULATOR/SEMICONDUCTOR FIELD EFFECT TRANSISTORSYAMAMOTO A; SHIBUKAWA A; YAMAGUCHI M et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 95-105; BIBL. 27 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

INDIUM PHOSPHIDE TRANSFERRED ELECTRON OSCILLATORS FOR MILLIMETRE-WAVE FREQUENCIESEDDISON IG; DAVIES I.1982; RADIO AND ELECTRONIC ENGINEER; ISSN 0033-7722; GBR; DA. 1982; VOL. 52; NO 11-12; PP. 529-533; BIBL. 9 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CAPACITE CALORIFIQUE, ENERGIE LIBRE GIBBS, ENTHALPIE ET ENTROPIE DES SOLUTIONS SOLIDES (GAAS)X(INP)1-XSIROTA NN; ANTYUKHOV AM; NOVIKOV VV et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 9; PP. 2348-2350; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

THERMAL OXIDATION OF INP IN PHOSPHORUS PENTOXIDE VAPORYAMAGUCHI M.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4885-4887; BIBL. 8 REF.Article

FACTORS INFLUENCING THE PERFORMANCE OF INP METAL INSULATOR/SEMICONDUCTOR FIELD EFFECT TRANSISTORSCAMERON DC; IRVING LD; WHITEHOUSE CR et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 61-70; BIBL. 24 REF.Article

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