DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEMNARUSAWA T; KOMIYA S; KIRAKI A et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 389-390; BIBL. 10 REF.Serial Issue

ENERGY DEPENDENCE OF HE⁺ AND H⁺ CHANNELING IN SI OVERLAID WITH AU FILMSLUGUJJO E; MAYER JW.1973; PHYS. REV. B; U.S.A.; DA. 1973; VOL. 7; NO 5; PP. 1782-1791; BIBL. 21 REF.Serial Issue

QUANTUM YIELD OF METAL-SEMICONDUCTOR PHOTODIODESLI SS; LINDHOLM FA; WANG CT et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4123-4129; BIBL. 18 REF.Serial Issue

TRANSIENT SPACE CHARGE LIMITED CURRENTS IN LIGHT-PULSE EXCITED SILICONTOVE PA; ANDERSSON LG.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 961-971; H.T. 2; BIBL. 15 REF.Serial Issue

PASSAGE DES ELECTRONS PAR EFFET TUNNEL AU TRAVERS D'UN CONTACT METAL-SEMICONDUCTEURSTEPANOV GV; KAUFMAN MS; STERNIN M YU et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 327-333; BIBL. 5 REF.Serial Issue

FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATESHIRAKI A; LUGUJJO E; MAYER JW et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3643-3649; BIBL. 13 REF.Serial Issue

ELECTROMIGRATION FAILURE AT ALUMINIUM-SILICON CONTACTSPROKOP GS; JOSEPH RR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2595-2602; BIBL. 29 REF.Serial Issue

POSSIBILITE D'ACTIVATION DE PARTICULES MOBILES A LA SURFACE EXTERIEURE DU DIELECTRIQUE D'UN SYSTEME DIELECTRIQUE-SEMICONDUCTEURFEDOROVICH YU V; DUMISH LK.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2321-2324; BIBL. 9 REF.Serial Issue

Croissance et caractérisation de films ultra-minces d'oxydes de silicium formés sous bombardement électronique en surface du silicium (100)Sefsaf, Benafgoui; Carrière, B.1989, 110 p.Thesis

STUDY OF THE SI-SIO₂ INTERFACE STATE WITH THE NEGATIVE BIAS-HEAT TREATMENT APPROACHKOBAYASHI I; NAKAHARA M; ATSUMI M et al.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 2; PP. 249-250; BIBL. 4 REF.Serial Issue

BORON REDISTRIBUTION AT THE OXIDE-SILICON INTERFACE DURING DRIVE-IN IN OXIDISING ATMOSPHERESMASETTI G; SOLMI S; SONCINI G et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 226-228; BIBL. 8 REF.Serial Issue

NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO₂ INTERFACESSILVERSMITH DJ.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1589-1593; BIBL. 12 REF.Serial Issue

STATISTICAL MODEL FOR ELECTROMIGRATION FAILURE AT ALUMINIUM CONTACTS AND TERMINALSPROKOP GS; LIANG G.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 474-498; BIBL. 1 P.Serial Issue

SUR LES TRANSITIONS INTER-IMPURETES DANS LE SYSTEME SI-SIO₂ZUEV VA; LITOVCHENKO VG.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 8; PP. 68-73; BIBL. 10 REF.Serial Issue

CONTROL OF FIXED CHARGE AT SI-SIO₂ INTERFACE BY OXIDATION-REDUCTION TREATMENTSFOWKES FM; HESS DW.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 377-379; BIBL. 18 REF.Serial Issue

OHMIC CONTACTS ON N⁺-AND P⁺-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

ELECTRONIC PROPERTIES OF THE SI-SIO₂ INTERFACE AS A JUNCTION OF OXIDE GROWTH CONDITIONS (II)PAUTRAT JL; PFISTER JC.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 11; NO 2; PP. 669-675; BIBL. 13 REF.Serial Issue

LASER-SCANNING PHOTOEMISSION MEASUREMENTS OF THE SILICON-SILICON DIOXIDE INTERFACEWILLIAMS R; WOODS MH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4142-4147; BIBL. 20 REF.Serial Issue

APPLICATION DE LA METHODE D'EMISSION IONIQUE SECONDAIRE A L'ANALYSE DU SYSTEME SI-SIO₂LITOVCHENKO VG; MARCHENKO RI; ROMANOVA GF et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 20-27; BIBL. 16 REF.Serial Issue

SPECTRE D'ENERGIE DES ETATS DE SURFACE DU SYSTEME SI-SIO₂SEMUSHKINA NA; SEMUSHKIN GB.1973; FIZ. TVERD. TELA; S.S.S.R.; DA. 1973; VOL. 15; NO 1; PP. 3-9; BIBL. 18 REF.Serial Issue

STUDIO SPERIMENTALE SULLA DENSITA DI STATI SUPERFICIALI ALLA INTERFACCIA SIO₂-SI = ETUDE EXPERIMENTALE DE LA DENSITE DES ETATS SUPERFICIELS A L'INTERFACE SI-SIO₂GABILLI E; SEVERI M; SONCINI G et al.1973; METALLURG. ITAL.; ITAL.; DA. 1973; VOL. 28; NO 4; PP. 197-200; ABS. FR. ANGL. ALLEM.; BIBL. 16 REF.Serial Issue

ELECTRICAL PROPERTIES OF CDSE THIN FILMS COVERED BY DIELECTRIC LAYERS OF SI_XO_Y OR DY₂O₃SNEJDAR V; JERHOT J; BERKOVA D et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 691-696; ABS. ALLEM.; BIBL. 13 REF.Serial Issue

SERIES EQUIVALENT CIRCUIT REPRESENTATION OF SIO₂-SI INTERFACE AND OXIDE TRAP STATESEATON DH; SAH CT.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 841-846; BIBL. 12 REF.Serial Issue

CONDUCTANCE ASSOCIATED WITH INTERFACE STATES IN MOS TUNNEL STRUCTURESCARD HC; RHODERICK EH.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 993-998; ABS. FR. ALLEM.; BIBL. 7 REF.Serial Issue

PROPRIETES ELECTROPHYSIQUES DE STRUCTURES ELECTROLYTETYAGAJ VA; PETROVA NA; SHIRSHOV YU M et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 80-88; H.T. 2; BIBL. 14 REF.Serial Issue