ETATS SUPERFICIELS RAPIDES ACTIVES PAR DES IONS ACTIVES D'ARGENT A L'INTERFACE GERMANIUM-ELECTROLYTE NEUTRESHIROKOV AA; BOZHKOV VG; VYATKIN AP et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1975; VOL. 58; NO 8; PP. 91-96; BIBL. 15 REF.Article

MEASUREMENT OF ENERGY BAND GAP USING AN ELECTROLYTE-SEMICONDUCTOR JUNCTION: WATER-GALLIUM INDIUM ARSENIDE ALLOYS. = MESURE DE BANDES INTERDITES AU MOYEN D'UNE JONCTION SEMICONDUCTEUR-ELECTROLYTE ALLIAGES ARSENIURE D'INDIUM ET DE GALLIUM-EAUJAYANT BALIGA B; RAJARAM BHAT; GHANDHI SK et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 9; PP. 3941-3945; BIBL. 16 REF.Article

ETUDE DES ETATS DE SURFACE LENTS A L'INTERFACE SEMICONDUCTEUR-ELECTROLYTETYAGAJ VA; KOLBASOV G YA; BONDARENKO VN et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2325-2331; BIBL. 19 REF.Serial Issue

REFLEXION ELECTROOPTIQUE D'ELECTROLYTE-DIOXYDE DE SI-SI DANS DES CHAMPS ELECTRIQUES INTENSES AU VOISINAGE DE LA SURFACETYAGAJ VA; EVSTIGNEEV AM; SNITKO OV et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2341-2346; BIBL. 14 REF.Serial Issue

TUNNELLING PROCESSES AT HIGHLY DOPED ZNO-ELECTRODES IN AQUEOUS ELECTROLYTES. II. ELECTRON EXCHANGE WITH THE VALENCE BAND.PETTINGER B; SCHOEPPEL HR; YOKOYAMA T et al.1974; BER. BUNSENGESELLSCH. PHYS. CHEM.; DTSCH.; DA. 1974; VOL. 78; NO 10; PP. 1024-1030; ABS. ALLEM.; BIBL. 31 REF.Article

SEMICONDUCTOR-ELECTROLYTE INTERFACE DEVICES FOR SOLAR ENERGY CONVERSION.JAYADEVAIAH TS.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 7; PP. 399-400; BIBL. 5 REF.Article

IMPEDANCE METER FOR SEMICONDUCTOR SURFACE CAPACITY MEASUREMENT.SOOS JM; FUELOP M.1973; PERIOD. POLYTECH., CHEM. ENGNG; HONGR.; DA. 1973; VOL. 17; NO 2; PP. 135-138; BIBL. 2 REF.Article

THE ELECTROLYTE-SILICON INTERFACE; ANODIC DISSOLUTION AND CARRIER, CONCENTRATION PROFILINGSHARPE CD; LILLEY P.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 9; PP. 1918-1922; BIBL. 10 REF.Article

STRUCTURE AND ENERGY OF THE INTERFACE BETWEEN AN INSULATOR AND AN ELECTROLYTE.WILLIAMS R.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 3; PP. 542-550; BIBL. 14 REF.Article

THE DETERMINATION OF SURFACE STATE ENERGIES AT A SEMICONDUCTOR/ELECTROLYTE INTERFACE BY LAPLACE DOMAIN IMPEDANCE ANALYSISROSENTHAL J; WESTERBY B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2147-2148; BIBL. 10 REF.Article

ELECTRODE-LIMITED PHOTOINJECTION IN AQUEOUS ELECTRODE-ORGANIC CRYSTAL SYSTEMSGODLEWSKI J.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. 499-507; ABS. RUS; BIBL. 23 REF.Article

SCANNING LIGHT-SPOT ANALYSIS OF THE CARRIER COLLECTION IN LIQUID-JUNCTION SOLAR ENERGY CONVERTERSFURTAK TE; CANFIELD DC; PARKINSON BA et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 6018-6021; BIBL. 14 REF.Article

