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kw.\*:("INTERFACE OR ARSENIURE GALLIUM")

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TEMPERATURVERHALTEN VON AU-N-GAAS SCHOTTKYKONTAKTENENGEMANN J; NAUMANN J.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 8; PP. 899-905; ABS. ANGL. FR.; BIBL. 11 REF.Serial Issue

QUELQUES PROPRIETES ELECTRONIQUES DE GAAS P FORTEMENT DOPEABDURAKHMANOV KP; KOTOV BA; OKUNEVA NM et al.1972; FIZ. TVERD. TELA; S.S.S.R.; DA. 1972; VOL. 14; NO 9; PP. 2581-2584; BIBL. 14 REF.Serial Issue

SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS FOR DEEP LEVEL IMPURITY DETERMINATIONBLEICHER M; LANGE E.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 375-380; ABS. ALLEM.; BIBL. 10 REF.Serial Issue

PASSAGE DES ELECTRONS PAR EFFET TUNNEL AU TRAVERS D'UN CONTACT METAL-SEMICONDUCTEURSTEPANOV GV; KAUFMAN MS; STERNIN M YU et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 327-333; BIBL. 5 REF.Serial Issue

ELECTRIC-FIELD-INDUCED INTERFERENCE EFFECTS AT THE GROUND EXCITATION LEVEL IN GAASEVANGELISTI F; FROVA A; FISCHBACH JU et al.1972; PHYS. REV. LETTERS; U.S.A.; DA. 1972; VOL. 29; NO 15; PP. 1001-1004; BIBL. 13 REF.Serial Issue

METHODE DE DETERMINATION DES PARAMETRES DES CENTRES D'IMPURETE DANS UN SEMICONDUCTEUR D'APRES LA RELAXATION DU COURANT INVERSE D'UNE STRUCTURE A BARRIERE SUPERFICIELLE (GAAS)TSARENKOV BV; GOL'DBERG YU A; POSSE EA et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2392-2396; BIBL. 9 REF.Serial Issue

CONTACT NON REDRESSEUR SUR L'ARSENIURE DE GALLIUMKOMASHKO VA; MASLOVSKIJ FN; TUZ VF et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 61-63; BIBL. 9 REF.Serial Issue

REVERSE CURRENT CHARACTERISTICS OF SOME IMPERFECT SCHOTTKY BARRIERSLADBROOKE PH.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 743-749; BIBL. 21 REF.Serial Issue

IN-GAAS SCHOTTKY BARRIERSHANDU VK; TYAGI MS.1972; J. INSTIT. TELECOMMUNIC. ENGRS; INDIA; DA. 1972; VOL. 18; NO 11; PP. 527-531; BIBL. 15 REF.Serial Issue

TUNNELING IN N-TYPE-GAAS-PB CONTACTS UNDER PRESSUREGUETIN P; SCHREDER G.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 5; NO 10; PP. 3979-3988; BIBL. 37 REF.Serial Issue

PROPRIETES DE L'INTERFACE GAAS-SIO2 LORS DU DEPOT PYROLYTIQUE DU DIOXYDE DE SILICIUMGRITCHENKO VN; KRIKUNOVA OO; PASHINTSEV YU I et al.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 1; PP. 87-88; BIBL. 6 REF.Serial Issue

ON THE FREQUENCY DEPENDENCE OF GAAS SCHOTTKY BARRIER CAPACITANCESHESSE K; STRACK H.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 767-774; ABS. ALLEM.; BIBL. 10 REF.Serial Issue

ETUDE DE L'EFFET TUNNEL DANS LES CONTACTS METAL-SEMICONDUCTEUR SOUS PRESSION HYDROSTATIQUEGUETIN P.1972; AO-CNRS-7638; FR.; DA. 1972; PP. (66 P.); H.T. 19; BIBL. 2 P.; (THESE DOCT. SCI., SPEC. PHYS. SOLIDE; UNIV. PARIS-SUD; 1972)Thesis

ELECTRICAL CONTACTS TO ION CLEANED N-TYPE GALLIUM ARSENIDEWALKER GH; CONWAY EJ.1972; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1972; VOL. 8; NO 4; PP. 49-50; BIBL. 6 REF.Serial Issue

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