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ELECTROMIGRATION FAILURE AT ALUMINIUM-SILICON CONTACTSPROKOP GS; JOSEPH RR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2595-2602; BIBL. 29 REF.Serial Issue

STATISTICAL MODEL FOR ELECTROMIGRATION FAILURE AT ALUMINIUM CONTACTS AND TERMINALSPROKOP GS; LIANG G.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 474-498; BIBL. 1 P.Serial Issue

OHMIC CONTACTS ON N+-AND P+-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

BEHAVIOR OF AL-SI SCHOTTKY BARRIER DIODES UNDER HEAT TREATMENTCHINO K.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 119-121; H.T. 1; BIBL. 4 REF.Serial Issue

CONTACT POTENTIALS AND BARRIER HEIGHTS IN GOLD-SILICON AND ALUMINUM-SILICON CONTACTSAHMAD K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4706-4713; BIBL. 31 REF.Serial Issue

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