ELECTRON CURRENTS ACROSS METAL-SEMICONDUCTOR INTERFACESCHRISTOV SG.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 665-680; BIBL. 26 REF.Serial Issue

SUR LA STRUCTURE ENERGETIQUE DE LA LIMITE DE SEPARATION DU CONTACT METAL-GAASSEJRANYAN GB; TKHORIK YU A.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 355-359; BIBL. 22 REF.Serial Issue

DETERMINATION OF HAFNIUM-P-TYPE SILICON SCHOTTKY BARRIER HEIGHT.BEGUWALA M; CROWELL CR.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 6; PP. 2792-2794; BIBL. 12 REF.Article

THEORY OF TRANSIENT PHOTOCURRENTS IN TOTALLY DEPLETED SEMICONDUCTORSSEIBT W.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1017-1028; BIBL. 14 REF.Serial Issue

DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEMNARUSAWA T; KOMIYA S; KIRAKI A et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 389-390; BIBL. 10 REF.Serial Issue

PORES MACROSCOPIQUES DANS LES STRUCTURES A COUCHES METAL-SEMICONDUCTEURKUROV GA; ZHIL'KOV EH A; DUBODEL VM et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 1; PP. 72-75; BIBL. 2 REF.Serial Issue

THE EFFECT OF STRESS ON METAL SEMICONDUCTOR JUNCTIONSFONASH SJ.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 253-263; BIBL. 14 REF.Serial Issue

ELECTROMIGRATION FAILURE AT ALUMINIUM-SILICON CONTACTSPROKOP GS; JOSEPH RR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2595-2602; BIBL. 29 REF.Serial Issue

ELECTROREFLEXION DES BARRIERES DE SCHOTTKYBOBYLEV BA; KRAVCHENKO AF; LOBURETS YU V et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 9; PP. 1754-1759; BIBL. 15 REF.Serial Issue

FREQUENCY DEPENDENCE OF C AND DELTA V/DELTA (C^-2) OF SCHOTTKY BARRIERS CONTAINING DEEP IMPURITIESZOHTA Y.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 1029-1035; BIBL. 17 REF.Serial Issue

REVERSE CHARACTERISTICS OF AG-GAS SCHOTTKY BARRIERSVAN DEN DRIES JGAM; POST AG.1973; SOLID STATE COMMUNIC.; G.B.; DA. 1973; VOL. 12; NO 7; PP. 709-711; ABS. ALLEM.; BIBL. 14 REF.Serial Issue

STATISTICAL MODEL FOR ELECTROMIGRATION FAILURE AT ALUMINIUM CONTACTS AND TERMINALSPROKOP GS; LIANG G.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 474-498; BIBL. 1 P.Serial Issue

SUR LA DETERMINATION COMPLETE DES PARAMETRES PHYSIQUES DES DIODES A BARRIERE DE SCHOTTKYSTRIKHA VI.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 93-102; BIBL. 13 REF.Serial Issue

DIODE CHARACTERISTICS AND EDGE EFFECTS OF METAL-SEMICONDUCTOR DIODESTOVE PA; HYDER SA; SUSILA G et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 513-521; BIBL. 16 REF.Serial Issue

SUR L'INFLUENCE DES FORCES D'IMAGE ELECTROSTATIQUE ET DE L'EFFET TUNNEL SUR LA CARACTERISTIQUE COURANT-TENSION DU CONTACT METAL-SEMICONDUCTEUR A BARRIERE DE SCHOTTKYSTRIKHA VI; SHEKA DI.1973; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1973; VOL. 18; NO 4; PP. 592-597; ABS. ANGL.; BIBL. 6 REF.Serial Issue

TUNNELING IN N-TYPE-GAAS-PB CONTACTS UNDER PRESSUREGUETIN P; SCHREDER G.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 10; PP. 3979-3988; BIBL. 37 REF.Serial Issue

CONVERSION DE FREQUENCE BASEE SUR LA CARACTERISTIQUE REELLE COURANT-TENSION D'UN CONTACT METAL-SEMICONDUCTEURRADZIEVSKIJ IA; STRIKHA VI.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 8; PP. 73-80; BIBL. 8 REF.Serial Issue

SUR L'APPLICATION DES CONTACTS METAL-SEMICONDUCTEUR POUR L'ETUDE DES DEFAUTS DES COUCHES DIELECTRIQUES SUR LES SEMICONDUCTEURSBUZANEVA EV; DENISYUK VA; STRIKHA VI et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 3; PP. 239-243; BIBL. 4 REF.Serial Issue

A TRANSPORT EQUATION TREATMENT OF TUNNELLING IN SEMICONDUCTORSPARROTT JE.1973; J. PHYS. C; G.B.; DA. 1973; VOL. 6; NO 6; PP. 997-1006; BIBL. 6 REF.Serial Issue

QUANTUM YIELD OF METAL-SEMICONDUCTOR PHOTODIODESLI SS; LINDHOLM FA; WANG CT et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4123-4129; BIBL. 18 REF.Serial Issue

ENERGY DEPENDENCE OF HE⁺ AND H⁺ CHANNELING IN SI OVERLAID WITH AU FILMSLUGUJJO E; MAYER JW.1973; PHYS. REV. B; U.S.A.; DA. 1973; VOL. 7; NO 5; PP. 1782-1791; BIBL. 21 REF.Serial Issue

LARGE BARRIER CU-CDS CONTACTSMCCARTHY SJ; YEE SS.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 115-116; H.T. 1; BIBL. 7 REF.Serial Issue

OHMIC CONTACTS ON N⁺-AND P⁺-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

PROPRIETES ELECTRIQUES DES JONCTIONS TUNNEL INDIUM-TELLURURE DE PLOMBKIEU VC; GRANGER R; FINCK C et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 491-500; ABS. ANGL.; BIBL. 19 REF.Serial Issue

SUR LE ROLE DES FORCES IMAGES DANS LA FORMATION D'UNE BARRIERE DE POTENTIEL AU CONTACT METAL-SEMICONDUCTEURTERESHCHENKO AK.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 12; PP. 85-89; BIBL. 13 REF.Serial Issue