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Results 1 to 25 of 38

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A DESIGN TECHNIQUE FOR SPECIFIC REVERSE BIAS CHARACTERISTICS OF A P-I-N DIODE.RATNAKUMAR KN; KAKATI D.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. K13-K16; BIBL. 4 REF.Article

THYRISTORSCHUTZ MIT HALBLEITERN-WIRTSCHAFTLICH UND SICHER. = PROTECTION ECONOMIQUE ET SURE DE THYRISTORS PAR SEMI-CONDUCTEURSWETZEL P.1977; B.B.C. NACHR.; DTSCH.; DA. 1977; VOL. 59; NO 3-4; PP. 152-158; BIBL. 3 REF.Article

IMPROVED Y-BRIDGE FOR REVERSE-BIASED DIODE MEASUREMENTS.SYNEK S; VASINA P.1976; ACTA PHYS. SLOV.; TCHECOSL.; DA. 1976; VOL. 26; NO 4; PP. 232-238; ABS. RUSSE; BIBL. 4 REF.Article

SWITCHING PHENOMENA IN REVERSE-BIASED GOLD-DIFFUSED SILICON P+-I - N+ DIODESSUPADECH S; HENG T.1979; PROC. I.E.E.E.; USA; DA. 1979; VOL. 67; NO 4; PP. 692-693; BIBL. 2 REF.Article

ETUDE ANALYTIQUE D'UNE DIODE A JONCTION ABRUPTE EN POLARISATION INVERSEDESTINE J.1979; REV. E; BEL; DA. 1979; VOL. 9; NO 7; PP. 137-146; BIBL. 19 REF.Serial Issue

EFFET DE COMMUTATION DANS DES STRUCTURES PI -NU -N A BASE DE GAAS (FE) EN POLARISATION INVERSEGAMAN VI; DIAMANT VM; FUKS GM et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 12; PP. 2302-2307; BIBL. 9 REF.Article

INDUCED PERMANENT NEGATIVE RESISTANCES IN REVERSE-BIASED P-N JUNCTIONSPOOKAIYAUDOM S.1978; INTERNATIONAL. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 3; PP. 329-332; BIBL. 2 REF.Article

OPTIMISATION EXPERIMENTALE DE LA TENUE EN ENERGIE INVERSE SUR CHARGE INDUCTIVE DES TRANSISTORS DE PUISSANCEPEYRE LAVIGNE ANDRE; QUOIRIN JEAN BAPTISTE.1978; ; FRA; DA. 1978; DGRST/77 7 1013; 57 P.; 30 CM; BIBL. 3 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

REVERSE BIAS LIFE TEST STABILITY OF TANTALUM-TITANIUM ANODIC OXIDE THIN FILM CAPACITORS.PETERS FG; SCHWARTZ N.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 6; PP. 949-951; BIBL. 14 REF.Article

AN ALGORITHM FOR TWO-DIMENSIONAL SIMULATION OF REVERSE-BIASED BEVELED P-N JUNCTIONSKUMAR R; CHAMBERLAIN SG; ROULSTON DJ et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 309-311; BIBL. 8 REF.Article

MODEL OF 1/F NOISE IN ION-IMPLANTED RESISTORS AS A FUNCTION OF THE RESISTANCE, DETERMINED BY A REVERSE BIAS VOLTAGEBECK HGE.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 5; PP. 475-478; BIBL. 12 REF.Article

P-I-N DIODE REVERSE-BIAS SWITCHING VIA INDUCTIVE DISCHARGINGGEORGOPOULOS CJ; MAKIOS V.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 23; PP. 723-725; BIBL. 4 REF.Article

1/F NOISE MEASUREMENTS IN ION-IMPLANTED SILICON RESISTORS AS A FUNCTION OF THE SUBSTRATE REVERSE BIAS VOLTAGE.BECK HGE.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 951-954; BIBL. 3 REF.Article

