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EXPERIMENTAL AND THEORETICAL STUDY OF THE SPATIAL VARIATION OF JUNCTION VOLTAGE AND CURRENT DISTRIBUTION IN NARROW STRIPE INJECTION LASERS.SOMMERS HS JR; NORTH DO.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 11; PP. 4460-4467; BIBL. 13 REF.Article

SINGLE-TRANSVERSE-MODE INJECTION LASERS WITH EMBEDDED STRIPE LAYER GROWN BY MOLECULAR BEAM EPITAXY.LEE TP; CHO AY.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 164-166; BIBL. 17 REF.Article

FM SIDEBAND INJECTION LOCKING OF DIODE LASERSGOLDBERG L; TAYLOR HF; WELLER JF et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 23; PP. 1019-1020; BIBL. 6 REF.Article

SELF-MODULATION OF LIGHT OUTPUT FROM SEMICONDUCTOR INJECTION LASERS WITH COMPOUND CAVITIESOGASAWARA N; ITO R; SASAKI T et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1465-1471; BIBL. 16 REF.Article

LEAKY-MODE CHANNEL-GUIDE INJECTION LASERSACKLEY DE.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 766-768; BIBL. 10 REF.Article

EXTERNAL OPTICAL FEEDBACK EFFECTS ON SEMICONDUCTOR INJECTION LASER PROPERTIESLANG R; KOBAYASHI K.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 3; PP. 347-355; BIBL. 19 REF.Article

DER HALBLEITERINJEKTIONSLASER UND SEINE ANWENDUNG. I: GRUNDLAGEN = LE LASER A INJECTION A SEMI-CONDUCTEUR ET SON UTILISATION. I. PRINCIPESFRAHM J; JUNGE K.1979; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1979; VOL. 28; NO 2; PP. 71-75Article

STAND DER FORSCHUNG BEI HALBLEITER-INJEKTIONSLASERN = ETAT DE LA RECHERCHE DANS LE CAS DES LASERS A INJECTION A SEMICONDUCTEURGROTHE H.1978; NACHR. ELEKTRON.; DEU; DA. 1978; VOL. 32; NO 10; PP. 329-332; ABS. ENG; BIBL. 46 REF.Article

A NEW DIELECTRIC FACET REFLECTOR FOR SEMICONDUCTOR LASERS.ETTENBERG M.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 724-725; BIBL. 9 REF.Article

MEASUREMENT OF THE THERMAL IMPEDANCE OF INJECTION LASERS.FREUDE W.1977; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 11; PP. 478-480; ABS. ALLEM.; BIBL. 4 REF.Article

AUTOMATIC BIAS CONTROL (ABC) FOR INJECTION LASERS.ALBANESE A.1977; IN: OPT. FIBER TRANSM. II. TOP. MEET.; WILLIAMSBURG, VA.; 1977; S.L.; OPT. SOC. AM.; DA. 1977; PP. (4P.); BIBL. 3 REF.Conference Paper

LASER A SEMICONDUCTEUR COMME SOURCE DE RAYONNEMENT POUR LES DISPOSITIFS ET EXPERIENCES HOLOGRAPHIQUESBYKOVSKIJ YU A; ELKHOV VA; LARKIN AI et al.1975; IN: VSES. SHK. GOLOGRAFII. 7. MATER.; LENINGRAD; 1975; LENINGRAD; INST. YAD. FIZ.; DA. 1975; PP. 260-270Conference Paper

PHASE SENSITIVITY AND LINEWIDTH NARROWING IN A FOX-SMITH CONFIGURED SEMICONDUCTOR LASERPETUCHOWSKI SJ; MILSS RO; DANDRIDGE A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 4; PP. 302-304; BIBL. 13 REF.Article

SYNCHRONISATION MUTUELLE DES LASERS A SEMICONDUCTEUR A INJECTION EN REGIME MULTIMODEBRATCHIKOV AN; GRINEV A YU.1982; IZVESTIJA VYSSIH UCEBNYH ZAVEDENIJ. RADIOELEKTRONIKA; ISSN 0021-3470; SUN; DA. 1982; VOL. 25; NO 8; PP. 43-51; BIBL. 8 REF.Article

MODES IN ACTIVE WAVEGUIDES WITH INHOMOGENEOUS GAIN PROFILES AS APPLIED TO INJECTION LASERSPETERMANN K.1978; ARCH. ELEKTRON. UBERTRAG.-TECH.; DEU; DA. 1978; VOL. 32; NO 8; PP. 313-320; ABS. GER; BIBL. 19 REF.Article

REDUCTION OF RESONANCELIKE PEAK IN DIRECT MODULATION DUE TO CARRIER DIFFUSION IN INJECTION LASER.FURUYA K; SUEMATSU Y; TCHANGHEE HONG et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 12; PP. 1949-1952; BIBL. 15 REF.Article

GENERATEUR A THYRISTORS POUR LE POMPAGE DES LASERS A INJECTION DANS L'INTERVALLE DES TEMPERATURES DE FONCTIONNEMENTGALUN BV.1978; OPT.-MEKH. PROMYSHL.; S.S.S.R.; DA. 1978; VOL. 45; NO 1; PP. 44-47; BIBL. 9 REF.Article

CHOIX DU REGIME DE POMPAGE D'UN LASER A INJECTION DANS LES LIAISONS OPTIQUESAL'FEROV ZH I; PORTNOJ EL; PRINTSEV EV et al.1976; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1976; VOL. 46; NO 11; PP. 2398-2402; BIBL. 6 REF.Article

ANALYSIS OF DIODE LASER PROPERTIESSTREIFER W; SCIFRES DR; BURNHAM RD et al.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 11; PP. 1918-1929; BIBL. 19 REF.Article

ABOVE-THRESHOLD ANALYSIS OF CHANNELLED-SUBSTRATE-PLANAR (CSP) LASERSHORE KA.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 1; PP. 9-15; BIBL. 13 REF.Article

PLANAR STRIPE WITH WAIST AND/OR NOTCH (SWAN) INJECTION LASERKAWAGUCHI H; IKEGAMI T.1980; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1980; VOL. 16; NO 1; PP. 78-84; BIBL. 15 REF.Article

SPECIAL ISSUE ON SEMICONDUCTOR INJECTION LASERS1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 6; 79 P.; BIBL. DISSEM.Serial Issue

HIGH-POWER MULTIPLE-STRIPE INJECTION LASERS WITH CHANNEL GUIDESACKLEY DE.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 11; PP. 1910-1917; BIBL. 13 REF.Article

INTERACTION OF A BISTABLE INJECTION LASER WITH AN EXTERNAL OPTICAL CAVITYLAU KY; HARDER C; YARIV A et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 369-371; BIBL. 19 REF.Article

FIRST DERIVATIVES OF THE I-V CHARACTERISTICS OF BURIED STRIPE GEOMETRY DH INJECTION LASERSDMOCHOWSKI JE; DOBACZEWSKI LJ.1980; ARCH. ELEKTRON-UEBERTRAG.-TECH.; DEU; DA. 1980; VOL. 34; NO 4; PP. 181-182; ABS. GER; BIBL. 9 REF.Article

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