Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("INDIUM PHOSPHURE")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 11485

  • Page / 460

Export

Selection :

  • and

INP-IN1-XGAXASYP1-Y EMBEDDED MESA STRIPE LASERSPRINCE FC; PATEL NB; BULL DJ et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1034-1038; BIBL. 23 REF.Article

LIQUID PHASE EPITAXIAL GROWTH OF GAXIN1-XPSTRINGFELLOW GB; LINDQUIST PF; BURMEISTER RA et al.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 437-457; BIBL. 2 P. 1/2Serial Issue

GAINASP/INP DH LASERS WITH A CHEMICALLY ETCHED FACETIGA K; POLLACK MA; MILLER BI et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1044-1047; BIBL. 17 REF.Article

OPTICAL RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTODIODESFORREST SR; KIM OK; SMITH RG et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 95-98; BIBL. 10 REF.Article

POSTGROWTH HEAT-TREATMENT EFFECTS IN HIGH-PURITY LIQUID-PHASE-EPITAXIAL IN0.53GA0.47ASRAO MV; BHATTACHARYA PK.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 196-197; BIBL. 7 REF.Article

THERMAL RESISTIVITY OF QUATERNARY SOLID SOLUTION GAXIN1-XASYP1-Y LATTICE-MATCHED TO INP AND GAASBOTH W; HERRMANN FP.1982; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 11; PP. K117-K122; BIBL. 14 REF.Article

RECOMBINATION ENHANCED DISLOCATION GLIDE IN INP SINGLE CRYSTALSMAEDA K; TAKEUCHI S.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 8; PP. 664-666; BIBL. 16 REF.Article

DIELECTRIC CONSTANT OF SEMI-INSULATING INDIUM PHOSPHIDENEIDERT RE; BINARI SC; WENG T et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 987-988; BIBL. 3 REF.Article

INDEX OF REFRACTION DISPERSION OF N- AND P-TYPE INP BETWEEN 0.95 AND 2.0 EVSTONE J; WHALEN MS.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 12; PP. 1140-1142; BIBL. 10 REF.Article

PHASE EQUILIBRIA AND VAPOR PRESSURES OF PURE PHOSPHORUS AND OF THE INDIUM/PHOSPHORUS SYSTEMS AND THEIR IMPLICATIONS REGARDING CRYSTAL GROWTH OF INP.BACHMANN KJ; BUEHLER E.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 6; PP. 835-846; BIBL. 41 REF.Article

THE EVAPORATION OF INP UNDER KNUDSEN (EQUILIBRIUM) AND LANGMUIR (FREE) EVAPORATION CONDITIONSFARROW RFC.1974; J. PHYS. D; G.B.; DA. 1974; VOL. 7; NO NO 17; PP. 2436-2448; BIBL. 13 REF.Article

ETUDE DU TRANSPORT DE INP PAR L'IODE A 880-950OCKLINKOVA LA; MEDVEDEVA ZS.1973; ZH. NEORG. KHIM.; S.S.S.R.; DA. 1973; VOL. 18; NO 1; PP. 38-43; BIBL. 8 REF.Serial Issue

A STUDY OF THE MOLAR FRACTION EFFECT IN THE PCL3-IN-H2 SYSTEM.CLARKE RC.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 23; NO 2; PP. 166-168; BIBL. 11 REF.Article

VAPOUR PHASE PREPARATION OF INDIUM PHOSPHIDE IN LARGE QUANTITIESBORN PJ; ROBERTSON DS.1976; J. MATER. SCI.; G.B.; DA. 1976; VOL. 11; NO 3; PP. 395-398; BIBL. 4 REF.Article

GROWTH OF INDIUM PHOSPHIDE FILMS FROM IN AND P2 BEAMS IN ULTRAHIGH VACUUM.FARROW RFC.1974; J. PHYS., D; G.B.; DA. 1974; VOL. 7; NO 11; PP. L121-L124; BIBL. 2 REF.Article

DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650OCCHAND N; HOUSTON PA.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 1; PP. 37-52; BIBL. 17 REF.Article

ETUDE DE LA NATURE DES CENTRES ACCEPTEURS A NIVEAUX PEU PROFONDS DANS LES MONOCRISTAUX DE PHOSPHURE D'INDIUM DOPESKOLESNIK LI; LOSHINSKIJ AM; NASHEL'SKIJ A YA et al.1981; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 12; PP. 2117-2121; BIBL. 7 REF.Article

STUDY OF DEEP LEVEL IN BULK P-INP BY ADMITTANCE SPECTROSCOPYKUO JM; THIEL FA.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 41-43; BIBL. 13 REF.Article

LASING CHARACTERISTICS OF GAINASP/INP NARROW PLANAR STRIPE LASERSOE K; ANDO S; SUGIYAMA K et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 7; PP. 3541-3544; BIBL. 11 REF.Article

PHOTOLUMINESCENCE STUDY OF MELT GROWN INPTEMKIN H; BONNER WA.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 1; PP. 397-401; BIBL. 23 REF.Article

ETUDE DES PROPRIETES PROTECTRICES DES FONDANTS DANS LA FABRICATION DE INPMARBAKH AL; CHERNOKOV IV.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1738-1741; BIBL. 10 REF.Article

OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION-RF PERFORMANCESFRISCOURT MR; ROLLAND PA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 135-137; BIBL. 8 REF.Article

RELIABILITY OF HIGH RADIANCE INGAASP/INP LED'S OPERATING IN THE 1.2-1.3 MU M WAVELENGTHYAMAKOSHI S; ABE M; WADA O et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 167-173; BIBL. 25 REF.Article

AN ENERGY SCHEME FOR INTERPRETING DEEP-LEVEL PHOTOCONDUCTIVITY AND OTHER RECENT OPTICAL MEASUREMENT FOR FE-DOPED INPEAVES L; SMITH AW; WILLIAMS PJ et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 33; PP. 5063-5068; BIBL. 14 REF.Article

HIGH EFFICIENCY 90 GHZ INP GUNN OSCILLATORSCROWLEY JD; SOWERS JJ; JANIS BA et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 18; PP. 705-706; BIBL. 2 REF.Article

  • Page / 460