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A DEVICE FOR SPATIAL, TEMPORAL AND CONTRAST RESOLUTION MEASUREMENT USING A VDU SCREENUMBACH FW.1983; DISPLAYS; ISSN 0141-9382; GBR; DA. 1983; VOL. 4; NO 1; PP. 25-29; BIBL. 4 REF.Article

DRIFT-DIFFUSION THEORY OF SYMMETRICAL DOUBLE-JUNCTION DIODESSCHMIDT PE; HENISCH HK.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1129-1133; BIBL. 14 REF.Article

A RE-EXTRAPOLATION TECHNIQUE IN NEWTON-SOR COMPUTER SIMULATION OF SEMICONDUCTOR DEVICESWANG CT.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1083-1087; BIBL. 12 REF.Article

FRAME REPETITION RATE FOR FLICKER-FREE VIEWING OF HIGHT VDU SCREENSBAUER D; BONACKER M; CAVONIUS CR et al.1983; DISPLAYS; ISSN 0141-9382; GBR; DA. 1983; VOL. 4; NO 1; PP. 31-33; BIBL. 9 REF.Article

PROPAGATION OF 1-MU M BUBBLES IN CONTIGUOUS DISK DEVICESJU K; HU HL; HIRKO RG et al.1981; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1981; VOL. 25; NO 4; PP. 295-302; BIBL. 15 REF.Article

THE EFFECT OF ION IMPLANTER DESIGN UPON IMPLANT UNIFORMITYWITTKOWER AB.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 9; PP. 77-81; BIBL. 11 REF.Article

SIMPLE AND ACCURATE REPRESENTATION OF IMPLANTATION PARAMETERS BY LOW ORDER POLYNOMALSSELBERHERR S; GUERRERO E.1981; SOLID STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 591-593; BIBL. 5 REF.Article

CALIBRATION OF ION IMPLANTATION SYSTEMSWITTKOWER AB.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 11; PP. 61-67; BIBL. 8 REF.Article

ACTIVATION AND PROCESS CHARACTERISTICS OF INFRA RED RAPID ISOTHERMAL AND FURNACE ANNEALING TECHNIQUESDOWNEY DF; RUSSO CJ; WHITE JT et al.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 9; PP. 87-93; BIBL. 16 REF.Article

ION IMPLANTATION TECHNOLOGY AND MACHINESWILSON RG.1980; ADV. ELECTRON. ELECTRON. PHYS., SUPPL.; USA; DA. 1980; NO 13; SUPPL.; PP. 45-71; BIBL. 2 P.Article

BORIMPLANTIERTE WIDERSTAENDE FUER PIEZORESISTIVE WANDLER = RESISTANCE IMPLANTEE PAR B POUR TRANSDUCTEURS PIEZORESISTIFSSCHUBERT D.1980; FEINGERAETETECHNIK; ISSN 0014-9683; DDR; DA. 1980; VOL. 29; NO 7; PP. 306-308; ABS. RUS/ENG/FRE; BIBL. 13 REF.Article

ION IMPLANTATION HARDENINGBULICHEV SI; ALEKHIN VP; KOMISSAROV AP et al.1980; METALLOFIZIKA; UKR; DA. 1980; VOL. 2; NO 4; PP. 108-114; ABS. ENG; BIBL. 7 REF.Article

HIGH CURRENT DOSIMETRY TECHNIQUESMCKENNA CM.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 44; NO 1-4; PP. 93-110; BIBL. 30 REF.Conference Paper

MICROALLOY LAYER FORMATION BY ION IMPLANTATION = FORMATION DE COUCHES MICROALLIEES PAR IMPLANTATION D'IONSPICRAUX ST; MYERS SM; FOLLSTAEDT DM et al.1979; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1979; VOL. 63; NO 1; PP. 1-2; BIBL. 8 REF.Conference Paper

ION-IMPLANTATION DISTRIBUTIONS IN NON-UNIFORM TARGETS: PROJECTED RANGEWINTERBON KB.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 1; PP. 31-38; BIBL. 12 REF.Article

A TWO-GUN ION BEAM SYSTEM FOR DYNAMIC RECOIL IMPLANTATIONFISCHER G; HILL AE; COLLIGON JS et al.1978; VACUUM; GBR; DA. 1978; VOL. 28; NO 6-7; PP. 277-281; BIBL. 11 REF.Article

CORROSION BEHAVIOUR OF METALS AFTER ION IMPLANTATION OR PULSED LASER IRRADIATION = COMPORTEMENT DES METAUX A LA CORROSION APRES IMPLANTATION D'IONS ET IRRADIATION PAR LASERMAZZOLDI P; LO RUSSO S; BONORA PL et al.1982; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1982; VOL. 63; NO 1-4; PP. 17-24; BIBL. 16 REF.Conference Paper

FORMATION OF SHALLOW PHOTODIODES BY IMPLANTATION OF BORON INTO MERCURY CADMIUM TELLURIDEPITCHER PG; HEMMENT PLF; DAVIS QV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1090-1092; BIBL. 9 REF.Article

PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORSDAEJE CHIN; KUMP MR; HEE GOOK LEE et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 2; PP. 336-340; BIBL. 18 REF.Article

GAAS HALL DEVICES PRODUCED BY LOCAL ION IMPLANTATIONPETTENPAUL E; HUBER J; WEIDLICH H et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 781-786; BIBL. 30 REF.Article

ION IMPLANTATION MASKING ABILITY DEGRADATION IN HIGH TEMPERATURE ANNEALED MO FILMNOZAKI T; OKABAYASHI H; HIGUCHI K et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 6; PP. 1121-1127; BIBL. 17 REF.Article

ACCELERATOR SYSTEMS FOR ION IMPLANTATION RESEARCHBANNENBERG JG.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 44; NO 1-4; PP. 3-10; BIBL. 14 REF.Conference Paper

EFFECTS OF DISLOCATIONS IN SILICON TRANSISTORS WITH IMPLANTED BASES.ASHBURN P; BULL C; NICHOLAS KH et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 9; PP. 731-740; BIBL. 29 REF.Article

CHANNELING EFFECT OF LOW ENERGY BORON IMPLANT IN (100) SILICONLIU TM; OLDHAM WG.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 3; PP. 59-62; BIBL. 11 REF.Article

GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMIINSULATING GAAS FOR DIRECT ION IMPLANTED FET TECHNOLOGYTHOMAS RN; HOBGOOD HM; ELDRIDGE GW et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 387-399; 12 P.; BIBL. 20 REF.Article

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