A THEORETICAL TREATMENT OF CHARGE TRANSFER VIA SURFACE STATES AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE: ANALYSIS OF THE WATER PHOTOELECTROLYSIS PROCESSNISHIDA M.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 3; PP. 1669-1675; BIBL. 37 REF.Article

SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTESWILLIAMS R.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2848-2851; BIBL. 13 REF.Article

P-N PHOTOELECTROLYSIS CELLS.NOZIK AJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 3; PP. 150-153; BIBL. 23 REF.Article

MEASUREMENT OF PHYSICAL PROPERTIES OF GALLIUM ARSENIDE AND SILICON BY ELECTROCHEMICAL METHODS.WOLKENBERG A.1975; SURF. SCI.; NETHERL.; DA. 1975; VOL. 50; NO 2; PP. 580-590; BIBL. 19 REF.Article

INTERFACES SEMI-CONDUCTEUR-ELECTROLYTE: CORRELATIONS ENTRE LE POTENTIEL DE BANDE PLATE ET LES ECHELLES D'ELECTRONEGATIVITEEL HALOUANI F; DESCHANVRES A.1982; MATER RES. BULL.; ISSN 0025-5408; USA; DA. 1982; VOL. 17; NO 8; PP. 1045-1052; ABS. ENG; BIBL. 22 REF.Article

INFLUENCE OF WATER ON THE CAPACITANCE/POTENTIAL DISTRIBUTION AT THE TIO₂/CH₃CN JUNCTIONHEINZEL AB; TESCHNER DM; SCHUMACHER R et al.1981; BER. BUNSENGES. PHYS. CHEM.; ISSN 0005-9021; DEU; DA. 1981; VOL. 85; NO 12; PP. 1117-1119; BIBL. 16 REF.Article

HOT CARRIER INJECTION AT SEMICONDUCTOR-ELECTROLYTE JUNCTIONSBOUDREAUX DS; WILLIAMS F; NOZIK AJ et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2158-2163; BIBL. 17 REF.Article

POTENTIAL DISTRIBUTION AT THE INTERFACE BETWEEN A P-TYPE SILICON ELECTRODE AND A 0.1 N HYDROFLUORIC ACID SOLUTION ELECTROLYTE UNDER POLARIZATION.KONOVA AA; ZHELEV KV; DUSHKOV AN et al.1976; BULG. J. PHYS.; BULG.; DA. 1976; VOL. 3; NO 1; PP. 63-68; ABS. RUSSE; BIBL. 3 REF.Article

PROPRIETES ELECTROPHYSIQUES DE STRUCTURES ELECTROLYTETYAGAJ VA; PETROVA NA; SHIRSHOV YU M et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 80-88; H.T. 2; BIBL. 14 REF.Serial Issue

A QUANTITATIVE STUDY OF FERMI LEVEL PINNING AT SEMICONDUCTOR-ELECTROLYTE INTERFACECHAZALVIEL JN; TRUONG TB.1980; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; ISSN 0022-0728; CHE; DA. 1980; VOL. 114; NO 2; PP. 299-303; BIBL. 15 REF.Article

ELECTROCHEMICAL TECHNIQUES FOR THE STUDY OF PHOTOSENSITIZATIONGERISCHER H.1972; PHOTOCHEM. AND PHOTOBIOL.; G.B.; DA. 1972; VOL. 16; NO 4; PP. 243-260; BIBL. 1 P.Serial Issue

OBSERVATION OF "INTRINSIC" SURFACE STATES AT THE TIO₂-AQUEOUS-ELECTROLYTE INTERFACE BY SUB-BAND-GAP ELECTROREFLECTANCE SPECTROSCOPYSIRIPALA W; TOMKIEWICZ M.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 6; PP. 443-446; BIBL. 16 REF.Article

SURFACE STATES AT SEMICONDUCTOR-LIQUID JUNCTIONKOBAYASHI K; AIKAWA Y; SUKIGARA M et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2526-2532; BIBL. 25 REF.Article