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THEORIE SANS MODELE DES PHENOMENES D'INJECTION DE CONTACT ET CERTAINES APPLICATIONS DE CELLE-CIZYUGANOV AN; SVECHNIKOV SV.1981; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1981; VOL. 10; NO 2; PP. 99-117; BIBL. 37 REF.Article

ETUDE DE LA POSSIBILITE D'INJECTION EXTERNE DANS UN MICROTRONESINA ZN; KUZNETSOV VM; LASHUK NA et al.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 24-26; BIBL. 6 REF.Article

DOUBLE INJECTION IN INSULATORS: THEORETICAL DESCRIPTION AND ANALYSIS OF SOME DOUBLE-INJECTION EXPERIMENTS IN ANTHRACENE CRYSTALS.SCHWOB HP; WILLIAMS DF.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2638-2649; BIBL. 16 REF.Article

EFFECT OF MOBILITY GRADATION ON EXCESS CARRIER DISTRIBUTION & CUT-OFF FREQUENCY OF A DIFFUSED BASE TRANSITOR AT DIFFERENT INJECTION LEVELS.SINHA T; CHOUDHURY NKD; BISWAS AK et al.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 10; PP. 680-684; BIBL. 7 REF.Article

SCALING LAW FOR HOT-CARRIER INJECTION IN INSULATORS.SHARMA YK; SRIVASTAVA BB.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 11; PP. 1214-1215; BIBL. 2 REF.Article

PROCESSUS D'INJECTION ET DE CHAMPS DANS LES COUCHES MINCES SEMICONDUCTRICES DANS LA REGION DU SAUT DE COURANTZYUGANOV AN; PIS'MENNYJ YU G; SVECHNIKOV SV et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 84-96; BIBL. 13 REF.Serial Issue

RECUIT PAR INJECTION DE DIODES DIFFUSEES A BASE DE GE APRES IRRADIATION PAR NEUTRONS RAPIDESAFANAS'EV VN; TUTUROV YU F; FILIMONCHEVA PI et al.1974; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1974; VOL. 10; NO 11; PP. 1926-1931; BIBL. 14 REF.Article

NOISE IN SINGLE INJECTION DIODES. I. A SURVEY OF METHODS.VAN VLIET KM; FRIEDMANN A; ZIJLSTRA RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1804-1813; BIBL. 42 REF.Article

ON THE DOUBLE INJECTION NEGATIVE-RESISTANCE IN MAGNETIC FIELD.DOLOCAN V.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 3; PP. 227-234; BIBL. 13 REF.Article

HIGH INJECTION IN A TWO-DIMENSIONAL TRANSISTOR.MANCK O; HEIMEIER HH; ENGL WL et al.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 403-409; BIBL. 23 REF.Article

ONE-CARRIER INJECTION IN AMORPHOUS SEMICONDUCTORS.LABIB AM; CHKHARTISHVILY YV.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 23; NO 1; PP. 291-295; ABS. RUSSE; BIBL. 10 REF.Article

ONE-DIMENSIONAL ONSAGER THEORY FOR CARRIER INJECTION IN METAL-INSULATOR SYSTEMS.BLOSSEY DF.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 9; NO 12; PP. 5183-5187; BIBL. 20 REF.Article

STORED CHARGE ESTIMATION BY ELECTRON-BEAM IRRADIATION.KOBAYASHI M.1974; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1974; VOL. 22; NO 7-8; PP. 695-703; BIBL. 7 REF.Article

DOUBLE INJECTION DANS UN SEMICONDUCTEUR COMPENSE PAR DES ACCEPTEURS PROFONDS DISPOSES DANS LA MOITIE INFERIEURE DE LA BANDE INTERDITEARUTYUNYAN VM.1974; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1974; VOL. 9; NO 4; PP. 316-321; ABS. ARM. ANGL.; BIBL. 8 REF.Article

INJECTED-CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN SEMICONDUCTOR LASERSOLSSON A; TANG CL.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 1; PP. 24-26; BIBL. 10 REF.Article

INJECTION EN VOLUME D'ELECTRONS DE GRANDE ENERGIE DANS LES DIELECTRIQUESEVDOKIMOV OB.1976; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1976; VOL. 19; NO 3; PP. 7-12; BIBL. 2 REF.Article

NOISE IN SINGLE INJECTION DIODES. II. APPLICATIONS.VAN VLIET KM; FRIEDMANN A; ZIJLSTRA RJ et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1814-1823; BIBL. 17 REF.Article

PHOTOINJECTION OF ELECTRONS AND HOLES INTO P-TERPHENYL FROM METALLIC CONTACTS.KOTANI M; OHNO S.1975; CHEM. LETTERS; JAP.; DA. 1975; NO 2; PP. 99-102; BIBL. 7 REF.Article

CARACTERISTIQUES STATIQUES DU TRANSISTOR A ALIMENTATION INJECTEEAVAEV NA; NAUMOV YU E.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 5; PP. 42-48; BIBL. 7 REF.Article

THEORIE APPROCHEE DE L'INJECTION DOUBLE POUR UN SEMICONDUCTEUR A TOPOLOGIE ARBITRAIRE DE LA BANDE INTERDITEZYUGANOV AN; SYPKO NI.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 21; PP. 19-34; BIBL. 19 REF.Article

EFFET DE L'INJECTION SUR UN DOMAINE STATIQUELUKASH VS; SHUSHKEVICH VL; LYUZE LL et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 3; PP. 548-551; BIBL. 5 REF.Serial Issue

DOUBLE INJECTION FOR WEAK HEATING OF CURRENT CARRIERS.AKOPYAN A; GRIBNIKOV ZS.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 1; PP. 41-46; BIBL. 9 REF.Article

EFFICIENT LOW-VOLTAGE ELECTROLUMINESCENT DEVICES BY TUNNEL INJECTION OF HOLES.CLARK MD; BAIDYAROY S; RYAN F et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 36-38; BIBL. 11 REF.Article

A PHENOMENOLOGICAL THEORY OF DOUBLE INJECTION WITH TRAPPING.BONHAM JS.1975; AUSTRAL. J. CHEM.; AUSTRAL.; DA. 1975; VOL. 28; NO 8; PP. 1631-1641Article

AVALANCHE INJECTION INTO THE OXIDE IN SILICON GATE-CONTROLLED DEVICES. II. EXPERIMENTAL RESULTS.BULUCEA C.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 381-391; H.T. 1; BIBL. 31 REF.Article

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