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EXPLORATION DES BASSES COUCHES DE L'ATMOSPHERE AU MOYEN D'UN SODARCAPUT C; GAUTHIER D; HAULET R et al.1978; COMMISSAR. ENERG. ATOM., BULL. INFORM. SCI. TECH.; FRA; DA. 1978 PUBL. 1979; NO 230-231; PP. 77-79; ABS. ENGArticle

NOISE IN INVERSION LAYERS NEAR THE METAL-INSULATOR TRANSITIONADKINS CJ; KOCH RH.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 8; PP. 1829-1839; BIBL. 24 REF.Article

METEOROLOGICAL UTILISATION OF HORIZONTAL MICROWAVE PROPAGATION MEASUREMENTSCAPORALONI M; AMBROSINI R; TOMASSETTI G et al.1981; CHEMOSPHERE; ISSN 0366-7111; GBR; DA. 1981; VOL. 10; NO 5; PP. 461-467; BIBL. 4 REF.Article

THE INFLUENCE OF HELICOPTER FLIGHTS ON SURFACE (1.5 M) AIR TEMPERATURES UNDER INVERSION CONDITIONSHEINE RW; WRATT DS.1980; N.Z.J. SCI.; ISSN 0028-8365; NZL; DA. 1980 PUBL. 1981; VOL. 23; NO 4; PP. 353-359; BIBL. 11 REF.Article

INTERVALLEY TRANSITIONS IN INVERSION LAYERS.DOHLER GH.1976; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1976; VOL. 13; NO 4; PP. 903-907; BIBL. 12 REF.; (PHYS. COMPD. SEMICOND. INTERFACES. ANNU. CONF. 3. PROC.; SAN DIEGO, CALIF.; 1976)Conference Paper

A QUANTUM MODEL OF INVERSION LAYERS IN DOPED SEMICONDUCTOR SURFACES.GEORGIEV VK.1977; BULG. J. PHYS.; BULG.; DA. 1977; VOL. 4; NO 2; PP. 146-156; ABS. RUSSE; BIBL. 5 REF.Article

APTITUDE DE L'ACDAR A MESURER EN CONTINU LES HAUTEURS D'INVERSION.VAN GYSEGEM A; HELLEMANS H.1977; IN: WORLD METEOROL. ORGAN. TECH. CONF. INSTRUM. METHODS OBS. (TECIMO); HAMBURG; 1977; GENEVA; WMO; DA. 1977; PP. 249-254Conference Paper

TEMPERATURE INVERSIONS NEAR 75 KM.SCHMIDLIN FJ.1976; GEOPHYS. RES. LETTERS; U.S.A.; DA. 1976; VOL. 3; NO 3; PP. 173-178; BIBL. 6 REF.Article

FREQUENCE ET INTENSITE DES INVERSIONS AU SOL DANS LE PRE-KHANGAIBERESNEVA IA.1980; TRUDY GLAVN. GEOFIZ. OBS. A. I. VOEJKOVA, LENINGRAD; SUN; DA. 1980; NO 426; PP. 140-146; BIBL. 6 REF.Article

PRUEFUNG KOMPLEXER ELEKTRONISCHER SCHALTUNGEN MIT MIKRORECHNER = CONTROLE, AU MOYEN D'UN MICRO-ORDINATEUR, DE MONTAGES ELECTRONIQUES COMPLEXESBOHME H.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 5; PP. 191-194; ABS. RUS/ENG; BIBL. 3 REF.Article

A LOW-LEVEL INVERSION OVER THE AMTEX AREA DURING A PERIOD OF RETURN FLOW.HENRY WK; THOMPSON AH.1977; MONTH. WEATHER REV.; U.S.A.; DA. 1977; VOL. 105; NO 9; PP. 1193-1198; BIBL. 8 REF.Article

INFLUENCE OF CHARGED IMPURITIES ON SI INVERSION-LAYER ELECTRONSVINTER B.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 26; NO 12; PP. 6808-6825; BIBL. 51 REF.Article

SUBBAND ENERGIES IN N-CHANNEL INVERSION LAYERS ON (111) GEVINTER B.1979; PHYS. REV., B; USA; DA. 1979; VOL. 20; NO 6; PP. 2395-2397; BIBL. 9 REF.Article

VELOCITY INVERSION AND THE SHALLOW SEISMIC REFRACTION METHODWHITELEY RJ; GREENHALGH SA.1979; GEOEXPLORATION; NLD; DA. 1979; VOL. 17; NO 2; PP. 125-141; BIBL. 2 P.Article

EVOLUTION OF THE PHOTOCURRENT IN A REGION WITH INVERSION LAYER OF THE PNP TRANSITORSTANCIU GA; POPESCU IM; STOICHITA CM et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 1; PP. K17-K19; H.T. 1; BIBL. 7 REF.Article

OSCILLATORY ELECTRONIC HEAT CAPACITY IN INVERSION LAYERS ON (100) ORIENTED P-TYPE SI IN A QUANTIZING MAGNETIC FIELDCHAKRAVARTI AN; CHOWDHURY AK; GHATAK KP et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 1; PP. K97-K101; BIBL. 12 REF.Article

SUBBAND STRUCTURE OF N-CHANNEL INVERSION LAYERS ON POLAR SEMICONDUCTORSKAWAMOTO GH; QUINN JJ; BLOSS WL et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 4; PP. 1875-1886; BIBL. 17 REF.Article

IMPURITY BANDS IN INVERSION LAYERSFOWLER AB; HARTSTEIN A.1980; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1980; VOL. 42; NO 6; PP. 949-959; BIBL. 19 REF.Article

EFFECTS OF UNIAXIAL STRESS ON THE CYCLOTRON RESONANCE IN INVERSION SI(100)STALLHOFER P; KOTTHAUS JP; ABSTREITER G et al.1979; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1979; VOL. 32; NO 8; PP. 655-658; BIBL. 16 REF.Article

LOW FIELD MAGNETOCONDUCTIVITY IN THIN CRYSTALSSOONPAA HH.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 31; NO 7; PP. 493-496; BIBL. 13 REF.Article

CARACTERISTIQUES PHOTOELECTRIQUES DE STRUCTURES AU SILICIUM DIELECTRIQUE-SEMICONDUCTEUR A CANAL INDUITGIL'MAN BI; GORBAN AP; ZAKS MB et al.1979; POLUPROVODN. TEKH. MIKROELEKTRON.; UKR; DA. 1979; NO 29; PP. 19-24; BIBL. 14 REF.Article

ONSET OF HEAVY INVERSION IN MOS DEVICES DOPED NONUNIFORMLY NEAR THE SURFACE.FELTL H.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 288-289; BIBL. 3 REF.Article

EFFET DES TRAITEMENTS PAR CHAMPS DANS LES MILIEUX ACTIFS SUR LA MOBILITE DES TROUS DANS LE CANAL D'INVERSIONVENKSTERN SA; KOZLOV SN.1977; MIKROELEKTRONIKA; S.S.S.R.; DA. 1977; VOL. 6; NO 4; PP. 354-358; BIBL. 11 REF.Article

SURFACE CYCLOTRON RESONANCE IN SI UNDER UNIAXIAL STRESS.STALLHOFER P; KOTTHAUS JP; KOCK JF et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 20; NO 5; PP. 519-522; BIBL. 16 REF.Article

DIFFUSION SUPERFICIELLE DANS UNE COUCHE D'INVERSION QUANTIQUEVAS'KO FT.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 10; PP. 2068-2071; BIBL. 10 REF.Article

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