INTRINSIC RESPONSE TIME OF NORMALY OFF MESFET'S OF GAAS, SI, AND INPINO M; OHMORI M.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 5; PP. 456-459; BIBL. 8 REF.Article

OCCURRENCE OF METHYLGUANIDINE AND AGMATINE, NITROSATABLE GUANIDINO COMPOUNDS, IN FOODS.KAWABATA T; OHSHIMA H; INO M et al.1978; J. AGRIC. FOOD CHEM.; USA; DA. 1978; VOL. 26; NO 2; PP. 334-338; BIBL. 16 REF.Article

SUB-FJ INVERTER ANALYSIS FOR GAAS VLSITOGASHI M; INO M; HIRAYAMA M et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 6; PP. 231-232; BIBL. 1 REF.Article

SYNTHESIS OF N-ACETYLBENZIMIDAZOLE DERIVATIVESTANAKA K; SHIMAZAKI INO M; MURAKAMI Y et al.1982; CHEM. PHARM. BULL.; ISSN 0009-2363; JPN; DA. 1982; VOL. 30; NO 8; PP. 2715-2722; BIBL. 15 REF.Article

THRESHOLD VOLTAGE MARGIN OF NORMALLY-OFF GAAS MESFET IN DCFL CIRCUITINO M; KURUMADA K; OHMORI M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 6; PP. 144-146; BIBL. 4 REF.Article

GH₂ BAND SI DDR DIODES.INO M; MAKIMURA T; YAMAZAKI H et al.1977; REV. ELECTR. COMMUNIC. LAB.; JAP.; DA. 1977; VOL. 25; NO 7-8; PP. 797-804; BIBL. 20 REF.Article

SUBMILLIMETER WAVE, SIP⁺-P-N⁺ IMPATT DIODES.INO M; ISHIBASHI T; OHMORI M et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 89-92; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

CYCLIZATION OF ((4- OR 5-SUBSTITUTED-2-BENZIMIDAZOLYL) THIO) ACETIC ACIDS. ISOLATION AND IDENTIFICATION OF TWO POSSIBLE ISOMERS OF SUBSTITUTED THIAZOLO (3,2-A) BENZIMIDAZOL-3(2H)-ONETANAKA K; INO M; MURAKAMI Y et al.1981; CHEM. PHARM. BULL.; ISSN 0009-2363; JPN; DA. 1981; VOL. 29; NO 7; PP. 1876-1886; BIBL. 16 REF.Article

ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D TYPE GAAS DCFL CIRCUITSINO M; HIRAYAMA M; OHMORI M et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 15; PP. 522-523; BIBL. 2 REF.Article

ION IMPLANTATION AND HCL TREATMENT SIMPLIFY SOS/CMOS PROCESSING AND SLASH LEAKAGE CURRENT.MIZOKAMI H; INO M; HASHIMOTO T et al.1975; J. ELECTRON. ENGNG; JAP.; DA. 1975; NO 103; PP. 26-30Article

LE SYSTEME D'OBSERVATION DE L'EAU SOUTERRAINE POUR LA PREVISION DES SEISMES DANS LA PARTIE ORIENTALE DU DISTRICT DE TOKAIKATOH K; IKEDA K; TSUKUDA E et al.1980; J. JAPANESE ASSOC. GROUNDWATER HYDROL.; ISSN 0029-0602; JPN; DA. 1980; VOL. 22; NO 1; PP. 1-21; ABS. ENG; BIBL. 1 P.; 5 TAB. ; ESQUISSE/ILL./TABL.Article

GHZ SILICON DIAMOND-HEATSINK IMPATT DIODESINO M; MAKIMURA T; ISHIBASHI T et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 2-3; BIBL. 5 REF.Article

GAAS 256-BIT STATIC RAMOHWADA K; INO M; MIZUTANI T et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 7; PP. 299-300; BIBL. 6 REF.Article

SYSTEME D'OBSERVATION DE L'EAU SOUTERRAINE POUR LA PREVISION SISMIQUE DANS LA PARTIE EST DU DISTRICT DE TOKAI. ESQUISSE DES PUITS ET DES INSTRUMENTS D'OBSERVATIONKATOH K; IKEDA K; TONO M et al.1981; CHISHITSU CHOSAJO GEPPO; ISSN 0016-7665; JPN; DA. 1981; VOL. 32; NO 1; PP. 45-55; ABS. ENG; BIBL. 13 REF.; 4 TAB. ; ESQUISSE/ILL./TABL.Article

LIQUID-NITROGEN-COOLED SUBMILLIMETRE-WAVE SILICON IMPATT DIODES.ISHIBASHI T; INO M; MAKIMURA T et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 10; PP. 299-300; BIBL. 3 REF.Article

DIRECT-COUPLED LOGIC OPERATION OF GAAS COLUMN GATE FETISHII Y; ASAI K; INO M et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 5; PP. 118-120; BIBL. 4 REF.Article

ETUDE DE LA PREVISION DES SEISMES DANS LA PARTIE ORIENTALE DU DISTRICT DE TOKAI. OBSERVATIONS AUTOMATIQUES DE LA CONCENTRATION DU RADON DANS LES EAUX SOUTERRAINESIKEDA K; MURASHITA T; TAGUTSCHI Y et al.1981; CHISHITSU CHOSAJO GEPPO; ISSN 0016-7665; JPN; DA. 1981; VOL. 32; NO 3; PP. 151-166; H.T. 1; ABS. ENG; BIBL. 1 P.; 3 TAB. ; ESQUISSE/TABL./ILL.Article

POWER CONSIDERATIONS IN IMPATT-DIODE ARRAYS WITH INCOMPLETE THERMAL ISOLATIONSUZUKI H; KURITA O; INO M et al.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 6; PP. 632-638; BIBL. 17 REF.Article

ESTIMATION OF GAAS STATIC RAM PERFORMANCEINO M; HIRAYAMA M; KURUMADA K et al.1982; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 7; PP. 1130-1135; BIBL. 13 REF.Article

En Japonais = Coal structure : approach from solvent extraction of coalsTAKANOHASHI, T; INO, M.Nenryo Kyokai-Shi. 1991, Vol 70, Num 8, pp 802-810, issn 0369-3775Article

Generalised elmore delay expression for distributed RC tree networksYAMAKOSHI, K; INO, M.Electronics Letters. 1993, Vol 29, Num 7, pp 617-618, issn 0013-5194Article

DESIGN AND PERFORMANCE OF GAAS DCFL FREQUENCY DIVIDERKAWASAKI R; INO M; HIRAYAMA M et al.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 7; PP. 1100-1101; BIBL. 10 REF.Article

RELIABILITY LIFE TESTS ON AN ENCAPSULATED MILLIMETER-WAVE DDR IMPATT DIODEOHMORI M; INO M; FUJIMOTO M et al.1980; TRANS. INT. ELECTRON. COMMUN. ENG. JPN., E; JPN; DA. 1980; VOL. 63; NO 6; PP. 409-413; BIBL. 6 REF.Article

Alteration of cellular compartmentation and membrane permeability to sugars in immature and mature apple fruitYAMAKI, S; INO, M.Journal of the American Society for Horticultural Science. 1992, Vol 117, Num 6, pp 951-954, issn 0003-1062Article

Comportement électrolytique de fontes de verres contenant plusieurs oxydes formateursMIURA, Y; INO, M; TAKAHASHI, K et al.Yogyo kyokaishi. 1986, Vol 94, Num 5, pp 491-497, issn 0009-0255Article