MOS-STRUKTUREN MIT SPERRSEITIG VORGESPANNTEM EXTERNEM PN - UEBERGANG BEI LINEARER GATESPANNUNGSANSTEUERUNG. II. BESTIMMUNG VON NST UND SIGMA = STRUCTURES MOS COMPORTANT UNE JONCTION PN EXTERNE POLARISEE DANS LE SENS DU BLOCAGE, UNE TENSION LINEAIRE DE COMMANDE ETANT APPLIQUEE A LA GRILLE. II. DETERMINATION DE NST ET SIGMAKADEN G; REIMER H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 719-729; ABS. ENG; BIBL. 19 REF.Article

EFFECT OF REVERSE SUBSTRATE BIAS ON THE MINIGAP IN SI INVERSION LAYERSCOLE T; LAKHANI AA; STILES PJ et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 127-132; BIBL. 12 REF.Article

LES DIODES A CAPACITE VARIABLERATEAU R.1980; ELECTRON. APPL.; FRA; DA. 1980; NO 13; PP. 27-33Article

ELECTROLUMINESCENCE IN REVERSE-BIASED ZNS:MN SCHOTTKY DIODESGORDON NT; RYALL MD; ALLEN JW et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 9; PP. 691-692; BIBL. 8 REF.Article

MECANISME DU SECOND CLAQUAGE A LA SURFACE DES JONCTIONS P-N HAUTE TENSION AU SILICIUM BLOQUEESATAEV BM; GREKHOV IV; MAGOMEDOV MA et al.1979; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1979; VOL. 49; NO 8; PP. 1768-1770; BIBL. 4 REF.Article

A STOCHASTIC MODEL FOR MICROPLASMA NOISE.ELLOUZE N; HOFFMANN JC; LACAZE B et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 297-300; BIBL. 10 REF.Article

DETERMINATION OF THE DRIFT MOBILITY IN HIGH-CONDUCTIVITY AMORPHOUS SILICONCRANDALL RS.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 3; PART. 1; PP. 1387-1391; BIBL. 13 REF.Article

MEASUREMENT OF LIFETIME OF PHOTOINJECTED CARRIERS IN SOLAR CELLS BY REVERSE VOLTAGE PULSE RESPONSEDHARIWAL SR.1980; I.E.E. PROC. I; GBR; DA. 1980; VOL. 127; NO 1; PP. 20-24; BIBL. 10 REF.Article

ANALYSIS OF A JUNCTION TERMINATION STRUCTURE FOR IDEAL BREAKDOWN VOLTAGE IN P-N JUNCTION DEVICESTANAKA T; MOCHIZUKI Y; OKAMURA M et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 261-265; BIBL. 12 REF.Article

EFFECT OF THE REVERSE BIANS BETWEEN CHANNEL AND SUBSTRATE ON THE EFFECTIVE MOBILITY OF ELECTRONS IN A GE I.G.F.E.T.KVON ZEDON; NEIZVESTNY IG; OVSUYK VN et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 20; PP. 624-626; BIBL. 6 REF.Article

EINSATZ VON NEUTRONENDOTIERTEN SILICIUMDIODEN IN GLEICHRICHTREN VON BAHNUNTERWERKEN. = L'EMPLOI DE DIODES AU SILICIUM DOPEES PAR IRRADIATION NEUTRONIQUE DANS LES REDRESSEURS DES POSTES DE TRACTIONLEHMANN G; RAUSCH D; ZELLERHOFF HG et al.1977; ELEKTR. BAHNEN; DTSCH.; DA. 1977; VOL. 48; NO 8; PP. 195-197; ABS. ANGL. FR.; BIBL. 2 REF.Article

FAILURE MECHANISMS IN BEAM LEAD SEMICONDUCTORS.BROWN UC; SIM JR.1977; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1977; VOL. 13; NO 3; PP. 225-229; BIBL. 5 REF.Article

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