EXACT SOLUTION OF AN INTRINSIC INTERFACE PROFILEABRAHAM DB.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 7; PP. 4922-4924; BIBL. 16 REF.Article

THE DETERMINATION OF SURFACE STATE ENERGIES AT A SEMICONDUCTOR/ELECTROLYTE INTERFACE BY LAPLACE DOMAIN IMPEDANCE ANALYSISROSENTHAL J; WESTERBY B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2147-2148; BIBL. 10 REF.Article

SUR LA STRUCTURE DES SPECTRES DE PHOTOSENSIBILITE DES SYSTEMES COMPOSES DE COUCHES D'HALOGENURES DE CUIVRE SUR DE L'ARGENT OU DU CUIVREKOSTYSHIN MT; KRASNOZHENOV EP.1972; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1972; VOL. 17; NO 9; PP. 1455-1460; ABS. ANGLSerial Issue

THE THEORY OF THE INSTABILITY OF A PLANAR INTERFACE IN A PROCESS OF THE PHASE TRANSFORMATIONBYCHKOV YA; IORDANSKY SV.1982; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1982; VOL. 43; NO 4; PP. 377-379; BIBL. 3 REF.Article

STATISTICAL MECHANISMS OF CHAIN MOLECULES AT AN INTERFACE.BELLEMANS A.1977; J. COLLOID INTERFACE SCI.; U.S.A.; DA. 1977; VOL. 58; NO 3; PP. 521-527; BIBL. 21 REF.; (INT. CONF. COLLOIDS SURF.; PUERTO RICO; 1976)Conference Paper

PASSAGE DES ELECTRONS PAR EFFET TUNNEL AU TRAVERS D'UN CONTACT METAL-SEMICONDUCTEURSTEPANOV GV; KAUFMAN MS; STERNIN M YU et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 327-333; BIBL. 5 REF.Serial Issue

ETUDE DE L'EFFET TUNNEL DANS LES CONTACTS METAL-SEMICONDUCTEUR SOUS PRESSION HYDROSTATIQUEGUETIN P.1972; AO-CNRS-7638; FR.; DA. 1972; PP. (66 P.); H.T. 19; BIBL. 2 P.; (THESE DOCT. SCI., SPEC. PHYS. SOLIDE; UNIV. PARIS-SUD; 1972)Thesis

CORRELATIONS AT A FLUID SURFACE.SULLIVAN DE; STELL G.1977; J. CHEM. PHYS.; U.S.A.; DA. 1977; VOL. 67; NO 6; PP. 2567-2576; BIBL. 23 REF.Article

THE TRUE AREA OF CONTACT AT A LIQUID METAL-SOLID INTERFACETIMSIT RS.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 5; PP. 379-381; BIBL. 8 REF.Article

STUDY OF THE SI-SIO₂ INTERFACE STATE WITH THE NEGATIVE BIAS-HEAT TREATMENT APPROACHKOBAYASHI I; NAKAHARA M; ATSUMI M et al.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 2; PP. 249-250; BIBL. 4 REF.Serial Issue

STRUCTURE OF A SIMPLE FLUID NEAR A WALL. II: COMPARISON WITH MONTE CARLOSULLIVAN DE; LEVESQUE D; WEIS JJ et al.1980; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1980; VOL. 72; NO 2; PP. 1170-1174; BIBL. 15 REF.Article

ETUDE DE LA VITESSE DE GERMINATION DES CRISTAUX DE PARAFFINE EN SOLUTIONMEZHIDOV V KH; ASKHABOV KH I.1980; IZV. VYSS. UCEBN. ZAVED., HIM. HIMICESKAJA TECHNOL.; ISSN 0579-2991; SUN; DA. 1980; VOL. 23; NO 9; PP. 1177-1179; BIBL. 6 REF.Article

FIELD ION MICROSCOPY OF METAL-METAL CONTACTS.WALKO RJ.1978; SURF. SCI.; NETHERL.; DA. 1978; VOL. 70; PP. 302-324; BIBL. 29 REF.Article

SURFACE STATES AT SEMICONDUCTOR-LIQUID JUNCTIONKOBAYASHI K; AIKAWA Y; SUKIGARA M et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2526-2532; BIBL. 25 REF.Article

COMMENT ON "THE STRUCTURE OF A HARD SPHERE FLUID IN CONTACT WITH A SOFT REPULSIVE WALL".ABRAHAM FF; SINGH Y.1978; J. CHEM. PHYS.; USA; DA. 1978; VOL. 68; NO 10; PP. 4767-4768; BIBL. 2 REF.Article

GENERAL EQUATIONS FOR THE EQUILIBRIUM SHAPE OF A FLUID INTERFACE AND FOR ITS ANGLE OF CONTACT WITH A SOLIDFORTES MA.1980; PHYS. CHEM. LIQ.; ISSN 0031-9104; USA; DA. 1980; VOL. 9; NO 4; PP. 285-305Article

PROPRIETES INTERFACIALES D'AMINOACIDES EN SOLUTIONOGINO K; YAMAUCHI H; SHIBAYAMA T et al.1982; YUKAGAKU; ISSN 0513-398X; JPN; DA. 1982; VOL. 31; NO 12; PP. 1009-1013; ABS. ENG; BIBL. 12 REF.Article

STANDARDISING THE A.D.A.-TO-MICROPROCESSOR INTERFACE. TWO VIEWS FROM ONE VIEWPOINT.GORDON BM.1977; ELECTRON. AND POWER; G.B.; DA. 1977; VOL. 23; NO 5; PP. 393-396Article

DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEMNARUSAWA T; KOMIYA S; KIRAKI A et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 389-390; BIBL. 10 REF.Serial Issue

EFFET ACOUSTO-ELECTRIQUE DE SIGNE ALTERNATIF DANS UN INTERFACE PIEZODIELECTRIQUE-SEMICONDUCTEURKALASHNIKOV SG; MOROZOV AI; ZEMLYANITSYN MA et al.1972; ZH. EKSPER. TEOR. FIZ., PIS'MA REDAKC.; S.S.S.R.; DA. 1972; VOL. 16; NO 3; PP. 170-173; BIBL. 9 REF.Serial Issue

EFFET ACOUSTOELECTRIQUE DANS UNE STRUCTURE FEUILLETEE PIEZODIELECTRIQUE-SEMICONDUCTEURKMITA AM; MEDVED AV.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 9; PP. 2646-2655; BIBL. 7 REF.Serial Issue

ETUDE DES PROPRIETES ELECTRIQUES DE L'INTERFACE LIQUIDE-SEMICONDUCTEUR.CLERC D; VIKTOROVITCH P; KAMARINOS G et al.1975; VIDE; FR.; DA. 1975; VOL. 30; NO 176; PP. 50-52; ABS. ANGL.; BIBL. 5 REF.Article

ELECTROMIGRATION FAILURE AT ALUMINIUM-SILICON CONTACTSPROKOP GS; JOSEPH RR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2595-2602; BIBL. 29 REF.Serial Issue

NON-EQUILIBRIUM THERMODYNAMICS OF INTERFACIAL SYSTEMS.KOVAC J.1977; PHYSICA A; PAYS-BAS; DA. 1977; VOL. 86; PP. 1-24Article

LIQUID-SOLID INTERFACE INERTIAPUECH L; CASTAING B.1982; J. PHYS., LETT.; ISSN 0302-072X; FRA; DA. 1982; VOL. 43; NO 16; PP. L 601-L 608; ABS. FRE; BIBL. 13 REF.Article