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DIFFUSE INTERFACE IN SI (SUBSTRATE)-AU (EVAPORATED FILM) SYSTEMNARUSAWA T; KOMIYA S; KIRAKI A et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 389-390; BIBL. 10 REF.Serial Issue

ENERGY DEPENDENCE OF HE+ AND H+ CHANNELING IN SI OVERLAID WITH AU FILMSLUGUJJO E; MAYER JW.1973; PHYS. REV. B; U.S.A.; DA. 1973; VOL. 7; NO 5; PP. 1782-1791; BIBL. 21 REF.Serial Issue

QUANTUM YIELD OF METAL-SEMICONDUCTOR PHOTODIODESLI SS; LINDHOLM FA; WANG CT et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4123-4129; BIBL. 18 REF.Serial Issue

TRANSIENT SPACE CHARGE LIMITED CURRENTS IN LIGHT-PULSE EXCITED SILICONTOVE PA; ANDERSSON LG.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 9; PP. 961-971; H.T. 2; BIBL. 15 REF.Serial Issue

CONTACT POTENTIALS AND BARRIER HEIGHTS IN GOLD-SILICON AND ALUMINUM-SILICON CONTACTSAHMAD K.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 11; PP. 4706-4713; BIBL. 31 REF.Serial Issue

PASSAGE DES ELECTRONS PAR EFFET TUNNEL AU TRAVERS D'UN CONTACT METAL-SEMICONDUCTEURSTEPANOV GV; KAUFMAN MS; STERNIN M YU et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 4; PP. 327-333; BIBL. 5 REF.Serial Issue

FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATESHIRAKI A; LUGUJJO E; MAYER JW et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3643-3649; BIBL. 13 REF.Serial Issue

EINFLUSS UND VERHALTEN VON GRENZFLAECHENZUSTAENDEN AN DER GRENZFLAECHE SILIZIUM-SPINELL UND SILIZIUM-SAPHIR = INFLUENCE ET COMPORTEMENT DES ETATS D'INTERFACES AUX INTERFACES SI-SPINELLE ET SI-SAPHIRRAETZEL C; TIHANYI J.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 307-311; ABS. ANGL.; BIBL. 6 REF.Serial Issue

ELECTROMIGRATION FAILURE AT ALUMINIUM-SILICON CONTACTSPROKOP GS; JOSEPH RR.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 6; PP. 2595-2602; BIBL. 29 REF.Serial Issue

EFFET D'UN BOMBARDEMENT IONIQUE SUR LE SYSTEME SI-SI3N4MUREL AV; SHITOVA EH V; ZORIN EI et al.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 1; PP. 80-83; BIBL. 9 REF.Serial Issue

POSSIBILITE D'ACTIVATION DE PARTICULES MOBILES A LA SURFACE EXTERIEURE DU DIELECTRIQUE D'UN SYSTEME DIELECTRIQUE-SEMICONDUCTEURFEDOROVICH YU V; DUMISH LK.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 12; PP. 2321-2324; BIBL. 9 REF.Serial Issue

Croissance et caractérisation de films ultra-minces d'oxydes de silicium formés sous bombardement électronique en surface du silicium (100)Sefsaf, Benafgoui; Carrière, B.1989, 110 p.Thesis

STUDY OF THE SI-SIO2 INTERFACE STATE WITH THE NEGATIVE BIAS-HEAT TREATMENT APPROACHKOBAYASHI I; NAKAHARA M; ATSUMI M et al.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 2; PP. 249-250; BIBL. 4 REF.Serial Issue

BORON REDISTRIBUTION AT THE OXIDE-SILICON INTERFACE DURING DRIVE-IN IN OXIDISING ATMOSPHERESMASETTI G; SOLMI S; SONCINI G et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 226-228; BIBL. 8 REF.Serial Issue

NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO2 INTERFACESSILVERSMITH DJ.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 11; PP. 1589-1593; BIBL. 12 REF.Serial Issue

STATISTICAL MODEL FOR ELECTROMIGRATION FAILURE AT ALUMINIUM CONTACTS AND TERMINALSPROKOP GS; LIANG G.1972; J. ELECTRON. MATER.; U.S.A.; DA. 1972; VOL. 1; NO 4; PP. 474-498; BIBL. 1 P.Serial Issue

SUR LES TRANSITIONS INTER-IMPURETES DANS LE SYSTEME SI-SIO2ZUEV VA; LITOVCHENKO VG.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 8; PP. 68-73; BIBL. 10 REF.Serial Issue

MODELE A 3 COUCHES POUR DES STRUCTURES SEMICONDUCTEUR-DIELECTRIQUELITOVCHENKO VG.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 12; PP. 3-12; BIBL. 23 REF.Serial Issue

CAPACITIVE EFFECTS OF AU AND CU IMPURITY LEVELS IN PT-N TYPE SI SCHOTTKY BARRIERSROBERTS GI; CROWELL CR.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 1; PP. 29-38; BIBL. 18 REF.Serial Issue

(EFFET DES TRAITEMENTS A BASSES TEMPERATURES SUR LES PROPRIETES ELECTRIQUES ET DE RECOMBINAISON DU SYSTEME SI-SIO2GORBAN AP; LITOVCHENKO VG; PEJKOV P KH et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 7-22; BIBL. 18 REF.Serial Issue

CONTROL OF FIXED CHARGE AT SI-SIO2 INTERFACE BY OXIDATION-REDUCTION TREATMENTSFOWKES FM; HESS DW.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 8; PP. 377-379; BIBL. 18 REF.Serial Issue

OHMIC CONTACTS ON N+-AND P+-SI BY ION IMPLANTATIONFEUERSTEIN A; KALBITZER S.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 1; PP. 19-20; BIBL. 1 REF.Serial Issue

ELECTRONIC PROPERTIES OF THE SI-SIO2 INTERFACE AS A JUNCTION OF OXIDE GROWTH CONDITIONS (II)PAUTRAT JL; PFISTER JC.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 11; NO 2; PP. 669-675; BIBL. 13 REF.Serial Issue

LASER-SCANNING PHOTOEMISSION MEASUREMENTS OF THE SILICON-SILICON DIOXIDE INTERFACEWILLIAMS R; WOODS MH.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 10; PP. 4142-4147; BIBL. 20 REF.Serial Issue

APPLICATION DE LA METHODE D'EMISSION IONIQUE SECONDAIRE A L'ANALYSE DU SYSTEME SI-SIO2LITOVCHENKO VG; MARCHENKO RI; ROMANOVA GF et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 11; PP. 20-27; BIBL. 16 REF.Serial Issue

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