OPTICAL RESPONSE TIME OF IN_0.53GA_0.47AS/INP AVALANCHE PHOTODIODESFORREST SR; KIM OK; SMITH RG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 95-98; BIBL. 10 REF.Article

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INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

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COMPARATIVE LOGIC FIGURE OF MERIT OF CURRENT HIGH-SPEED TRANSISTORSGIACOLETTO LJ.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 5; PP. 908-910; BIBL. 4 REF.Article

MOCVD-GROWN AI_0.5IN_0.5P-GA_0.5IN_0.5 DOUBLE HETEROSTRUCTURE LASERS OPTICALLY PUMPED AT 90 KSUZUKI T; HINO I; GOMYO A et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 12; PART. 2; PP. L731-L733; BIBL. 10 REF.Article

DEFECTS INDUCED BY ELECTRON IRRADIATION IN INPSUSKI J; BOURGOIN JC; LIM H et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2852-2854; BIBL. 8 REF.Article

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THE ANODIC OXIDE OF INP AND ITS APPLICATION TO INP METAL/INSULATOR/SEMICONDUCTOR FIELD EFFECT TRANSISTORSYAMAMOTO A; SHIBUKAWA A; YAMAGUCHI M et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 95-105; BIBL. 27 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

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MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CAPACITE CALORIFIQUE, ENERGIE LIBRE GIBBS, ENTHALPIE ET ENTROPIE DES SOLUTIONS SOLIDES (GAAS)_X(INP)_1-XSIROTA NN; ANTYUKHOV AM; NOVIKOV VV et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 9; PP. 2348-2350; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

THERMAL OXIDATION OF INP IN PHOSPHORUS PENTOXIDE VAPORYAMAGUCHI M.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 7; PP. 4885-4887; BIBL. 8 REF.Article

IMPACT IONIZATION IN (100)-, AND (111)-ORIENTED INP AVALANCHE PHOTODIODESARMIENTO CA; GROVES SH.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 43; NO 2; PP. 198-200; BIBL. 25 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHTWADA O; MAJERFELD A; ROBSON PN et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 381-387; BIBL. 37 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

AU/BE OHMIC CONTACTS TO P-TYPE INDIUM PHOSPHIDEVALOIS AJ; ROBINSON GY.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 10; PP. 973-977; BIBL. 11 REF.Article