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LIQUID PHASE EPITAXIAL GROWTH OF GA_XIN_1-XPSTRINGFELLOW GB; LINDQUIST PF; BURMEISTER RA et al.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 437-457; BIBL. 2 P. 1/2Serial Issue

GAINASP/INP DH LASERS WITH A CHEMICALLY ETCHED FACETIGA K; POLLACK MA; MILLER BI et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1044-1047; BIBL. 17 REF.Article

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ETUDE DU TRANSPORT DE INP PAR L'IODE A 880-950^OCKLINKOVA LA; MEDVEDEVA ZS.1973; ZH. NEORG. KHIM.; S.S.S.R.; DA. 1973; VOL. 18; NO 1; PP. 38-43; BIBL. 8 REF.Serial Issue

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ETUDE DES PROPRIETES PROTECTRICES DES FONDANTS DANS LA FABRICATION DE INPMARBAKH AL; CHERNOKOV IV.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 10; PP. 1738-1741; BIBL. 10 REF.Article

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AN ENERGY SCHEME FOR INTERPRETING DEEP-LEVEL PHOTOCONDUCTIVITY AND OTHER RECENT OPTICAL MEASUREMENT FOR FE-DOPED INPEAVES L; SMITH AW; WILLIAMS PJ et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 33; PP. 5063-5068; BIBL. 14 REF.Article

HIGH EFFICIENCY 90 GHZ INP GUNN OSCILLATORSCROWLEY JD; SOWERS JJ; JANIS BA et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 18; PP. 705-706; BIBL. 2 REF.Article

LEC GROWTH OF LARGE INP SINGLE CRYSTALS.ANTYPAS GA.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 33; NO 1; PP. 174-176; BIBL. 8 REF.Article

SURFACE MORPHOLOGY OF LIQUID-PHASE-EPITAXIAL INP.GUHA S; MAJERFELD A; MOYES N et al.1975; ELECTRON LETTERS; G.B.; DA. 1975; VOL. 11; NO 14; PP. 303-304; BIBL. 8 REF.Article

FORMATION DES DEFAUTS DANS LES CRISTAUX DE PHOSPHURE ET ARSENIURE D'INDIUM IRRADIES PAR DES NEUTRONS RAPIDESKEKELIDZE NP.1975; SOOBSHCH. AKAD. NAUK GRUZ S.S.R.; S.S.S.R.; DA. 1975; VOL. 80; NO 1; PP. 81-84; ABS. GEORGIEN ANGL.; BIBL. 9 REF.Article

DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY IN N-TYPE INPLIM H; SAGNES G; BASTIDE G et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 4; PP. 3317-3320; BIBL. 6 REF.Article

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