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INTERFACIAL ELECTRICAL PROPERTIES OF ION-BEAM SPUTTER DEPOSITED AMORPHOUS CARBON ON SILICONAZIM KHAN; WOOLLAM JA; CHUNG Y et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 146-149; BIBL. 16 REF.Article

ON THE ELECTRICAL PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL/INSULATOR/SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATESHASEGAWA H; SAWADA T.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 103; NO 1-2; PP. 119-140; BIBL. 79 REF.Article

SI-SIO2 INTERFACE STATES BASED ON OPTICALLY ACTIVATED CONDUCTANCE TECHNIQUESINGH RJ; SRIVASTAVA RS.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 4; PP. 319-323; BIBL. 17 REF.Article

STUDY OF METAL-SEMICONDUCTOR INTERFACE STATES USING SCHOTTKY CAPACITANCE SPECTROSCOPYBARRET C; CHEKIR F; VAPAILLE A et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 12; PP. 2421-2438; BIBL. 18 REF.Article

USE OF L1L2,3)V AUGER TRANSITIONS FOR AN ELECTRONIC-STRUCTURE STUDY OF THE AL-SI(111)-(2 X 1) INTERFACEKOBAYASHI KLI; SHIRAKI Y; GERKEN F et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3575-3578; BIBL. 12 REF.Article

THEORETICAL STUDY OF METAL OVERLAYER THICKNESS EFFECTS ON THE ELECTRONIC PROPERTIES OF METAL-SEMICONDUCTOR INTERFACESMASRI P; LANGLADE P.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 34; PP. 5379-5389; BIBL. 21 REF.Article

THE ELECTRONIC STRUCTURE OF SI/GAP (110) INTERFACE AND SUPERLATTICEMADHUKAR A; DELGADO J.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 37; NO 3; PP. 199-203; BIBL. 11 REF.Article

ELECTRONIC STRUCTURE OF ZINC-BLENDE-WURTZITE INTERFACES: ZNS-ZNS (111-0001) AND ZNSE-ZNSE (111-0001)NORTHRUP JE; IHM J; COHEN ML et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 4; PP. 2060-2065; BIBL. 12 REF.Article

MEASUREMENTS OF INTERFACE STATE DENSITY IN MNOS STRUCTURES.ARNOLD E; SCHAUER H.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 333-335; BIBL. 6 REF.Article

SELF-CONSISTENT CALCULATIONS OF INTERFACE STATES AND ELECTRONIC STRUCTURE OF THE (110) INTERFACES OF GE-GAAS AND ALAS-GAAS.PICKETT WE; LOUIE SG; COHEN ML et al.1978; PHYS. REV., B; U.S.A.; DA. 1978; VOL. 17; NO 2; PP. 815-828; BIBL. 33 REF.Article

THEORY OF GAAS-OXIDE INTERFACE STATESALLEN RE; DOW JD.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 4; PP. 379-381; BIBL. 12 REF.Article

THE DETERMINATION OF SURFACE STATE ENERGIES AT A SEMICONDUCTOR/ELECTROLYTE INTERFACE BY LAPLACE DOMAIN IMPEDANCE ANALYSISROSENTHAL J; WESTERBY B.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2147-2148; BIBL. 10 REF.Article

AN AC FIELD-EFFECT STUDY OF SI-SIO2 INTERFACE STATESRAO DK; MAJHI J.1982; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 9; PP. 1769-1773; BIBL. 16 REF.Article

INFLUENCE OF ACID-BASE EXPOSURE ON THE LONG-TERM PROPERTIES OF ION-CONTROLLED DIODESWEN CC; ZEMEL JN.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 69; NO 3; PP. 275-279; BIBL. 7 REF.Article

OPTICALLY ACTIVE INTERFACE STATES IN MOS STRUCTURESKAMIENIECKI E; NITECKI R; SWIATEK A et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 79-85; BIBL. 18 REF.Article

A TECHNIQUE FOR SUPPRESSING DARK CURRENT GENERATED BY INTERFACE STATE IN BURIED CHANNEL CCD IMAGERSSAKS NS.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 7; PP. 131-133; BIBL. 4 REF.Article

ION-ELECTRON (CONFIGURATIONAL) INTERFACE STATES IN MOS STRUCTURESKAMIENIECKI E.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 10; PP. 807-809; BIBL. 13 REF.Article

INTERFACE STATE DENSITY IN AN-N-GA AS SCHOTTKY DIODES.BORREGO JM; GUTMANN RJ; ASHOK S et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 2; PP. 125-132; BIBL. 14 REF.Article

SPACE CHARGE INFLUENCE ON RESISTIVITY MEASUREMENTS.KRAMER P; VAN RUYVEN LJ.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1011-1019; BIBL. 40 REF.Article

THE INFLUENCE OF THE INTERFACE STATES ON THE DYNAMIC TRANSCONDUCTANCE OF MIS-FETS.SCHRADER L.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 671-674; BIBL. 15 REF.Article

DETERMINATION DES PARAMETRES D'ETATS DE SURFACE PAR LA METHODE DE DECHARGE THERMOSTIMULEE D'UN CONDENSATEUR MDSLUSHNIKOV NA; ZHDAN AG.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 2; PP. 793-797; BIBL. 9 REF.Article

OBSERVATION BY AUGER ELECTRON SPECTROSCOPY OF THE EFFECT OF HYDROGEN AT A (111) SI-SIO2 INTERFACEJOST S; JOHNSON WC.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 446-447; BIBL. 7 REF.Article

ALKALI ADSORBATES AND SURFACE STATES IN (111) COVALENT FACESTEJEDOR C; FLORES F; FRANCO F et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 2; PP. L89-L92; BIBL. 2 P.Article

INFLUENCE OF AN IMPURITY PROFILE ON THE DETERMINATION OF INTERFACE STATESFELTIL H.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 10; PP. 1227-1230; BIBL. 15 REF.Article

INTERFACE STATES IN MNOS SYSTEMSPOPOVA LJ; VITANOV PK; ANTOV BZ et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 305-309; BIBL. 15 REF.Article

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