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A HIGH-DENSITY BIPOLAR LOGIC MASTERSLICE FOR SMALL SYSTEMSCHEN JZ; CHIN WB; JEN TS et al.1981; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1981; VOL. 25; NO 2-3; PP. 142-151; BIBL. 15 REF.Article

THE SCHOTTKY I2L TECHNOLOGY AND ITS APPLICATION IN A 24 X 9 SEQUENTIAL ACCESS MEMORY.HEWLETT FW JR; RYDEN WD.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 119-123; BIBL. 8 REF.Article

SCHOTTKY I2L (SUBSTRATE FED LOGIC) - AN OPTIMUM FORM OF I2L.WALSH PJ; SUMERLING GW.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 123-127; BIBL. 3 REF.Article

A NEW HIGH SPEED I2L STRUCTURE.ROESNER BB; MCGREIVY DJ.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 114-118; BIBL. 7 REF.Article

INTEGRATED INJECTION LOGIC: A REVIEW OF ITS STATUS AND PROSPECTSHALBO L.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 2; PP. 5-11; BIBL. 79 REF.Article

SCHWANKUNGSERSCHEINUNGEN ALS PRINZIPIELLE UND PRAKTISCHE LEISTUNGSGRENZEN OPTISCHER NACHRICHTENSYSTEME = LES PHENOMENES DE FLUCTUATIONS EN TANT QUE FACTEURS LIMITANT, EN PRINCIPE ET EN PRATIQUE, LA PUISSANCE DE SYSTEMES DE TELECOMMUNICATIONS OPTIQUESGRAU G.1983; AEUE. ARCHIV FUER ELEKTRONIK UND UEBERTRAGUNGSTECHNIK; ISSN 0001-1096; DEU; DA. 1983; VOL. 37; NO 5-6; PP. 137-145; ABS. ENG; BIBL. 16 REF.Article

CHARACTERISATION OF I2L GATESWULMS HEJ.1978; MICROELECTRONICS; GBR; DA. 1978; VOL. 9; NO 2; PP. 4-7Article

LA COMPETITIVITA' DELLA I2L. = LA COMPETITION DANS LA LOGIQUE INTEGREE A INJECTIONDANCE JB.1978; ANTENNA; ITAL.; DA. 1978; VOL. 50; NO 1; PP. 15-20Article

REPLY TO COMMENT ON THE PAPER ENTITLED "A NOTE ON BETA UP AND BETA DOWN I2L TRANSISTORS"BERGER HH.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1213; BIBL. 3 REF.Article

VERTICAL INJECTION LOGIC. AN IMPROVED STRUCTURE OF INTEGRATED INJECTION LOGIC.NAKANO T; HORIBA Y; KIJIMA K et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 129-134; BIBL. 14 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

LOGIQUE I2L.CHATELAIN JD.1976; ELECTRONIQUE; SUISSE; DA. 1976; VOL. 5; NO 10-11; PP. EL6-EL9; BIBL. 8 REF.Article

POLY I2L WITH DEPOSITED POLYSILICON COLLECTORELSAID MH; RASHED AM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 281-286; BIBL. 13 REF.Article

MODELING INTEGRATED INJECTION LOGIC.ESTREICH DB; DUTTON RW.1977; IN: ANNU. ASILOMAR CONF. CIRCUITS, SYST., COMPUT. 10; PACIFIC GROVE, CALIF.; 1976; NORTH HOLLYWOOD, CALIF.; WESTERN PERIODICALS; DA. 1977; PP. 117-121; BIBL. 5 REF.Conference Paper

INTEGRATED INJECTION LOGIC (I2L).KLINDER J.1976; IN: INT. ELECTRON. PACKAG. PROD. CONF. PROC. TECH. PROGRAMME; BRIGHTON, ENGL.; 1976; SURBITON; KIVER COMMUNICATIONS; DA. 1976; PP. 114-121Conference Paper

I3L: EINE WEITERENTWICKLUNG DER I2L-TECHNIK = I3L, EXTENSION DE LA TECHNIQUE I2LWEISS M.1979; ELEKTRONIK; DEU; DA. 1979; VOL. 28; NO 13; PP. 43-44; BIBL. 10 REF.Article

I2L TIMING CIRCUIT FOR THE 1MS-10 S RANGE.MULLER R.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 139-143; BIBL. 4 REF.Article

PARTICULARITES DU CONTROLE D'UN ELEMENT DE STOCKAGE, A INJECTION, SUPERINTEGREAMIRKHANOV AV; GLADKOV VN; DYAGILEV VN et al.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 3; PP. 238-241; BIBL. 6 REF.Article

INTEGRATED SCHOTTKY LOGIC GATE ARRAYLAU SY.1980; MICROELECTRONICS J.; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 5; PP. 5-11Article

CELLULE ELEMENTAIRE D'UN MULTIPLICATEUR PARALLELE A GRAND NOMBRE DE CHIFFRES DU TYPE I2LVARICHENKO LV; LAPSHINOV ON.1980; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1980; VOL. 9; NO 5; PP. 423-432; BIBL. 6 REF.Article

KONSTRUKCJA I PARAMETRY UKLADOW TYPU I2L = CONSTRUCTION ET PARAMETRES DES CIRCUITS DU TYPE LOGIQUE (INJECTION INTEGREE)WILAMOWSKI B.1980; ROZPR. ELEKTROTECH.; POL; DA. 1980; VOL. 26; NO 1; PP. 17-27; ABS. ENG/FRE/GER/RUS; BIBL. 23 REF.Article

PROPERTIES OF INTEGRATED INJECTION LOGIC FABRICATED UNDER DIFFERENT PROCESS CONDITIONSHARALDSEN J; HALBO L.1982; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1982; VOL. 129; NO 1; PP. 15-20; BIBL. 20 REF.Article

STATISCHE UND DYNAMISCHE DIMENSIONIERUNG VON I2L-SCHALTUNGEN = LE DIMENSIONNEMENT STATIQUE ET DYNAMIQUE DU CIRCUIT I2LTEICHMANN J.1979; NACHR.-TECH. ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 4; PP. 144-147; BIBL. 2 REF.Article

LES CIRCUITS INTEGRES FACE AUX PROBLEMES DE L'AUTOMOBILE: LA SOLUTION "12 L"BENOIT H; LEZMI G.1978; INGRS DE L'AUTOM.; FRA; DA. 1978; NO 10; PP. 536-539Article

LES MEMOIRES DYNAMIQUES BIPOLAIRES VONT-ELLES CONCURRENCER LES MOS.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 227; PP. 49Article

SUBNANOSECOND SELF-ALIGNED I2L/MTL CIRCUITSTANG DD; NING TH; ISAAC RD et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1379-1384; BIBL. 22 REF.Article

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